IRFP4127PBF

IRFP4127PbF HEXFET® Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply High Speed Power Switching  Hard Switched and High Frequency Circuits   VDSS 200V RDS(on) typ. 17m D G 21m max S ID 75A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant     S D G TO-247AC Base part number Package Type IRFP4127PbF TO-247AC G D S Gate Drain Source Standard Pack Form Quantity Tube 25 Orderable Part Number IRFP4127PbF Parameter Continuous Drain Current, VGS @ 10V Max. 75 Units ID @ TC = 25°C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 53 A IDM Pulsed Drain Current  300 PD @TC = 25°C Maximum Power Dissipation 341 W Linear Derating Factor 2.3 W/°C VGS dv/dt TJ TSTG Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) ± 20 57 V V/ns Mounting Torque, 6-32 or M3 Screw -55 to + 175   °C   300 10 lbf·in (1.1 N·m) Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy    mJ 244  Thermal Resistance   Parameter Junction-to-Case  Case-to-Sink, Flat Greased Surface Junction-to-Ambient  RJC RCS RJA 1 www.irf.com © 2015 International Rectifier Typ. ––– 0.24 ––– Submit Datasheet Feedback Max. 0.4 ––– 40 Units °C/W March 09, 2015 IRFP4127PbF   Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units 200 ––– ––– V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 17 21 VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 ––– ––– ––– ––– ––– 3.0 100 -100 ––– Drain-to-Source Breakdown Voltage V(BR)DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance IGSS RG V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 5mA m VGS = 10V, ID = 44A  V µA nA VDS = VGS, ID = 250µA VDS = 200 V, VGS = 0V VDS =200V,VGS = 0V,TJ =125°C VGS = 20V VGS = -20V  Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VDS = 50V, ID =44A ID = 44A VDS = 100V nC   VGS = 10V ID = 44A, VDS =0V, VGS = 10V VDD = 100V ID = 44A ns RG= 2.7 VGS = 10V gfs Qg Qgs Qgd Qsync td(on) tr Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time 45 ––– ––– ––– ––– ––– ––– ––– 100 30 31 69 17 18 ––– 150 ––– ––– ––– ––– ––– S td(off) Turn-Off Delay Time ––– 56 ––– tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– 22 5380 410 86 ––– ––– ––– ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 360 ––– Coss eff.(TR) Output Capacitance (Time Related) ––– 590 ––– Parameter Continuous Source Current (Body Diode)  Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 75 ––– ––– 300 VSD Diode Forward Voltage ––– ––– 1.3 trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– 136 139 458 688 8.3 ––– ––– ––– ––– ––– VGS = 0V VDS = 50V ƒ = 1.0MHz pF   VGS = 0V, VDS = 0V to 160V See Fig.11 VGS = 0V, VDS = 0V to 160V Diode Characteristics   IS ISM A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 44A,VGS = 0V  TJ = 25°C VDD = 100V TJ = 125°C IF = 44A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C   A TJ = 25°C  ns Notes: Repetitive rating; pulse width limited by max. junction temperature. Recommended max EAS limit, starting TJ = 25°C, L = 0.25mH, RG = 25, IAS = 44A, VGS =10V. ISD 4A, di/dt A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width 400µs; duty cycle  2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Ris measured at TJ approximately 90°C         2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 09, 2015 IRFP4127PbF   1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 BOTTOM 1 0.1  60µs PULSE WIDTH Tj = 25°C 4.5V 100 0.01 BOTTOM 10 4.5V 1  60µs PULSE WIDTH Tj = 175°C 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 3.5 VDS = 50V  60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current ) 10 Fig 2. Typical Output Characteristics 1000 100 T J = 175°C 10 T J = 25°C 1 0.1 3.0 4.0 5.0 6.0 7.0 ID = 44A VGS = 10V 3.0 2.5 2.0 1.5 1.0 0.5 8.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 8000 16 VGS, Gate-to-Source Voltage (V) ID= 44A Coss = Cds + Cgd Ciss 4000 2000 Coss 1 VDS= 40V 8 4 0 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com 12 VDS= 160V VDS= 100V 0 Crss 0 20 40 60 80 100 120 140 160 180 Fig 4. Normalized On-Resistance vs. Temperature VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd 6000 0 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP © 2015 International Rectifier 20 40 60 80 100 120 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback March 09, 2015 IRFP4127PbF   VDS = 50V  60µs PULSE WIDTH ID, Drain-to-Source Current (A) ID, Drain-to-Source Current  ) 1000 100 T J = 175°C 10 T J = 25°C 1 0.1 3.0 4.0 5.0 6.0 7.0 1 10msec 40 20 0 125 150 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 175 Id = 5mA 240 220 200 180 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) Fig 10. Drain-to–Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 8.0 EAS, Single Pulse Avalanche Energy (mJ) 1200 6.0 Energy (µJ) 100 260 T C , CaseTemperature (°C) 4.0 2.0 0.0 ID 7.7A 12.6A BOTTOM 44A TOP 1000 800 600 400 200 0 0 40 80 120 160 200 VDS, Drain-to-Source Voltage (V) Fig 11. Typical Coss Stored Energy 4 10 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage (V) ID , Drain Current (A) 60 100 DC 0.1 VDS, Drain-to-Source Voltage (V) 80 75 1msec 0.01 8.0 Fig 7. Typical Source-Drain Diode Forward Voltage 50 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 VGS, Gate-to-Source Voltage (V) 25 100µsec 100 www.irf.com © 2015 International Rectifier 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) Fig 12. Maximum Avalanche Energy vs. Drain Current Submit Datasheet Feedback March 09, 2015 IRFP4127PbF   Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 J 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 1 2 2 3 3 4 C 4 Ci= iRi Ci= iRi Ri (°C/W) I (sec) 0.02 0.000019 0.08333 0.000078 0.181667 0.001716 0.11333 0.008764 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  Tj = 150°C and Tstart = 25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 14. Typical Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 250 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 44A 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 09, 2015 IRFP4127PbF   50 ID = 1.0A ID = 1.0mA ID = 250µA 5.0 40 30 IRRM - (A) VGS(th) Gate threshold Voltage (V) 6.0 4.0 3.0 20 I F = 29A 2.0 10 1.0 0 -75 -50 -25 0 25 50 75 VR = 100V T J = 125°C T J = 25°C 100 200 300 400 500 600 700 800 900 1000 100 125 150 175 dif / dt - (A / µs) T J , Temperature ( °C ) Fig 17. Typical Recovery Current vs. dif/dt 60 3000 50 2500 40 2000 QRR - (nC) IRRM - (A) Fig 16. Threshold Voltage vs. Temperature 30 20 1500 1000 I F = 44A VR = 100V T J = 125°C 10 VR = 100V T J = 125°C 500 T J = 25°C T J = 25°C 0 I F = 29A 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) dif / dt - (A / µs) Fig 18. Typical Recovery Current vs. dif/dt Fig 19. Typical Stored Charge vs. dif/dt 3000 2500 QRR - (nC) 2000 1500 1000 I F = 44A VR = 100V T J = 125°C 500 T J = 25°C 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) Fig 20. Typical Stored Charge vs. dif/dt 6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 09, 2015 IRFP4127PbF   Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 24b. Gate Charge Waveform Submit Datasheet Feedback March 09, 2015 IRFP4127PbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) E Q A A E2/2 "A" A2 E2 2X D B L1 "A" L SEE VIEW"B" 2x b2 3x b Ø .010 BA c b4 e A1 2x LEAD TIP ØP Ø.010 B A -A- S D1 VIEW: "B" THERMAL PAD PLATING BASEMETAL E1 Ø.010 (c) B A VIEW: "A" - "A" (b, b2, b4) SECTION: C-C, D-D, E-E TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 09, 2015 IRFP4127PbF   Qualification Information†   Industrial Qualification Level   (per JEDEC JESD47F) †† Moisture Sensitivity Level TO-247AC N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 09, 2015 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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