IRGP4790-EPBF

IRGP4790PbF IRGP4790-EPbF   Insulated Gate Bipolar Transistor VCES = 650V   IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C   C   E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790PbF  TO‐247AC  E n-channel Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding G Gate G E IRGP4790‐EPbF  TO‐247AD  C Collector Features C E Emitter Benefits Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient High Efficiency in a Wide Range of Applications Lead-Free, RoHs compliant Environmentally friendly Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Base part number Package Type IRGP4790PbF IRGP4790-EPbF TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4790PbF IRGP4790-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 650 140 90 225 300 ±20 455 230 -40 to +175 V A  V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC RCS RJA 1 Parameter Thermal Resistance Junction-to-Case  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– Typ. ––– 0.24 40 Submit Datasheet Feedback Max. 0.33 ––– ––– Units °C/W August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 650 — Typ. — 0.65 — 1.7 — 2.1 Gate Threshold Voltage 5.5 — VGE(th) Threshold Voltage Temperature Coeff. — -20 VGE(th)/TJ gfe Forward Transconductance — 47 — 1.0 ICES Collector-to-Emitter Leakage Current — 1.0 — — IGES Gate-to-Emitter Leakage Current Switching Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   Min. — — — — — — — — — — — Typ. 140 50 60 2.5 2.2 4.7 50 70 200 60 3.9 — — — — — — — — — 2.8 6.7 50 70 240 70 4300 230 120 Max. — — 2.0 V IC = 75A, VGE = 15V, TJ = 25°C — IC = 75A, VGE = 15V, TJ = 175°C 7.4 V VCE = VGE, IC = 2.1mA — mV/°C VCE = VGE, IC = 2.1mA (25°C-150°C) — S VCE = 50V, IC = 75A, PW = 20µs 25 µA VGE = 0V, VCE = 650V — mA VGE = 0V, VCE = 650V, TJ = 175°C ±100 nA VGE = ±20V Max Units Conditions 210 IC = 75A 80 nC VGE = 15V VCC = 400V 90 3.4 3.0 mJ   IC = 75A, VCC = 400V, VGE=15V 6.4 RG = 10, L = 200µH, TJ = 25°C 70 Energy losses include tail & diode 90 ns  reverse recovery  225 80 — — — — — — — — — — FULL SQUARE 5.5  —  Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 5.0mA (25°C-175°C) —  mJ  ns IC = 75A, VCC = 400V, VGE=15V RG = 10, L = 200µH, TJ = 175°C Energy losses include tail & diode reverse recovery   VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 300A VCC = 520V, Vp ≤ 650V VGE = +20V to 0V TJ = 150°C,VCC = 400V, Vp ≤ 650V µs   VGE = +15V to 0V pF Notes:       VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   140 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 208.3W Load Current ( A ) 120 100 Square Wave: 80 VCC 60 I 40 Diode as specified 20 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 160 500 140 400 120 Ptot (W) IC (A) 100 80 60 300 200 40 100 20 0 25 50 75 100 125 150 0 175 25 TC (°C) 50 75 100 125 150 175 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 1000 100 10 100 IC (A) IC (A) 10µsec 100µsec 10 1msec 1 DC Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10000 VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3 www.irf.com © 2014 International Rectifier 10 100 1000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   300 300 VGE = 18V VGE = 18V VGE = 15V 250 VGE = 15V 250 VGE = 12V 200 VGE = 10V 200 VGE = 8.0V ICE (A) ICE (A) VGE = 12V VGE = 10V 150 VGE = 8.0V 150 100 100 50 50 0 0 0 2 4 6 8 10 0 2 4 6 8 10 V CE (V) V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 12 300 VGE = 18V VGE = 15V 250 10 ICE = 38A ICE = 75A VGE = 12V VGE = 10V 8 VGE = 8.0V V CE (V) ICE (A) 200 150 ICE = 150A 6 100 4 50 2 0 0 0 2 4 6 8 5 10 10 Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs Fig. 9 - Typical VCE vs. VGE TJ = -40°C 12 12 10 10 ICE = 38A ICE = 75A 8 ICE = 38A ICE = 75A 8 ICE = 150A V CE (V) V CE (V) 20 V GE (V) V CE (V) 6 ICE = 150A 6 4 4 2 2 0 0 5 10 15 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C 4 15 www.irf.com © 2014 International Rectifier 5 10 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   225 12 180 10 8 90 Energy (mJ) ICE (A) 135 TJ = 25°C TJ = 175°C 45 EON 6 4 EOFF 2 0 2 4 6 8 10 12 14 0 16 0 25 50 75 V GE (V) 100 125 150 IC (A) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V 1000 11 10 tdOFF 9 Energy (mJ) Swiching Time (ns) 8 tF 100 tdON 7 6 EON 5 4 tR EOFF 3 2 10 0 0 50 100 25 50 150 Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V 10000 24 400 Tsc 20 Swiching Time (ns) 100 Rg () IC (A) Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V 75 330 Isc 1000 Time (µs) tF tR 100 tdON 260 12 190 8 120 4 10 0 20 40 60 80 100 120 R G () Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V 5 16 www.irf.com © 2014 International Rectifier Current (A) tdOFF 50 8 10 12 14 16 18 VGE (V) Fig. 17 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   16 10000 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) Cies 1000 Coes 100 Cres VCES = 400V VCES = 300V 14 12 10 10 8 6 4 2 0 0 100 200 300 400 500 0 20 40 V CE (V) 60 80 100 120 140 160 Q G, Total Gate Charge (nC) Fig. 19 - Typical Gate Charge vs. VGE ICE = 75A Fig. 18 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 4 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 C Ri (°C/W) i (sec) 0.0125052 0.000036 0.0722526 0.000151 0.1389474 0.005683 0.1056000 0.029339 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   L L 80 V + VCC DUT 0 - DUT VCC Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC DUT DUT / DRIVER VCC Rg Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force 100K D1 4X DC 22K C sense VCC DUT G force DUT 0.0075µF E sense E force Fig.C.T.5 - Resistive Load Circuit 7 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   600 120 tf 120 600 tr 500 100 500 400 80 400 60 300 TEST CURRENT 100 80 40 60 90% ICE 40 200 ICE (A) 200 VCE (V) 300 ICE (A) VCE (V) 90% ICE 10% VCE 100 20 10% ICE 0 0 0 10% ICE -100 1 20 0 0 -20 0.5 -0.5 0 time(µs) -20 0.5 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 600 600 500 VCE 400 400 300 300 ICE 200 200 100 100 Ice (A) 500 Vce (V) 10% VCE Eon Loss Eoff Loss -100 -0.5 100 0 0 -100 -100 -5 0 5 10 time (µs) Fig. WF3 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   TO-247AD Package Outline (Dimensions are shown in millimeters (inches)) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF   Qualification Information† Industrial Qualification Level TO-247AC Moisture Sensitivity Level (per JEDEC JESD47F)†† N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 8/22/2014 Comments  Updated Temperature Coeff. of Breakdown Voltage from “0.11V/C” to “0.65 V/C” on page 2 . Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 22, 2014