PTFA092211ELV4XWSA1

PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092211EL Package H-33288-2 PTFA092211FL Package H-34288-2 Features Two-carrier WCDMA Performance 40 -20 35 -25 30 -30 25 -35 Efficiency 20 -40 15 -45 ACP 10 ACPR (dBc) Drain Efficiency (%) VDD = 30 V, IDQ = 1.50 A, ƒ = 940 MHz, 3GPP WCDMA signal, PAR = 6.5 dB, 5 MHz carrier spacing -50 40 41 42 43 44 45 46 47 48 49 Output Power, Avg. (dBm) • Broadband internal matching • Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion = –37 dBc • Typical CW performance, 940 MHz, 30 V - Output power at P–1dB = 250 W - Gain = 17.0 dB - Efficiency = 59% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power • Pb-free, RoHS-compliant and thermally-enhanced packages RF Characteristics Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1750 mA, P OUT = 50 W (AVG), ƒ1 = 937.5 MHz, ƒ2 = 942.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 17.0 18.0 — dB Drain Efficiency ηD 28.5 30 — % Intermodulation Distortion IMD — –34 –32 dBc All published data at TCASE = 25 °C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 02, 2009-05-27 PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1750 mA, POUT = 220 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 18.0 — dB Drain Efficiency ηD — 44 — % Intermodulation Distortion IMD — –29 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.04 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 30 V, IDQ = 1750 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 700 W 4.0 W/°C Above 25 °C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70 °C, 220 W CW) RθJC 0.25 °C/W Ordering Information Type and Version Package Type Package Description Shipping Marking PTFA092211EL V4 H-33288-2 Thermally-enhanced slotted flange, single-ended Tray PTFA092211EL PTFA092211FL V4 H-34288-2 Thermally-enhanced earless flange, single-ended Tray PTFA092211FL Data Sheet 2 of 10 Rev. 02, 2009-05-27 PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) CW Performance Gain & Efficiency vs. Output Power CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.75 A, ƒ = 940 MHz VDD = 30 V, IDQ = 1.75 A, ƒ = 940 MHz 19 17 30 16 20 15 10 Efficiency 14 40 45 50 50 40 17 30 Gain 16 20 15 10 14 0 35 Efficiency TCASE = 90°C 18 Gain (dB) 40 Drain Efficiency (%) 18 60 TCASE = 25°C 19 50 Gain Gain (dB) 20 60 0 35 55 Drain Efficiency (%) 20 40 45 50 55 Output Power (dBm) Output Power (dBm) Power Sweep, CW Two-tone Broadband Performance Gain, Efficiency & Return Loss vs. Frequency VDD = 30 V, ƒ = 940 MHz VDD = 30 V, IDQ = 1.75 A, POUT = 110 W Efficiency 35 30 -15 Return Loss 25 -20 -25 Gain 20 15 900 910 -10 920 930 940 950 960 Power Gain (dB) 40 19 -5 Return Loss (dB) Efficiency (%), Gain (dB) 45 IDQ = 1.6 A 17 IDQ = 1.2 A -30 16 -35 970 980 30 35 40 45 50 55 Output Power (dBm) Frequency (MHz) Data Sheet IDQ = 2.0 A 18 3 of 10 Rev. 02, 2009-05-27 PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Output Power Six-carrier GSM Performance VDD = 30 V, IDQ = 1.75 A, ƒ 1 = 939 MHz, ƒ2 = 940 MHz VDD = 30 V, IDQ = 1.6 A, ƒ = 940 MHz, P/AR = 7 dB Drain Efficiency (%) IMD (dBc) -30 3rd Order -40 -50 5th -60 -70 -20 IMD Low 50 40 -30 Efficiency 30 -35 20 -40 10 -45 Gain 7th -80 -25 IMD Up 0 40 44 48 52 56 IMD (dBc) , ACPR (dBc) 60 -20 -50 37 39 41 43 45 47 49 Output Power (dBm) Output Power, PEP (dBm) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 2.33 A Normalized Bias Voltage (V) 1.03 4.65 A 1.02 9.33 A 1.01 11.64 A 1.00 13.98 A 0.99 0.98 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (°C) Data Sheet 4 of 10 Rev. 02, 2009-05-27 PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Ω Frequency MHz R jX Z Load Ω R jX 1.530 -0.650 1.480 -0.110 920 1.520 -0.380 1.430 0.180 940 1.520 -0.140 1.390 0.470 960 1.520 0.090 1.360 0.750 980 1.540 0.330 1.360 1.020 Z Load G S RA T O 900 D Z Source 0. 1 900 MHz 0.5 0.4 0.3 0.2 980 MHz 0.1 0.0 Z Load W ARD LOA D T HS T O L E NG - W AV E LE NGT H S T OW A RD GEN E Z0 = 50 Ω Z Source VE 0. 1 Data Sheet 5 of 10 Rev. 02, 2009-05-27 PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Reference Circuit C14 R5 C4 C5 C2 R3 R1 R2 R6 R7 C7 C6 C6 QQ1 R4 C3 100 HFK 7JN C1 L1 C11 Q1 C15 C13 C12 C16 R8 C23 RF_IN C8 C25 RF_OUT C24 C9 C10 C19 C18 L2 100 HFK 7JN C17 C21 C22 C20 a092211 ef l - v4_cd _5 - 6- 09 Reference circuit block diagram for ƒ = 960 MHz Circuit Assembly Information DUT PCB PTFA092211EL or PTFA092211FL 0.76 mm [.030"] thick, εr = 3.48 LDMOS Transistor Rogers RO4350 1 oz. copper Microstrip Electrical Characteristics at 960 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 (taper) l11 (taper) l12 l13 0.068 λ, 52.0 W 0.041 λ, 38.0 Ω 0.040 λ, 38.0 Ω 0.056 λ, 7.8 Ω 0.061 λ, 7.8 Ω 0.208 λ, 78.3 Ω 0.200 λ, 60.1 Ω 0.102 λ, 8.4 Ω 0.044 λ, 8.4 Ω / 12.0 Ω 0.065 λ, 12.0 Ω / 37.7 Ω 0.022 λ, 37.0 Ω 0.035 λ, 52.0 Ω 12.78 x 1.60 7.57 x 2.54 7.34 x 2.54 9.65 x 17.83 10.59 x 17.83 40.64 x 0.74 38.10 x 1.24 17.65 x 16.48 7.82 x 16.48 / 11.0 11.43 x 11.00 / 2.64 4.04 x 2.64 6.55 x 1.60 0.503 0.298 0.289 0.380 0.417 1.600 1.500 0.695 0.308 0.450 0.159 0.258 x 0.063 x 0.100 x 0.100 x 0.702 x 0.702 x 0.029 x 0.049 x 0.649 x 0.649 / 0.433 x 0.433 / 0.104 x 0.104 x 0.063 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 02, 2009-05-27 PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Reference Circuit (cont.) C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 10 V R6 2.4K V C5 0.1µF C4 10µF 35V C6 20nF L1 VDD R7 2.4K V C7 33pF C11 33pF l6 R8 10 V C8 33pF J1 l1 l3 l4 C9 3.9pF C23 2.6pF l9 l5 C10 6.8pF C15 0.1µF C14 100µF 50V C16 10µF 50V l7 DUT l2 C13 10µF 50V C12 1µF l 10 l 11 C25 33pF l 12 l 13 J2 C24 2.6pF l8 L2 C17 33pF C18 1µF C19 10µF 50V C20 100µF 50V C21 0.1µF C22 10µF 50V Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF C4 Tantalum Capacitor, 10 µF, 35 V C5, C15, C21 Capacitor, 0.1 µF C12, C18 Capacitor, 1 µF C7, C8, C11, C17, C25 Ceramic Capacitor, 33 pF C9 Ceramic Capacitor, 3.9 pF C10 Ceramic Capacitor, 6.8 pF C16, C22 Tantalum Capacitor, 10 µF, 50 V C13, C19 Multilayer Ceramic Capacitor, 10 µF, 50 V C14, C20 Electrolitic Capacitor, 100 µF, 50 V C23, C24 Ceramic Capacitor, 2.6 pF C6 Capacitor, 20 nF L1, L2 Ferrite, 8.9 mm Q1 Transistor QQ1 Voltage Regulator R1 Chip Resistor, 1.2 k-ohms R2 Chip Resistor, 1.3 k-ohms R3 Chip Resistor, 2 k-ohms R4 Potentiometer, 2 k-ohms R5, R8 Chip Resistor, 10 ohms R6, R7 Chip Resistor, 5.1 k-ohms Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC Garrett Electronics Digi-Key Digi-Key ATC ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 445-1411-1-ND 100B 330 100B 3R9 100A 6R8 TPSE106K050R0400 445-3497-2-ND P5571-ND 100B 2R6 ATC200B 203 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND *Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 02, 2009-05-27 PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-2 C66065-A0003-C723-01-0027 H-33288-2.dwg Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating less than 0.25 micron [10 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 10 Rev. 02, 2009-05-27 PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-34288-2 C66065-A0003-C724-01-0027 H-34288-2.dwg Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating less than 0.25 micron [10 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 02, 2009-05-27 PTFA092211EL/FL V4 Confidential, Limited Internal Distribution Revision History: 2009-05-27 2009-04-17 Preliminary Data Sheet Previous Version: Page Subjects (major changes since last revision) 1, 2 3, 4 Update information Modify and update graphs 6, 7 5 Update circuit diagrams and information Update impedance data Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-05-27 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 02, 2009-05-27