PTFB193408SVV1R250XTMA1

PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Two-carrier WCDMA 3GPP Drive-up • Wide video bandwidth 20 50 30 17 20 d e nd Efficiency 16 10 e 34 36 38 40 42 44 46 48 m 50 m o ec Efficiency (%) Gain (dB) 40 Gain 18 15 s e d n g i • Broadband internal matching, input and output VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, 3.84 MHz BW 19 PTFB193408SV Package H-34275G-6/2 52 0 w e n • Typical single-carrier WCDMA performance, 1990 MHz, 30 V - Output power = 100 W - Efficiency = 33% - Gain = 19.0 dB - PAR = 7.5 dB @ 0.01% CCDF - ACPR @ 5 MHz = –35 dBc r o f • Increased negative gate-source voltage range for improved performance in Doherty amplifiers • Capable of handling 10:1 VSWR at 30 V, 340 W (CW) ouput power • Integrated ESD protection • Excellent thermal stability Output Power (dBm) • RoHS-compliant r t no RF Characteristics Single-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 2.65 A, POUT = 80 W average, ƒ = 1990 MHz WCDMA signal: 3GPP, 3.84 MHz channel bandwidth, with 10 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 18 19 — dB Drain Efficiency hD 29 31 — % Adjacent Channel Power Ratio ACPR — –32 –30 dBc (table continued next page) All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 03, 2015-10-01 PTFB193408SV RF Characteristics (cont.) Two-carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, WCDMA signal: 3GPP, 3.84 MHz channel bandwidth, 8.0 dB peak/average @ 0.01% CCDF    Characteristic Symbol Min Typ Max Unit Gain Gps — 19.5 — dB Drain Efficiency η D — 29 — % Intermodulation Distortion IMD — –33 — dBc i s e gn Two-tone Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 265 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz Characteristic d Symbol Min Gain Gps Drain Efficiency η D Intermodulation Distortion DC Characteristics d e nd (both sides) Typ Max Unit — 19.5 — dB — 36 — % IMD — –30 — dBc Symbol Min Typ Max Unit r o f w e n Characteristic Conditions Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 30 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — Ω VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA e m m o ec On-State Resistance r t no Operating Gate Voltage Gate Leakage Current Maximum Ratings Parameter Symbol Value Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 300 W CW) RθJC Data Sheet 2 of 9 0.2 Unit °C/W Rev. 03, 2015-10-01 PTFB193408SV Ordering Information Type and Version Order Code Package and Description Shipping PTFB 193408SV V1 R250 PTFB193408SVV1R250XTMA1 H-34275G-6/2, ceramic open-cavity, formed leads, earless Tape & Reel, 250 pcs Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP Drive-up IMD (dBc) -30 IMD (dBc) / ACPR (dBc) IM3 Low IM3 Up -35 -40 -45 1990 MHz 1960 MHz 1930 MHz -50 -55 -60 34 36 38 40 42 44 46 48 50 Output Power (dBm) 52 d e nd e m -20 ew -25 -30 n r fo -35 -40 s e d 45 Efficiency 35 30 IMD Up 25 20 IMD Low -45 15 -50 34 36 10 ACPR -55 -60 40 38 40 42 44 46 48 50 5 52 Drain Efficiency (%) -15 -20 -25 n g i VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, 3.84 MHz BW VDD = 30 V, IDQ = 2.6 A, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, 3.84 MHz BW 0 Output Power (dBm) m o ec r t no Data Sheet 3 of 9 Rev. 03, 2015-10-01 PTFB193408SV Typical Performance (cont.) Single-carrier WCDMA 3GPP Broadband Performance Single-carrier WCDMA 3GPP Broadband Performance VDD = 30 V, IDQ = 2.6 A, POUT = 100 W, PAR = 10:1 40 -20 Efficiency 30 20 -10 -30 IMD3 Gain 10 1800 -40 1850 1900 1950 2000 2050 -50 2100 40 30 d e nd m 25 IMDLow -45 20 15 10 -55 -65 36 38 40 42 44 46 48 50 52 2050 2100 -50 2150 45 30 -35 25 20 IMD Up -45 -65 0 40 35 15 -55 10 IMD Low 34 36 38 40 42 44 46 48 50 5 52 0 Average Output Power (dBm) Average Output Power (dBm) Data Sheet -40 Efficiency 5 IMD Up 34 IMD (dBc) 30 2000 -30 IMD3 Frequency (MHz) -25 Drain Efficiency (%) IMD (dBc -35 1950 -20 -15 40 35 1900 n g i VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 7.5:1, 3.84 MHz BW 45 Efficiency 1850 s e d -10 Single-carrier WCDMA Drive-up Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8.5:1, 3.84 MHz BW -25 ew n r fo e r t no Gain 20 1800 Frequency (MHz) -15 Efficiency 10 2150 m o ec Return Loss 50 Drain Efficiency (%) 50 0 60 Gain (dB) / Efficiency (%) Gain (dB) / Efficiency (%) Return Loss Return Loss (dB) / IMD (dBc) 0 60 Return Loss (dB) / IMD (dBc) VDD = 30 V, IDQ = 2.6 A, POUT = 100 W, PAR = 7.5:1 4 of 9 Rev. 03, 2015-10-01 PTFB193408SV Typical Performance (cont.) CW Gain Performance at selected IDQ Power Sweep, CW Performance VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, VDD = 28 V, ƒ = 1990 MHz Gain 50 20 40 18 30 20 17 16 21 Efficiency 39 41 43 45 47 49 10 51 53 55 Gain (dB) Gain (dB) 19 60 Drain Efficiency (%) 20 IDQ = 3.2 A 19 18 Output Power (dBm) d e nd 39 m m o ec +25°C +85°C –10°C r t no 40 20 17 Efficiency 41 43 45 47 49 51 51 53 55 57 Output Power, PEP (dBm) 53 55 57 3rd Order -30 5th -40 -50 -60 10 -70 0 -80 7th 39 41 43 45 47 49 51 53 55 Output Power, PEP (dBm) Output Power, PEP (dBm) Data Sheet 49 -20 50 30 39 47 -10 60 18 16 45 VDD = 30 V, IDQ = 2.6 A, ƒ1 = 1989 MHz, ƒ2 = 1990 MHz IMD (dBc) Gain (dB) 19 43 Intermodulation Distortion vs. Output Power Efficiency (%) Gain 41 e CW Performance 20 IDQ = 2.0 A IDQ = 1.7 A VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz 21 ew n r fo 16 s e d n g i IDQ = 2.6 A 17 0 IDQ = 3.5 A 5 of 9 Rev. 03, 2015-10-01 PTFB193408SV Broadband Circuit Impedance (combined leads) Z Source W Frequency MHz R jX 1900 1.10 1930 Z Load W R jX –3.23 0.55 –2.09 1.11 –3.16 0.54 –2.01 1960 1.11 –3.09 0.53 –1.93 1990 1.12 –3.03 0.53 –1.86 2020 1.12 –2.97 0.52 –1.78 Z Source D (60) R801 C804 C803 R802 C801 R804 VDD R803 C212 S2 220 VFP 9R8 d e nd C202 C802 C102 C107 C106 RF_IN C105 L102 m m o ec R102 VDD C203 RF_OUT C204 r t no C101 r o f w e n s e d n g i e PTFB193408SV L101 R101 C201 220 VFP 0R6 C104 C103 C207 S3 S1 VG C211 C208 Z Load S G G Reference Circuit R04350, .020 D C210 VDD C206 C205 C209 PTFB193408_IN_01 PTFB193408_OUT_01 R04350, .020 (63) b 1 9 3 4 0 8 s v - v 1 _ C D _ 9 - 2 8 - 2 0 1 2 Reference circuit assembly diagram (not to scale) Reference Circuit Assembly DUT PTFB193408SV V1 Test Fixture Part No. LTN/PTFB193408SV PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at(http://www.infineon.com/rfpower) Data Sheet 6 of 9 Rev. 03, 2015-10-01 PTFB193408SV Reference Circuit (cont.) Component Information Component Description Suggested Supplier P/N Input C101, C102 Chip capacitor, 1 µF Digi-Key NFM18PS105R0J3D-ND C103, C104 Capacitor, 10 µF Digi-Key 490-4393-2-ND C105, C106 Capacitor, 18 pF ATC 800A180JT C107 Chip capacitor, 1.5 pF ATC ATC100A1R5BW150XB C801 Chip capacitor, 1,000 pF Digi-Key PCC1772CT-ND C802 Capacitor, 1 µF Digi-Key 490-4736-2-ND C803, C804 Capacitor, 10 µF Digi-Key 587-1818-2-ND L101, L102 Inductor, 22 nH ATC R101, R102, R803 Resistor, 10 W Digi-Key R801 Resistor, 100 W Digi-Key R802 Resistor, 1,300 W Digi-Key R804 Resistor, 1,200 W Digi-Key S1 Potentiometer, 2k W Digi-Key S2 Transistor Infineon Technologies BCP56-ND S3 Voltage Regulator Digi-Key LM780L05ACM-ND d e nd Output C201, C202 Capacitor, 220 µF C203, C204 Capacitor, 18 pF C205, C206, C207, C208 Capacitor, 4.7 µF C209, C210, C211, C212 Capacitor, 10 µF m m o ec Pinout Diagram V1 e r t no D1 Data Sheet 0805WL220JT ew n r fo d P10GTR-ND P100GTR-ND P1.3KGTR-ND P1.2KGTR-ND 3224W-202ECT-ND Digi-Key PCE4444TR-ND ATC 800A180JT Digi-Key 490-1864-2-ND Digi-Key 587-1818-2-ND V2 Pin V1, V2 G1, G2 D1, D2 S D2 S G1 es n g i G2 Description VDD Gate Drain Source (flange) H-34275G-6-2_gw_pd_10-10-2012 7 of 9 Rev. 03, 2015-10-01 PTFB193408SV Package Outline Specifications Package H-34275G-6/2 (formed leads) 30.61 [1.205] 2X 0.13 +0.13 -0.08 [.005+.005 -.003 ] (SPH V1, V2) (13.72 [.540]) 2X D 45° x .64 [.025] 2X (1.27 [.050]) 2X 30° 2X 2.22 [.087] 2X 2.29 [.090] CL V1 D1 D2 V2 10.16 [.400] CL G1 G2 4X R0.51+.38 -.13 [R.020+.015 -.005 ] CL CL 4.57+0.25 -0.13 d e nd 4X 12.45 [.490] 2X 26.16 [1.030] 31.24±0.28 [1.230±.011] r o f w e n r t no (15.14±0.50 [.596±.020]) 4X 0.13±0.08 [.005±.003] (SPH D1, D2, G1, G2) e CL m o ec n g i 6X 1.00+0.25 -0.10 [.039 +.010 -.004 ] 5°±3° m [.180+.010 -.005 ] CL s e d 6X 1.50±0.25 [.059±.010] 1.63 [0.064] H-34275G-6/2_gw_po_03_08-10-2012 32.26 [1.270] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. Diagram Notes–unless otherwise specified: Primary dimensions are mm. Alternate dimensions are inches. 1. 2. Interpret dimensions and tolerances per ASME Y14.5M-1994. All tolerances ± 0.127 [.005] unless specified otherwise. 2. 3. Primary dimensions are mm. Alternate dimensions are inches. Pins: D1, D2 – drain, G1, G2 – gate, S – source, V1, V2 – VDD. 3. 4. All tolerances ±0.127 [0.005] unless specified otherwise. 5. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001]. DD. 4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – V Gold plating thickness: 0.25 micron [10 microinch] max. 5. 6. Lead thickness: 0.13 + 0.051/ –0.025 mm [0.005 +0.002/ –0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower) Data Sheet 8 of 9 Rev. 03, 2015-10-01 PTFB193408SV V1 Revision History: 2015-10-01 Previous Version: 2012-11-30, Data Sheet, Rev. 02.1 Page All Data Sheet Subjects (major changes since last revision) Not recommended for new design We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International d e nd r o f w e n s e d n g i e Edition 2015-10-01 Published by Infineon Technologies AG 85579 Neubiberg, Germany m m o ec r t no © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 03, 2015-10-01