PD - 95861
IRG4BC40WS
IRG4BC40WL
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
VCES = 600V
VCE(on) typ. = 2.05V
G
@VGE = 15V, IC = 20A
E
n-channel
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
D2Pak
IRG4BC40WS
TO-262
IRG4BC40WL
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
600
40
20
160
160
± 20
160
160
65
-55 to + 150
V
A
V
mJ
W
300 (0.063 in. (1.6mm) from case )
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted steady-state)
Weight
Typ.
Max.
0.5
2.0 (0.07)
0.77
40
Units
°C/W
g (oz)
www.irf.com
1
4/19/04
IRG4BC40WS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 18
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage 0.44
V/°C VGE = 0V, IC = 1.0mA
2.05 2.5
IC = 20A
VGE = 15V
Collector-to-Emitter Saturation Voltage
2.36
IC = 40A
See Fig.2, 5
V
1.90
IC = 20A , TJ = 150°C
Gate Threshold Voltage
3.0
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
13
mV/°C VCE = VGE, IC = 250µA
Forward Transconductance
18
28
S
VCE = 100 V, IC =20A
250
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
2500
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
98
12
36
27
22
100
74
0.11
0.23
0.34
25
23
170
124
0.85
7.5
1900
140
35
Max. Units
Conditions
147
IC =20A
18
nC VCC = 400V
See Fig.8
54
VGE = 15V
TJ = 25°C
ns
150
IC = 20A, VCC = 480V
110
VGE = 15V, RG = 10Ω
Energy losses include "tail"
mJ See Fig. 9,10, 14
0.45
TJ = 150°C,
IC = 20A, VCC = 480V
ns
VGE = 15V, RG = 10Ω
Energy losses include "tail"
mJ See Fig. 10,11, 14
nH Measured 5mm from package
VGE = 0V
pF
VCC = 30V
See Fig. 7
= 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4BC40WS/L
50
For both:
40
Load Current ( A )
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 28W
Clamp voltage:
80% of rated
30
Square wave:
60% of rated
voltage
20
10
Ideal diodes
A
0
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
TJ = 25 °C
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
100
TJ = 150 °C
10
V GE = 15V
80µs PULSE WIDTH
1
1.0
2.0
3.0
4.0
5.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
TJ = 150 °C
10
TJ = 25 °C
V CC = 50V
5µs PULSE WIDTH
1
5
7
9
11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC40WS/L
3.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
50
40
30
20
10
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 40 A
2.5
IC = 20 A
2.0
IC = 10 A
1.5
1.0
-60 -40 -20
TC , Case Temperature (° C)
0
20 40
60
80 100 120 140 160
TJ , Junction Temperature (° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4BC40WS/L
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
3000
Cies
2000
Coes
1000
Cres
20
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
4000
0
1
10
16
12
8
4
0
100
0
VCE , Collector-to-Emitter Voltage (V)
20
40
60
80
100
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.0
10
V CC = 480V
V GE = 15V
0.9 TJ = 25 ° C
I C = 20A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC = 400V
I C = 20A
0.8
0.7
0.6
0.5
RG = 10
10Ohm
Ω
VGE = 15V
VCC = 480V
IC = 40 A
1
IC = 20 A
IC = 10 A
0.4
0.3
10
20
30
40
50
RG , Gate Resistance(Ω)
(Ohm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
60
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC40WS/L
RG
TJ
VCC
VGE
1000
Ω
=10
10Ohm
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
2.0
1.5
1.0
100
0.5
SAFE OPERATING AREA
0.0
5
15
25
35
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
VGE = 20V
T J = 125 oC
45
10
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
www.irf.com
IRG4BC40WS/L
L
D.U.T.
RL =
VC *
50V
0 - 480V
1000V
480V
4 X IC@25°C
480µF
960V
c
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
VC
50V
1000V
c
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
IC 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
www.irf.com
7
IRG4BC40WS/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H
LOT CODE 8024
AS SEMBLED ON WW 02, 2000
IN T HE AS SEMBLY LINE "L"
Note: "P" in assembly line
pos ition indicates "Lead-Free"
OR
INT ERNAT IONAL
RECT IFIER
LOGO
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
AS SEMBLY
LOT CODE
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
8
PART NUMBER
F530S
PART NUMBER
F530S
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WEEK 02
A = AS SEMBLY SIT E CODE
www.irf.com
IRG4BC40WS/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLEC-
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN T HE AS S EMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INTERNATIONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INTERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
www.irf.com
PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S ITE CODE
9
IRG4BC40WS/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/04
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
工商网监
湘ICP备2023018690号
