PXFC193808SVV1R250XTMA1

PXFC193808SV Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz Description The PXFC193808SV is a 380-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 • Broadband internal input and output matching • Typical pulsed CW performance, 1842.5 MHz, 28 V, - Output power at P1dB = 380 W - Efficiency = 54.9% - Gain = 21 dB • Integrated ESD protection • ESD: Human Body Model, Class 2 (per ANSI/ ESDA/JEDEC JS-001) • Capable of handling 10:1 VSWR @28 V, 200 W (1-C WCDMA) output power • Low thermal resistance • Pb-free and RoHS compliant 60 20 40 Gain 16 20 Efficiency 0 12 -20 8 PAR @ 0.01% CCDF 4 0 -40 -60 c193808sv-gr1c 25 30 35 40 45 50 Efficiency (%) Peak/Average (dB), Gain (dB) PXFC193808SV Package H-37275G-6/2 55 Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, IDQ = 2880 mA, POUT = 80 W avg, ƒ = 1880 MHz. 3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF. Characteristic Symbol Min Typ Max Unit Gain Gps 19.5 21 — dB Drain Efficiency ηD 28.5 30.3 — % ACPR — –33.5 –32 dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 02.1, 2015-01-13 PXFC193808SV DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.19 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 2.88 A VGS 2.3 2.6 2.9 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 280 W CW) RθJC 0.18 °C/W Junction Temperature Ordering Information Type and Version Order Code Package and Description PXFC193808SV V1 R250 PXFC193808SVV1R250XTMA1 H-37275G-6/2, ceramic open-cavity, push-pull, earless Tape & Reel, 250 pcs Data Sheet 2 of 10 Shipping Rev. 02.1, 2015-01-13 PXFC193808SV Typical Performance (data taken in an Infineon production test fixture) Single-carrier WCDMA Drive-up Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2850 mA, ƒ = 1805 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth VDD = 28 V, IDQ = 2850 mA, ƒ = 1842.5 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 40 Efficiency 16 20 12 0 8 -20 4 -40 PAR @ 0.01% CCDF 0 c193808sv-gr1a 25 30 35 40 45 50 20 40 Gain 16 0 12 -20 8 PAR @ 0.01% CCDF 4 0 -60 20 Efficiency -40 c193808sv-gr1b 25 55 30 35 40 45 Efficiency (%) Peak/Average (dB), Gain (dB) Gain 20 60 24 60 Efficiency (%) Peak/Average (dB), Gain (dB) 24 50 -60 55 Average Output Power (dBm) Average Output Power (dBm) Single-carrier WCDMA Drive-up Single-carrier WCDMA Broadband VDD = 28 V, IDQ = 2850 mA, ƒ = 1805.0, 1842.5, 1880.0 MHz, VDD = 28 V, IDQ = 2850 mA, POUT = 49 dBm, 3GPP WCDMA signal, 10 dB PAR 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW 25 1805.0 MHz 1842.5 MHz 1880.0 MHz 50 -30 40 ACP Up & Low -40 30 -50 20 Efficiency -60 20 Gain (dB) -20 50 Gain 40 15 30 Efficiency 10 20 Drain Efficiency (%) 60 Drain Efficiency(%) ACP Up (dBc), ACP Low (dBc) -10 10 -70 c193808sv-gr2 27 32 37 42 47 52 5 1700 0 57 Average Output Power (dBm) Data Sheet 10 2000 c193808sv-gr3a 1800 1900 Frequency (MHz) 3 of 10 Rev. 02.1, 2015-01-13 PXFC193808SV Single-carrier WCDMA Broadband Pulsed CW Performance VDD = 28 V, IDQ = 2850 mA, POUT = 49 dBm, 3GPP WCDMA signal, 10 dB PAR VDD = 28 V, IDQ = 2850 mA 0 24 -15 -5 22 -20 -10 -15 -30 -20 -35 -25 -40 1700 18 16 20 12 10 10 c193808sv-gr4 37 47 52 Pulsed CW Performance at selected VDD IDQ = 2850 mA, ƒ = 1805 MHz at selected VDD IDQ = 2850 mA, ƒ = 1842.5 MHz 70 24 60 22 VDD = 24 V VDD = 28 V VDD = 32 V 40 30 Efficiency 14 20 Power Gain (dB) 50 Efficiency (%) 20 0 57 Pulsed CW Performance 70 60 Gain Gain Power Gain (dB) 42 Output Power (dBm) 22 16 30 Frequency (MHz) 24 18 40 1805.0 MHz 1842.5 MHz 1880.0 MHz Efficiency -30 2000 1900 50 14 c193808sv-gr3b 1800 60 20 50 VDD = 24 V VDD = 28 V VDD = 32 V 18 16 40 30 14 20 Efficiency (%) Return Loss ACP Up ACP Low Gain 20 Gain (dB) -25 70 Efficiency (%) -10 Input Return Loss (dB) ACP Up (dBc), ACP Low (dBc) Typical Performance (cont.) Efficiency 12 10 c193808sv-gr5a 33 37 41 45 49 53 57 10 12 0 10 61 c193808sv-gr5b 33 37 41 45 49 53 57 0 61 Output Power (dBm) Output Power (dBm) Data Sheet 10 4 of 10 Rev. 02.1, 2015-01-13 PXFC193808SV Pulsed CW Performance CW Performance Small Signal at selected VDD IDQ = 2850 mA, ƒ = 1880 MHz Gain & Input Return Loss VDD = 28 V, IDQ = 3500 mA Gain 20 0 60 22 -5 50 VDD = 24 V VDD = 28 V VDD = 32 V 18 24 40 16 30 14 20 Power Gain (dB) Power Gain (dB) 22 70 Efficiency (%) 24 Efficiency 12 10 c193808sv-gr5c 33 37 41 45 49 53 57 20 -10 Gain 18 -15 16 -20 14 -25 Return Loss 10 12 0 -35 10 1650 1700 1750 1800 1850 1900 1950 2000 -30 Input Return Loss (dB) Typical Performance (cont.) c193808sv-gr6 61 Frequency (MHz) Output Power (dBm) See next page for circuit impedance and device load pull performance Data Sheet 5 of 10 Rev. 02.1, 2015-01-13 PXFC193808SV Broadband Circuit Impedance Z Source D1 Z Load S G1 G2 D2 Frequency [MHz] Z Source [Ω] Z Load [Ω] 1805.0 0.59 –j5.21 1.87 –j2.27 1842.5 0.55 –j5.14 1.92 –j2.38 1880.0 0.55 –j5.07 1.94 –j2.54 Load Pull Performance D Z Source Z Load G S Single side pulsed CW signal: 10 µsec, 10% duty cycle; 28 V, 1440 mA P3dB Class AB Max Output Power Max Efficiency Freq [MHz] Zin [Ω] Zo [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zo [Ω] Gain [dB] POUT [dBm] POUT [W] Efficiency [%] 1805.0 0.90 – j6.31 5.32 – j5.58 17.6 54.64 291 55.8 3.61 – j3.45 19.3 53.81 240 64.0 1842.5 1.26 – j7.08 5.67 – j5.06 17.5 54.57 286 55.8 3.60 – j3.43 19.2 53.77 238 63.7 1880.0 1.86 – j8.27 6.17 – j4.71 18.0 54.52 283 54.8 3.52 – j3.70 19.6 53.73 236 63.2 Single side pulsed CW signal: 10 µsec, 10% duty cycle; 28 V, 1440 mA P1dB Class AB Max Output Power Max Efficiency Freq [MHz] Zin [Ω] Zo [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zo [Ω] Gain [dB] POUT [dBm] POUT [W] Efficiency [%] 1805.0 0.90 – j6.31 4.22 – j5.43 19.8 53.90 245 54.4 2.89 – j2.95 21.9 52.44 175 63.1 1842.5 1.26 – j7.08 4.30 – j5.28 19.7 53.86 243 55.0 2.80 – j3.08 21.8 52.36 172 62.8 1880.0 1.86 – j8.27 5.04 – j5.46 20.0 53.83 241 53.0 2.79 – j3.85 21.8 52.67 185 62.1 Data Sheet 6 of 10 Rev. 02.1, 2015-01-13 PXFC193808SV Reference Circuit, 1805 MHz to 1880 MHz DUT PXFC193808SV V1 Reference Circuit Part No. LTN/PXFC193808SV V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference circuit on the Infineon Web site at www.infineon.com/rfpower (60) RO4350, .020 C804 R803 C801 R802 C802 R801 L101 R804 C215 C803 (62) C213 VDD S2 S3 S1 RO4350, .020 C210 C216 C214 C101 R101 C203 C104 C106 RF_IN C107 C105 R102 C202 C209 C211 C212 RF_OUT C217 C208 C103 VDD C201 C206 L102 C102 C207 C205 C204 PXFC193808FV_OUT_01A PXFC193808FV_IN_01 px f c1 9 3 80 8 fv _ CD _1 - 1 3- 1 5 Reference circuit assembly diagram (not to scale) Data Sheet 7 of 10 Rev. 02.1, 2015-01-13 PXFC193808SV Reference Circuit (cont.) Reference circuit bill of Materials Component Description Manufacturer Part Number C101, C102 Capacitor, 0.7 pF ATC ATC100A0R7JT250XT C104, C103 Capacitor, 10 µF Murata Electronics North America LLL31BC70G106MA01L C106, C105 Capacitor, 18 pF ATC ATC800A180GT250XT C107 Capacitor, 1.0 pF ATC ATC100A1R0CW150XB C801, C804 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C802 Capacitor, 0.001 µF Panasonic ECJ-1VB1H102K C803 Capacitor, 1 µF Murata Electronics North America GRM21BR71H105KA12L L101, L102 RF chip inductor, 22 nH ATC 0805WL220JT R101, R102 Chip resistor, 10 ohms Panasonic – ECG ERJ-3GEYJ100V R801 Chip resistor, 100 ohms Panasonic – ECG ERJ-3GEYJ101V R802 Chip resistor, 1.3K ohms Panasonic – ECG ERJ-3GEYJ132V R803 Chip resistor, 10 ohms Panasonic – ECG ERJ-3GEYJ100V R804 Chip resistor, 1.2K ohms Panasonic – ECG ERJ-3GEYJ122V S1 Potentiometer, 2K ohms Bourns Inc. 3224W-1-202E S2 Transistor Fairchild Semiconductor BCP56 S3 Voltage regulator Texas Instruments LM78L05ACM C201, C205, C215, C216 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C202, C209 Capacitor, 0.5 pF ATC ATC100A0R5CW150XB C203, C208 Capacitor, 2.1 pF ATC ATC800A2R1BT250XT C204, C206, C213, C214 Capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C207, C210 Capacitor, 220 µF Panasonic – ECG EEE-FP1V221AP Input Output C211, C212 Capacitor, 18 pF ATC ATC600F0R8BT250XT C217 Capacitor, 0.3 pF ATC ATC100A0R3CW150XB Pinout Diagram (top view) S D1 D2 G1 G2 V2 Pin D1 D2 G1 G2 S H-49284G-6/2_gw_pd_03-27-2013 V1 Description Drain Device 1 (Main) Drain Device 2 (Peak) Gate Device 1 (Main) Gate Device 2 (Peak) Source (flange) Lead connections for PXFC193808SV Data Sheet 8 of 10 Rev. 02.1, 2015-01-13 PXFC193808SV Package Outline Specifications Package H-37275G-6/2 30.61 [1.205] 2X 0.13 +0.13 -0.08 [.005+.005 -.003 ] (SPH V1, V2) (13.72 [.540]) 2X ' 45° x .64 [.025] 2X (1.27 [.050]) 2X 30° 2X 2.22 [.087] 2X 2.29 [.090] CL V1 D1 D2 9.14 [.360] G1 4X R0.51+.38 -.13 [R.020+.015 -.005 ] (15.14±0.50 [.596±.020]) CL G2 CL CL 4X 12.45 [.490] 2X 26.16 [1.030] 5°±3° 4X 0.13±0.08 [.005±.003] (SPH D1, D2, G1, G2) 4.58+0.25 -0.13 [ .180+.010 -.005 ] 31.24±0.28 [1.230±.011] (1.63 [0.064]) 6X 1.00 +0.25 -0.10 [.039+.010 -.004 ] V2 10.16 [.400] CL 6X 1.50±0.25 [.059±.010] CL H-37275G-6/2_gw_po_03_07-25-2013 H-37275G-6/2_gw_po_03.1_07-24-2013 32.26 [1.270] S Diagram Notes—unless otherwise specified: Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD. 4. Pins: D1, D2 – drain, G1, G2 – gate, V1, V2 – VDD, S (flange) – source. 5. Lead thickness: 0.13 + 0.051/–0.025 mm [0.005+0.002/–0.001 inch]. 5. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. 6. Gold plating thickness: 1.14 ±0.38 micron [45 ±15 microinch]. Find the latest and most complete information tabout products and packaging at the Infineon Internet page www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 02.1, 2015-01-13 PXFC193808SV V1 Revision History Revision Date Data Sheet Page Subjects (major changes at each revision) 01 2014-07-24 Advance All Data Sheet reflects advance specification for product development 02 2015-01-09 Production All Data Sheet represents released product specifications, including reference circuit and updated performance information. 02.1 2015-01-13 Production 8 BOM updated with correct part numbers and manufacturers. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2015-01-13 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 02.1, 2015-01-13