IRG4BC40W

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) typ. = 2.05V G @VGE = 15V, IC = 20A E n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220AB Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 40 20 160 160 ± 20 160 160 65 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.5 ––– 2.0 (0.07) 0.77 ––– 80 ––– Units °C/W g (oz) 1 4/24/2000 IRG4BC40W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.44 — V/°C VGE = 0V, IC = 1.0mA — 2.05 2.5 IC = 20A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 2.36 — IC = 40A See Fig.2, 5 V — 1.90 — IC = 20A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — 13 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance U 18 28 — S VCE = 100 V, IC =20A — — 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 2500 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V V(BR)CES V(BR)ECS Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 98 12 36 27 22 100 74 0.11 0.23 0.34 25 23 170 124 0.85 7.5 1900 140 35 Max. Units Conditions 147 IC =20A 18 nC VCC = 400V See Fig.8 54 VGE = 15V — — TJ = 25°C ns 150 IC = 20A, VCC = 480V 110 VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 9,10, 14 0.45 — TJ = 150°C, — IC = 20A, VCC = 480V ns — VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 10,11, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC40W 50 For both: 40 Load Current ( A ) Tria n g u la r w a ve : D u ty cy c le : 5 0 % TJ = 12 5° C T s in k = 9 0 °C G at e d rive as sp ec ifie d P o w e r D is s ip a tio n = 2 8 W C la m p vo l ta g e : 8 0 % o f r a te d 30 S q u a re w ave : 6 0 % o f ra te d v o lt a g e 20 10 Id e a l d io de s A 0 0.1 1 10 100 1000 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 TJ = 25 ° C  100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 100 TJ = 150 °C  10 V = 15V  80µs PULSE WIDTH GE 1 1.0 2.0 3.0 4.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 5.0 TJ = 150 °C  TJ = 25 °C  10 V = 50V  5µs PULSE WIDTH CC 1 5 7 9 11 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC40W 50 3.0 V = 15V  80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE 40 30 20 10 0 25 50 75 100 125 150  IC = 40 A 2.5  IC = 20 A 2.0  IC = 10 A 1.5 1.0 -60 -40 -20 TC , Case Temperature ( °C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001  0.10 P DM 0.05 t1 0.02 0.01 t2   SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC40W C, Capacitance (pF) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 3000 Cies  2000 C oes 1000 Cres  20 VGE , Gate-to-Emitter Voltage (V)  4000 0 1 10 12 8 4 0 100 0 20 40 60 80 100 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage  10 V CC = 480V V GE = 15V 0.9 TJ = 25 °C I C = 20A Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 400V I C = 20A 16 VCE , Collector-to-Emitter Voltage (V) 1.0  0.8 0.7 0.6 0.5  Ω RG = 10 10Ohm VGE = 15V VCC = 480V  IC = 40 A  IC = 20 A 1  IC = 10 A 0.4 0.3 10 20 30 40 50 RG , Gate Resistance (Ω) (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC40W 1.5  RG TJ VCC VGE 1000 Ω =10 10Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 2.0 1.0 VGE = 20V T J = 125 oC 100 0.5 SAFE OPERATING AREA 0.0 5 15 25 35 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6  45 10 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC40W L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X I C@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4BC40W Case Outline and Dimensions — TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 4 3.78 (.149) 3.54 (.139) -A - 1.15 (.0 45) M IN 1 2 3 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 2 .5 4 (.1 0 0 ) 1.32 (.05 2) 1.22 (.04 8) 6 .4 7 (.255) 6 .1 0 (.240) 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) -B - 4.69 (.185) 4.20 (.165) 3.96 (.1 60) 3.55 (.1 40) 4.06 (.160) 3.55 (.140) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.0 1 4 ) M B A M 3X 0.55 (.0 22) 0.46 (.0 18) 2.92 (.115 ) 2.64 (.104 ) 2X IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/