IRG4BC20K

PD - 91600A IRG4BC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations VCES = 600V VCE(on) typ. = 2.27V G @VGE = 15V, IC = 9.0A E n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGBC20K and IRGBC20M devices TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 16 9.0 32 32 10 ±20 29 60 24 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.5 ––– 2.0 (0.07) 2.1 ––– 80 ––– Units °C/W g (oz) 1 4/24/2000 IRG4BC20K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.49 — V/°C VGE = 0V, IC = 1.0mA — 2.00 — IC = 6.0A VGE = 15V — 2.27 2.8 IC = 9.0A Collector-to-Emitter Saturation Voltage V — 3.01 — IC = 16A See Fig.2, 5 — 2.43 — IC = 9.0A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance U 2.9 4.3 — S VCE = 100 V, IC = 9.0A — — 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current — — 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 — — — — — — — — — — — — Typ. Max. Units Conditions 34 51 IC = 9.0A 4.9 7.4 nC VCC = 400V See Fig.8 14 21 VGE = 15V 28 — 27 — TJ = 25°C ns 150 220 IC = 9.0A, VCC = 480V 100 150 VGE = 15V, RG = 50Ω 0.15 — Energy losses include "tail" 0.25 — mJ See Fig. 9,10,14 0.40 0.6 — — µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 50Ω , VCPK < 500V 28 — TJ = 150°C, 29 — IC = 9.0A, VCC = 480V ns 190 — VGE = 15V, RG = 50Ω 190 — Energy losses include "tail" 0.68 — mJ See Fig. 11,14 0.07 — TJ = 25°C, VGE = 15V, RG = 50Ω 0.13 — mJ IC = 6.0A, VCC = 480V 0.20 — Energy losses include "tail" 7.5 — nH Measured 5mm from package 450 — VGE = 0V 61 — pF VCC = 30V See Fig. 7 14 — ƒ = 1.0MHz Details of note Q through U are on the last page 2 www.irf.com IRG4BC20K 20 F o r b o th : T ria n g u la r w a ve : D uty c yc le: 50% TJ = 125° C T sink = 90°C G ate drive as spec ified 16 I C la m p vo l ta g e : 8 0 % o f ra te d Load Current ( A ) P o w e r D is s ip a tio n = 1 3 W 12 S q u a re wave : 6 0 % o f ra te d v o lta g e 8 I 4 Id e al d io de s A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) TJ = 25 o C  TJ = 150 o C  10 V = 15V  20µs PULSE WIDTH GE 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) 100 100 10 TJ = 150 o C  TJ = 25 oC  V = 50V  5µs PULSE WIDTH CC 1 5 10 15 20 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20K 20 5.0 V = 15V  80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE 15 10 5 0 25 50 75 100 125 150  I C = 18 A 4.0 3.0  I C = 9.0A 9A  I C = 4.5 A 2.0 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20  0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE  (THERMAL RESPONSE) t2  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20K C, Capacitance (pF) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 600 Cies  400 200 C oes 20 VGE , Gate-to-Emitter Voltage (V)  800  VCC = 400V I C = 9.0A 16 12 8 4 C res 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage  10 V CC = 480V V GE = 15V TJ = 25 ° C 9.0A I C = 9A 0.4 0.3 0.2 0 10 20 30 40 , GateResistance Resistance (Ohm) (Ω) RGRG, Gate Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 20 30 40 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 0.5 10 QG , Total Gate Charge (nC) 50  50Ω RG = Ohm VGE = 15V VCC = 480V  IC = 18 A 1  IC = 9.0A 9A  IC = 4.5 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20K  RG TJ VCC 4.0 VGE 100 = 50 Ohm Ω = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 5.0 3.0 2.0 1.0 VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 1 0.0 0 8 16 24 32 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6  40 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC20K L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X I C@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4BC20K Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. Case Outline and Dimensions — TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 4 3.78 (.149) 3.54 (.139) -A - 1.32 (.05 2) 1.22 (.04 8) 6 .4 7 (.255) 6 .1 0 (.240) 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1.15 (.0 45) M IN 1 2 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . LEAD 1234- 3 3X 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) -B - 4.69 (.185) 4.20 (.165) 3.96 (.1 60) 3.55 (.1 40) A S S IG N M E N T S G A TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.0 1 4 ) M B A M 2 .5 4 (.1 0 0 ) 3X 0.55 (.0 22) 0.46 (.0 18) 2.92 (.115 ) 2.64 (.104 ) 2X CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/