IRSM005-800MH

IRSM005-800MH Half-Bridge IPM for Low Voltage Applications 80A, 40V Description The IRSM005-800MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where power density is of critical importance. Typical examples would be advanced motor drives, dc-to-ac and dcto-dc converters. Features • Package with low thermal resistance and minimal parasitics • Low on-resistance HEXFETs: 2.7 mΩ typ. • Undervoltage lockout on logic supply • Independent gate drive in phase with logic input • Gate drive supply range from 10V to 20V • Propagation delay matched to defined spec • 3.3V, 5V and 15V logic input compatible • RoHS compliant Internal Electrical Schematic Ordering Information 1 Orderable Part Number Package Type Form Quantity IRSM005800MH PQFN 7x8mm Tray 1300 IRSM005800MHTR PQFN 7x8mm Tape and Reel 2000 www.irf.com © 2014 International Rectifier March 19, 2014 IRSM005-800MH Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table. The thermal resistance rating is measured under board mounted and still air conditions. Symbol Description Min Max Unit VDS MOSFET Drain-to-Source Voltage --- 40 V Io Maximum DC current per MOSFET @ TC=25°C (Note1) --- 80 A Pd Maximum Power dissipation per MOSFET @ TC =100°C --- 13 W TJ (MOSFET & IC) Maximum Operating Junction Temperature --- 150 °C TS Storage Temperature Range -40 150 °C VGS Gate to Source voltage VB High side floating absolute supply voltage VS High side floating supply offset voltage VCC +/- 20 -0.3 225 VB - 20 VB + 0.3 Low Side fixed supply voltage -0.3 25 VLO Low side output voltage -0.3 VCC +0.3V VHO High side output voltage -0.3 VCC +0.3V VIN Logic input voltage LIN, HIN -0.3 VCC +0.3V V Note1: Calculated based on maximum junction temperature. Bond wires current limit is 49A Inverter Static Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. Symbol Description Min Typ Max Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 --- --- V HIN=LIN=0V, ID=250µA VGS(TH) Gate Threshold Voltage 2 --- 4 V ID=100µA RDS(ON) Drain-to-Source Voltage --- 2.7 5.0 --- 4.2 --IDSS ID=10A, TJ=25°C ID=10A, TJ=150°C + 20 Zero Gate Voltage Drain Current HIN=LIN=0V, V =40V µA --- --- 150 Gate to Source Forward Leakage --- --- 100 Gate to Source Reverse Leakage --- --- -100 RG Internal Gate Resistance --- 1.5 --- VSD Mosfet Diode Forward Voltage Drop --- 0.8 0.9 --- 0.55 IGSS mΩ Conditions nA + HIN=LIN=0V, V =40V, TJ=125°C VGS=20V VGS=-20V Ω V IF=10A IF=10A, TJ=150°C + RBSOA Reverse Bias Safe Operating Area FULL SQUARE, limited by TJmax Io @ TA=60°C RMS Phase Current, sinusoidal modulation, 5kHz --- 13.5 --- ARMS Io @ TA=60°C RMS Phase Current, sinusoidal modulation, 20kHz --- 6 --- ARMS EAS Single Pulse Avalanche Energy 9.2 --- --- mJ 2 www.irf.com © 2014 International Rectifier V = 40V, VCC=+15V to 0V V+=32V, TJ=125°C, MI=1, PF=0.8, typical board mount. See Figure 2. March 19, 2014 IRSM005-800MH Inverter Dynamic Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. gfs Forward Transconductance 159 --- --- QG S Total Gate Charge --- 65 98 QGS Gate to Source Charge --- 16 --- QGD Gate to Drain Charge --- 23 --- QSYNC Total Gate Charge Sync. (QG - QGD ) --- 42 --- TDON Mosfet Turn On Delay Time --- 11 --- TR Mosfet Rise Time --- 37 --- TDOFF Mosfet Turn Off Delay Time --- 33 --- TF Mosfet Fall Time --- 26 --- CISS Input Capacitance --- 3174 --- COSS Output Capacitance --- 479 --- CRSS Reverse Transfer Capacitance --- 332 --- TRR Reverse Recovery TIme --- 16 --- ns QRR Reverse Recovery Charge --- 5 --- nC IRRM Reverse Recovery Current --- 0.5 --- A nC ID =50A VDS = 10V ID =50A VDS = 20V VGS=10V ID =50A,VDS = 0V,VGS = 10V ns ID =30A VDD = 20V VGS=10V RG=2.7Ω pF F= 1.0MHz VDS = 25V VGS=0V IF =50A VR =34V dI/dt= 100A/us Recommended Operating Conditions Driver Function For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. Symbol Definition Min Typ Max Units VB High side floating supply voltage VS+10 VS+15 VS+20 V VS High side floating supply offset voltage Note 1 --- 40 V VCC Low side and logic fixed supply voltage 10 15 20 V VIN Logic input voltage LIN, HIN COM --- VCC V HIN High side PWM pulse width 1 --- --- µs Deadtime Suggested dead time between HIN and LIN 0.3 0.5 --- µs 3 www.irf.com © 2014 International Rectifier March 19, 2014 IRSM005-800MH Static Electrical Characteristics Driver Function VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. The VIN, and IIN parameters are referenced to COM Symbol Definition Min Typ Max VIH Positive going input threshold for LIN, HIN 2.5 --- --- VIL Negative going input threshold for LIN, HIN --- --- 0.8 VOH High Level Output Voltage --- 0.05 0.2 VOL Low Level Output Voltage --- 0.02 0.1 VCCUV+ VBSUV+ VCC/VBS supply undervoltage, Positive going threshold 8.0 8.9 9.8 VCCUVVBSUV- VCC/VBS supply undervoltage, Negative going threshold 7.4 8.2 9.0 VCCUVH VBSUH VCC/VBS supply undervoltage lock-out hysteresis --- 0.8 --- ILK Offset Supply Leakage Current --- --- 50 IQBS Quiescent VBS supply current --- 45 75 Units Test Conditions VCC=10 to 20V IO=2mA V VB=VS=200V VIN =0V or 5V µA IQCC Quiescent VCC supply current --- 250 500 IIN+ Input bias current VIN=5V for LIN, HIN --- 4 10 VIN = 5V IIN- Input bias current VIN=0V for LIN, HIN --- 0.5 1 VIN =0V IO+ IC high output short circuit current 200 290 --- VO= 0V, VIN = 5V, PW