PTFA211801EV5R250XTMA1

PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA211801E Package H-36260-2 Features Two-carrier WCDMA Drive-up • Broadband internal matching VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -25 30 Efficiency -35 25 20 IM3 -40 15 -45 10 ACPR -50 5 -55 Drain Efficiency (%) -30 IM3 (dBc), ACPR (dBc) • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion = –36 dBc - Adjacent channel power = –41 dBc • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 52% • Integrated ESD protection • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power 0 34 36 38 40 42 44 46 48 • Pb-free and RoHS-compliant Average Output Power (dBm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14.5 15.5 — dB Drain Efficiency hD 26 27.5 — % Intermodulation Distortion IMD — –36 –34 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution RF Characteristics (cont.) CW Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 150 W average, ƒ = 2170 MHz Characteristic Gain Compression Symbol Min Typ Max Unit Gcomp — 0.5 1.0 dB Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 15.5 — dB Drain Efficiency hD — 38.5 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RqJC 0.31 Data Sheet 2 of 9 Unit °C/W Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution Ordering Information Type and Version Package Outline Package Description Shipping PTFA211801E V5 H-36260-2 Thermally-enhanced slotted flange, single-ended Tray PTFA211801E V5 R250 H-36260-2 Thermally-enhanced slotted flange, single-ended Tape & Reel Typical Performance (data taken in a production test fixture) Two-carrier WCDMA at Various Biases Broadband Performance VDD = 28 V, IDQ = 1.2 A, PO UT = 45.0 dBm CW 30 -35 25 1.3 A 1.4 A -40 -45 1.2 A 1.1 A -50 -5 Efficiency -10 Return Loss 20 15 -15 -20 Gain 10 -25 5 -55 34 36 38 40 42 44 46 2070 48 -30 2090 2110 2130 2150 2170 2190 2210 Frequency (MHz) Output Power, Avg. (dBm) Data Sheet Input Return Loss (dB) -30 Gain (dB), Efficiency (%) 3rd Order IMD (dBc) VDD = 28 V, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, series show IDQ 3 of 9 Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution Typical Performance (cont.) Power Sweep, CW Conditions Power Sweep, CW Conditions VDD = 30 V, IDQ = 1.2 A, ƒ = 2170 MHz VDD = 28 V, IDQ = 1.2 A, ƒ = 2170 MHz 15 34 14 21 13 40 60 80 Gain 40 15 30 14 20 13 10 12 8 20 50 16 Gain (dB) Gain 0 0 0 100 120 140 160 180 20 40 60 Output Power (W) 80 100 120 140 160 180 Output Power (W) Two-tone Drive-up Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz, tone spacing = 1 MHz VDD = 28 V IDQ = 1.2 A, ƒ = 2140 MHz, PO UT = 51 dBm PEP -20 -20 -25 Intermodulation Distortion (dBc) Intermodulation Distortion (dBc) 60 Efficiency 17 47 Drain Efficiency (%) Gain (dB) 16 18 60 Efficiency TCA S E = 25°C TCA S E = 90°C 3rd Order -30 -35 -40 5th -45 7th -50 -55 0 5 10 15 20 25 30 35 -25 40 Efficiency -30 35 -35 IM5 -40 IM3 30 25 -45 20 -50 15 -55 10 IM7 -60 5 -65 0 38 40 Tone Spacing (MHz) Data Sheet 45 Drain Efficiency (%) 17 42 46 50 54 Output Power, PEP (dBm) 4 of 9 Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA Drive-up Voltage Sweep 10 -45 5 ACPR Up 0 44 46 -45 30 31 32 10 33 Supply Voltage (V) a211801ef Nornalized to 50 Ohms Z0 = 50 Ω D R --> RD G E NE RA T O jX 2070 7.2 –0.5 1.5 2.3 2110 7.8 –0.2 1.4 2.6 2140 8.4 –0.0 1.4 2.8 2170 9.1 0.0 1.4 3.0 2210 10.0 –0.2 1.3 3.4 Z Source 2210 MHz 2070 MHz 0.1 0. 2 5 of 9 Rev. 06, 2011-01-11 45 0. 05 0. 3 0. Data Sheet 0. 4 0.5 R 0.4 jX 0.3 R 0.2 MHz 2070 MHz 0 .0 2210 MHz E W AV