PTFC262808SVV1R250XTMA1

PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW • Broadband internal matching • Typical CW pulsed performance, 2620 MHz, 28 V - Output power at P1dB = 280 W - Efficiency = 52% - Gain = 18 dB • Typical 1-carrier WCDMA performance, 2655 MHz, 28 V - Output power at P1dB = 56 W avg. - Efficiency = 24% - Gain = 18.0 dB • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) • Low thermal resistance • RoHS-compliant • Capable of handling 10:1 VSWR at 28 V, 280 W (CW) ouput power 18 35 Gain 17 30 16 25 Efficiency 15 20 14 15 13 c262808sv-gr1 38 40 42 44 46 48 50 Drain Efficiency (%) 40 19 Gain (dB) PTFC262808SV Package H-37275G-6/2 with formed leads 10 52 Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon production test fixture) VDD = 28 V, IDQ = 1800 mA, POUT = 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 18.0 — dB Drain Efficiency ηD 22 24 — % ACPR — –33 –30 dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 02.1, 2013-08-02 PTFC262808SV DC Characteristics (single side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.45 A VGS — 2.65 — V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC 0.20 °C/W Junction Temperature Ordering Information Type and Version Order Code Package and Description Shipping PTFC 262808SV V1 R250 PTFC262808SVV1R250XTMA1 H-37275G-6/2, ceramic open-cavity, formed leads, Tape & Reel, 250 pcs earless Data Sheet 2 of 8 Rev. 02.1, 2013-08-02 PTFC262808SV Typical Performance (data taken in a reference design fixture) Pulsed CW Performance (gain and input return loss) Pulsed CW Performance VDD = 28 V, IDQ = 1.8 A 19 IRL 18 -10 -15 17 -20 -25 16 -30 Gain -35 Gain (dB) 20 60 19 50 18 17 30 Efficiency 20 15 c262808sv-gr7 c262808s v-gr5 44 46 48 50 52 54 Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW -20 -20 IMD (dBc), ACPR (dBc) 2620 MHz 2655 MHz 2690 MHz -25 -30 -35 -40 IMD Up IMD Low -45 40 42 44 46 48 50 40 IM3L IM3U ACPR Eff -25 -30 35 30 -35 25 -40 20 -45 15 -50 c262808sv-gr3 38 10 56 Output Power (dBm) Frequency (MHz) IMD (dBc) 2620 MHz 2655 MHz 2690 MHz 16 15 -40 2300 2400 2500 2600 2700 2800 2900 3000 52 c262808sv-gr2 38 40 42 44 46 48 50 10 52 Output Power (dBm) Output Power (dBm) Data Sheet 40 Gain Drain Efficiency (%) Power Gain (dB) -5 Input Return Loss (dB) 0 Efficiency (%) VDD = 28 V, IDQ = 650 mA 3 of 8 Rev. 02.1, 2013-08-02 PTFC262808SV Typical Performance (cont.) Pulsed CW Performance at selected supply voltages IDQ = 1800 mA, ƒ = 2690 MHz VDD = 32 V VDD = 28 V VDD = 24 V 20 60 50 18 40 Gain 17 30 16 Efficiency (%) Power Gain (dB) 19 20 Efficiency 15 10 c 262808sv-gr6 42 44 46 48 50 52 54 56 Output Power (dBm) Broadband Circuit Impedance Z Source  Frequency Z Load  Z Source MHz R jX R jX 2620 2.07 –2.45 0.69 –4.22 2655 1.98 –2.39 0.68 –4.19 2690 1.91 –2.33 0.66 –4.08 Data Sheet 4 of 8 G G D Z Load S D Rev. 02.1, 2013-08-02 PTFC262808SV Reference Circuit, tuned for 2620 – 2690 MHz DUT PTFC262808SV Test Fixture Part No. LTN/PTFC262808SV V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower) R802 C801 C803 RO4350, .020 R803 (60) R801 RO4350, .020 (60) C802 R107 S3 R108 R103 S2 C202 C206 C205 R804 R102 C207 R109 VDD + S1 C102 C103 PTFC262808SV C105 C101 RF_IN C107 C106 C104 C201 C212 C203 RF_OUT C204 C108 R104 C209 R101 VDD + C211 C210 C208 PTFC262808SV_OUT_01 PTFC262808SV_IN_1A c 28 2 8 08 s v _c d_ 6 - 28 - 13 Reference circuit assembly diagram (not to scale) Component Information Component Description Suggested Manufacturer P/N Input C101, C102, C107, C108 Chip capacitor, 18 pF ATC ATC800A180JW250X C103, C104 Capacitor, 10 µF Murata Electronics North America LLL31BC70G106MA01L C105 Chip capacitor, 0.4 pF ATC ATC100B0R4CW150X C106 Chip capacitor, 0.7 pF ATC ATC100B0R7CW150X C801, C802, C803 Chip capacitor, 1,000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R102 Resistor, 10 Ω Panasonic Electronic Components ERJ-3GEYJ100V Data Sheet 5 of 8 (table cont. next page) Rev. 02.1, 2013-08-02 PTFC262808SV Reference Circuit (cont.) Component Information (cont.) Component Description Suggested Manufacturer P/N R103, R104 Resistor, 10 Ω Panasonic Electronic Components ERJ-8GEYJ100V R107, R109 Resistor, 0.0 Ω Panasonic Electronic Components ERJ-8GEY0R00V R108 Resistor, 0.0 Ω Panasonic Electronic Components ERJ-3GEY0R00V R801 Resistor, 1 Ω Panasonic Electronic Components ERJ-8GEYJ1R0V R802 Resistor, 1k Ω Panasonic Electronic Components ERJ-8GEYJ102V R803 Resistor, 1.3k Ω Panasonic Electronic Components ERJ-3GEYJ132V R804 Resistor, 1.2k Ω Panasonic Electronic Components ERJ-3GEYJ122V S1 Potentiometer, 2k Ω Bourns Inc. 3224W-1-202E S2 Transistor Infineon Technologies BCP56-10 S3 Voltage regulator Fairchild Semiconductor LM7805 C201, C204 Chip capacitor, 0.2 pF ATC ATC100B0R2BW150X C202, C206, C207, C208, C209, C210 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C203, C212 Chip capacitor, 18 pF ATC ATC800A180JW250X C205, C211 Capacitor, 220 µF, 35 V Panasonic Electronic Components EEE-FP1V221AP Input (cont.) Output Pinout Diagram V2 V1 D1 Pin V1, V2 G1, G2 D1, D2 S D2 S G1 Data Sheet G2 Description VDD Gate Drain Source (flange) H-34275G-6-2_gw_pd_10-10-2012 6 of 8 Rev. 02.1, 2013-08-02 PTFC262808SV Package Outline Specifications Package H-37275G-6/2  >@ ;   >   @ 63+99  >@ ;'ƒ[ >@ ; >@ ;ƒ ; >@ ; >@ &/ 9 ' '  >@ * ;5  >5  @ “ >“@ &/ * &/ &/ ; >@ ; >@ ƒ“ƒ ;“ >“@ 63+''**   >   @ “ >“@  >@ ;   >  @ 9  >@ &/ ;“ >“@ &/ +*BJZBSRBB  >@ 6 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [0.005]. 4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – VDD. 5. Lead thickness: 0.13 +0.051/–0.025 [0.005 +0.002/–0.001]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower) Data Sheet 7 of 8 Rev. 02.1, 2013-08-02 PTFC262808SV V1 Revision History: Previous Version: Page all 1, 2, 6 2013-08-02 2013-07-24, Data Sheet; 2012-08-09, Advance Specification Subjects (major changes since last revision) Product released to production, information complete and current. Typos corrected. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2013-08-02 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 02.1, 2013-08-02