IRSM808-105MH

IRSM808-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM808-105MH is a 10A, 500V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in an isolated package. This advanced IPM offers a combination of IR's low RDS(on) Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a small PQFN package. At only 8x9mm and featuring integrated bootstrap functionality, the compact footprint of this surface-mount package makes it suitable for applications that are space-constrained. IRSM808-105MH functions without a heat sink. Features • • • • • • • • • • Integrated gate drivers and bootstrap functionality Suitable for sinusoidal modulation applications Low RDS(on) Trench FREDFET Under-voltage lockout for both channels Matched propagation delay for all channels Optimized dV/dt for loss and EMI trade offs 3.3V input logic compatible Active high HIN and active low LIN Motor Power range 80-200W Isolation 1500VRMS min IRSM808-105MH • ROHS compliant Internal Electrical Schematic VB IRSM808-105MH V+ VCC HIN LIN Vs 600V Half Bridge driver with built in bootstrap DT V- COM Ordering Information 1 Orderable Part Number Package Type Form Quantity IRSM808-105MH PQFN 8x9mm Tray 1300 IRSM808-105MHTR PQFN 8x9mm Tape and Reel 2000 Submit Datasheet Feedback May 18, 2014 www.irf.com © 2014 International Rectifier IRSM808-105MH Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table. The thermal resistance rating is measured under board mounted and still air conditions. Symbol Description Min Max Unit BVDSS MOSFET Blocking Voltage --- 500 V IO Output DC Current per MOSFET @ TC=25°C --- 10 A Pd Power dissipation per MOSFET @ TC =100°C --- 55 W TJ (MOSFET & IC) Maximum Operating Junction Temperature --- 150 °C TL Lead temperature (soldering 30 seconds) --- 260 °C TS Storage Temperature Range -40 150 °C VB High side floating supply voltage -0.3 VS + 20 V VS High side floating supply offset voltage VB - 20 VB +0.3 V VCC Low Side fixed supply voltage -0.3 20 V VIN Logic input voltage LIN, HIN -0.3 VCC+0.3 V VISO Isolation voltage (1min) (Note2) --- 1500 VRMS Note1: Calculated based on maximum junction temperature. Bond wires current limit is 3.5A. Note2: Characterized, not tested at manufacturing Recommended Operating Conditions Symbol V + Description Positive DC Bus Input Voltage Min Typ Max Units --- --- 400 V (Note 3) --- 400 V VS1,2,3 High Side Floating Supply Offset Voltage VB1,2,3 High Side Floating Supply Voltage VS+12 --- VS+20 V VCC Low Side and Logic Supply Voltage 13.5 --- 16.5 V VIN Logic Input Voltage COM --- VCC V Fp PWM Carrier Frequency --- --- 20 kHz Conditions For proper operation the module should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. Note 3: Logic operational for Vs from COM-8V to COM+500V. Logic state held for Vs from COM-8V to COM-VBS. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Static Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. The VIN, and IIN parameters are referenced to COM Symbol Description Min Typ Max Units BVDSS Drain-to-Source Breakdown Voltage 500 --- --- V ILKH Leakage Current of High Side FET’s in Parallel --- 15 --- µA ILKL Leakage Current of Low Side FET’s in Parallel Plus Gate Drive IC --- 20 --- µA --- 0.58 0.8 RDS(ON) Drain to Source ON Resistance 1.60 --- VSD Diode Forward Voltage --- 0.85 1.0 V VHIN/LIN Logic “1” input voltage for HIN & “0” for LIN 2.2 --- --- V VHIN/LIN Logic “0” input voltage for HIN & “1” for LIN --- --- 0.8 V VCC and VBS Supply Under-Voltage, Positive Going Threshold 8 8.9 9.8 V VCCUV-, VBSUV- VCC and VBS supply Under-Voltage, Negative Going Threshold 7.4 8.2 9.0 V VCCUVH, VBSUVH VCC and VBS Supply Under-Voltage LockOut Hysteresis --- 0.7 --- V IQBS Quiescent VBS Supply Current VIN=0V --- 45 70 µA IQCC Quiescent VCC Supply Current VIN=0V --- 1100 3000 µA IHIN+ Input Bias Current VIN=4V --- 5 20 µA ILIN- Input Bias Current VIN=0V --- 1 2 µA --- 200 --- Ω Min Typ Max Units --- 216 --- mJ VCCUV+, VBSUV+ Internal Bootstrap Equivalent Resistor Value Note 4: Characterized, not tested at manufacturing RBR TJ=25°C, ILK=3mA TJ=25°C, VDS=500V TJ=25°C, VDS=500V TJ=25°C, VCC=10V, Id = 6A Ω --- Conditions TJ=150°C, VCC=10V, Id = 6A (Note 4) TJ=25°C, VCC=10V, Id = 6A TJ=25°C MOSFET Avalanche Characteristics Symbol Description EAS Single Pulse Avalanche Energy Conditions TJ=25°C, L=3mH, VDD=100V, IAS=12A, TO-220 package. Dynamic Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. Driver only timing unless otherwise specified. Symbol Description Min Typ Max Units TON Input to Output Propagation Turn-On Delay Time --- 0.8 1.3 µs TOFF Input to Output Propagation Turn-Off Delay Time --- 0.8 1.3 µs DT Built-in Deadtime 0.9 1.3 --- µs TFIL,IN Input Filter Time (HIN, LIN) --- 300 --- ns 3 www.irf.com © 2014 International Rectifier Conditions ID=1mA, V+=50V Gate Driver; VLIN=0 & VHIN=5V with no external deadtime Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Thermal and Mechanical Characteristics Symbol Description Min Typ Max Units Conditions Rth(J-B) Thermal resistance, junction to mounting pad, each MOSFET --- 0.9 --- °C/W Standard reflow-solder process Rth(J-A) Thermal resistance, junction to ambient, each MOSFET --- 40 --- °C/W Mounted on 13.2cm2 of two-layer FR4 with 36 vias Input-Output Logic Level Table V+ Ho HIN Gate Driver IC U/V/W Lo LIN HIN LIN U,V,W HI HI V+ LO LO 0 HI LO ** LO HI * * V+ if motor current is flowing into VS, 0 if current is flowing out of VS into the motor winding ** Anti Shoot-through protection active (both HO and LO are OFF) 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Figure 1 – MOS typical output characteristics at 25°C Figure 2 – MOS typical output characteristics at 25°C 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Figure 3 – MOS body diode typical characteristics at 25°C and 150°C Figure 4 – module top surface typical thermal impedance 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Figure 5 – Typical switching losses at 390V Figure 6 – typical delta temperature between case (no heat-sink) and ambient with 1oz FR4 vs. power dissipation in the module 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Figure 7 – typical delta temperature between case (no heat-sink) and ambient with 2oz FR4 vs. power dissipation in the module Figure 8 – Typical thermal resistance vs. power dissipation in the module (no heat sink) with 1oz FR4 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Figure 9 – Typical thermal resistance vs. power dissipation in the module (no heat sink) with 2oz FR4 Figure 10 – Typical thermal resistance vs. area per module (no heat sink) with two layers FR4 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Qualification† †† Industrial (per JEDEC JESD 47) Qualification Level ††† MSL3 (per IPC/JEDEC J-STD-020) Moisture Sensitivity Level Class 1C (per JEDEC standard ANSI/ESDA/JEDEC JS-001) Human Body Model ESD Class A (per EIA/JEDEC standard JESD22-A115) Machine Model RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. ††† Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. Module Pin-Out Description Pin 1, 4, 7, 32 2 3 Name COM VCC HIN 5 6 8, 9, 10 11 – 19 20 – 28 29 – 30 31 LIN DT VVS V+ VS VB Description Low Side Gate Drive Return 15V Gate Drive Supply Logic Input for High Side (Active High) Logic Input for Low Side (Active Low) Dead time Low Side Source Connection Phase Output DC Bus Phase Output (-ve Bootstrap Cap Connection) High Side Floating Supply (+ve Bootstrap Cap Connection) 7 6 5 4 3 2 1 8 31 9 30 32 10 29 11 28 12 27 13 26 14 25 15 24 16 23 17 18 19 20 21 22 Exposed pad (Pin 32) has to be connected to COM for better electrical performance 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Package Outline IRSM808-105MH (Bottom View), 1 of 2 Dimensions in mm 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Package Outline IRSM808-105MH (Bottom View), 2 of 2 Dimensions in mm 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Package Outline IRSM808-105MH (Top & Side View) Dimensions in mm 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Top Marking IRSM808-105MH 14 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Typical Application Connection IRS808-105MH VBUS HVIC XTAL0 UH UL VH XTAL1 SPD-REF AIN2 HVIC HVIC VCC VB VCC VB HIN HO VH HIN HO WH HIN HO LIN VS VL LIN VS WL LIN VS COM LO COM LO COM LO U VCC V VB W VL WH WL IRSM808-105MH IRSM808-105MH IRSM808-105MH GATEKILL IRMCK171 Power Supply VDD VDDCAP VSS VDD AIN1 . CS_U+ CS_V+ Figure 1: Typical Application Connection 1. Bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide a good decoupling between VCC-VSS abd VB-VS terminals, the capaciotrs shown connected at these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1uF, are recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR Design tip DT04-4 or application note AN-1044. 15 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH VDS ID ID VDS 90% ID 50% HIN /LIN 90% ID 50% VDS HIN /LIN 50% HIN /LIN HIN /LIN 50% VCE 10% ID 10% ID tf tr TON TOFF Figure 3a. Input to Output propagation turn-on delay time. Figure 3b. Input to Output propagation turn-off delay time. IF VDS HIN /LIN Irr trr Figure 3c. Diode Reverse Recovery 16 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014 IRSM808-105MH Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 17 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 18, 2014