PTVA101K02EVV1XWSA1

PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-36275-4 Features Power Sweep, Pulsed RF • Broadband input matching VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz • High gain and efficiency • Integrated ESD protection 26 50 128µs, 1% MODE-S 18 14 40 30 Gain 10 20 6 10 Efficiency a101k02ev_1-1 30 35 40 45 50 55 60 65 • Pb-free and RoHS compliant Drain Efficiency (%) Gain (dB) 22 2 • Low thermal resistance 60 128µs, 10% • Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition, (32µS ON / 18µS OFF) X 80, LTDF = 6.4%. 0 Pout (dBm) RF Characteristics Pulsed RF Performance (tested in Infineon test fixture) VDD = 50 V, IDQ = 0.15 A, POUT = 900 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 21 dB Drain Efficiency hD 62 65 — % All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 02, 2013-04-15 PTVA101K02EV RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 75 mA per side, Input signal (tr = 5 ns, tf = 6.5 ns), TCASE = 25°C, class AB test Mode of operation ƒ IRL P1dB Gain Eff POUT Gain P3dB Eff POUT Pdroop(pulse) tr tf (MHz) (dB) (dB) (%) (W) (dB) (%) (W) 128 µs, 10% 1030 20 18 56 980 16 57 1090 0.18 7 8 128 µs, 1% 1030 20 18.1 57 1010 16.1 58 1130 0.16 7 8 1030 20 17.9 54 930 14.9 55 1060 0.45 7 8 128 µs, 10% 1090 13 18.3 59 920 16.2 60 1050 0.16 7 8 128 µs, 1% 1090 14 18.4 60 950 16.4 61 1080 0.17 7 8 MODE-S dB @ 1000 W (ns) (ns) (32µS ON / 18µS OFF)X80, LTDF=6.4% DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 150 mA VGS 3 3.35 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 1000 W, MODE–S) RqJC 0.16 Data Sheet 2 of 9 °C/W Rev. 02, 2013-04-15 PTVA101K02EV Ordering Information Type and Version Order Code Package and Description Shipping PTVA101K02EV V1 PTVA101K02EVV1XWSA1 H-36275-4, bolt-down Tray PTVA101K02EV V1 R250 PTVA101K02EVV1R250XTMA1 H-36275-4, bolt-down Tape & Reel, 250pcs Typical RF Performance (tested with LTN/PTVA101K02EV V1 test fixture, 1030 MHz) Power Sweep, Pulsed RF Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz Gain (dB) 22 128µs, 1% MODE-S 18 14 60 26 50 22 40 30 Gain 10 20 6 10 2 Efficiency a101k02ev_1-1 30 35 40 45 50 55 60 65 Gain (dB) 128µs, 10% Drain Efficiency (%) 26 18 14 10 128µs, 10% 128µs, 1% MODE-S 6 2 0 a101k02ev_1-2 20 24 28 32 36 40 44 48 PIN (dBm) Pout (dBm) Data Sheet Gain 3 of 9 Rev. 02, 2013-04-15 PTVA101K02EV Typical RF Performance (cont.) (tested with LTN/PTVA101K02EV V1 test fixture, 1030 MHz) Power Sweep, Pulsed RF, Vdd vs Gain&Eff VDD = 50 V, IDQ = 150 mA, TCASE = 25°C 128µs, 10% D.C, ƒ = 1030 MHz 30 V 35 V 40 V 45 V 50 V Gain (dB) 22 18 60 50 40 14 30 Gain 10 20 6 2 10 Efficiency a101k02ev_1-5 30 35 40 45 50 55 60 65 Drain Efficiency (%) 26 0 POUT (dBm) Typical RF Performance (tested with LTN/PTVA101K02EV E6 test fixture, 1090 MHz) Power Sweep, Pulsed RF Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1090 MHz VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1090 MHz 30 70 128µs, 10% 18 50 40 Gain 14 30 10 20 6 2 Efficiency a101k02ev_1-3 30 35 40 45 50 55 60 65 22 Gain (dB) 22 Gain (dB) 60 128µs, 1% Drain Efficiency (%) 26 26 Data Sheet 18 14 10 10 6 0 2 POUT (dBm) Gain 128µs, 10% 128µs, 1% a101k02ev_1-4 20 24 28 32 36 40 44 48 PIN (dBm) 4 of 9 Rev. 02, 2013-04-15 PTVA101K02EV Broadband Circuit Impedance Z Source D Z Load S G G D Z Source W Z Load W Freq [MHz] R jX R jX 1030 2.00 1.51 1.48 0.07 1090 2.35 0.64 1.12 –0.28 Note: Measurement on single side. Load Pull Performance Each Side Load Pull Performance –16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 100 mA Max Output Power Freq POUT POUT [MHz] [dBm] [W] Eff [%] Gain [dB] Max Efficiency ZLoad [W] POUT POUT [dBm] [W] Eff [%] Gain [dB] Z Optimum ZLoad [W] POUT POUT [dBm] [W] Eff [%] Gain [dB] ZLoad [W] ZSource [W] 960 58.10 645.65 61.90 16.46 1.14 – j0.08 56.00 398.11 72.20 18.68 0.79 + j0.69 57.50 562.34 68.00 17.50 0.91 + j0.33 1.41 – j1.62 1030 57.80 602.56 55.60 16.00 0.91 – j0.08 56.00 398.11 71.00 18.80 0.71 + j0.66 57.10 512.86 65.00 17.50 0.78 + j0.34 1.76 – j2.12 1090 57.90 616.60 61.80 16.95 0.95 + j0.27 56.20 416.87 69.80 18.68 0.83 + j0.90 57.40 549.54 65.70 17.73 0.87 + j0.62 2.34 – j2.39 1150 57.36 544.50 50.52 15.80 1.11 + j0.12 56.90 489.78 65.00 17.63 0.94 + j0.76 57.20 524.81 61.20 17.00 1.01 + j0.48 3.21 – j1.47 1215 57.26 532.11 53.90 15.60 1.20 + j0.01 55.40 346.74 62.30 17.46 0.59 + j0.81 56.70 467.74 58.45 16.60 0.88 + j0.49 2.37 – j0.84 Data Sheet 5 of 9 Rev. 02, 2013-04-15 PTVA101K02EV Reference Circuit (LTN/PTVA101K02EV V1 test fixture, 1030 MHz) C215 R806 C803 R808 C804 R809 R810 S3 RO6006, .025 (62) R202 S1 S2 + C105 C205 C203 R807 C104 R104 R811 VDD C206 C208 C207 C204 RO6006, .025 (62) R102 C106 C107 C202 RF_IN RF_OUT C201 C108 1030 MHz C101 R805 C103 R101 PTVA101K02EV_OUT_01 R103 R801 + C214 S6 VDD C212 C102 S5 C802 C209 S4 R812 R804 C211 C213 C210 PTVA101K02EV_IN_02 R201 p t v a 1 0 1 K 0 2 e v _ C D _ 0 4 - 1 7 - 2 0 1 3 R802 C801 R803 C216 Reference circuit assembly diagram (not to scale)* Data Sheet 6 of 9 Rev. 02, 2013-04-15 PTVA101K02EV Reference Circuit (cont.) Reference Circuit Assembly DUT Test Fixture Part No. PCB Frequency (MHz) PTVA101K02EV LTN/PTVA101K02EV V1 Rogers 6006, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 6.15 1030 MHz PTVA101K02EV LTN/PTVA101K02EV E4 Rogers 6006, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 6.15 1090 MHz PTVA101K02EV LTN/PTVA101K02EV E6 Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 10.2 1090 MHz PTVA101K02EV LTN/PTVA101K02EV E8 Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 10.2 1030 MHz Description Suggested Manufacturer P/N C101, C106 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C102, C105, C107, C108 Capacitor, 39 pF ATC ATC100B390KW500XB C103, C104 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C801, C802, C803, C804 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R104, R801, R807 Resistor, 10 Ohm Panasonic Electronic Components ERJ-8GEYJ100V R102, R103 Resistor, 100 Ohm Panasonic Electronic Components ERJ-8GEYJ101V R802, R808 Resistor, 6200 Ohm Panasonic Electronic Components ERJ-8GEYJ623V R803, R809 Resistor, 1300 Ohm Panasonic Electronic Components ERJ-3GEYJ132V R804, R810 Resistor, 1200 Ohm Panasonic Electronic Components ERJ-3GEYJ122V R805, R806, R811, R812 Resistor, 2000 Ohm Panasonic Electronic Components ERJ-8GEYJ202V S1, S4 Transistor Infineon Technologies BCP56 S2, S5 Voltage regulator National Semiconductor LM7805 S3, S6 Potentiometer, 2k ohm Bourns Inc. 3224W-202ECT-ND C201, C202, C203, C214 Capacitor, 39 pF ATC ATC100B390KW500XB C204, C209 Capacitor, 100 µF Panasonic Electronic Components EEV-HD1V101P C205, C211 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C206, C210 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C207, C213 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C208, C212 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C215, C216 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA R201, R202 Resistor, 5600 Ohm Panasonic Electronic Components ERJ-8GEYJ562V Components Information Component Input Output Data Sheet 7 of 9 Rev. 02, 2013-04-15 PTVA101K02EV Package Outline Specifications Package H-36275-4 13.72 [.540] 2X 45° X 1.19 [45° X .047] 2x 2.03 [.080] REF CL 2X R1.59 [R.062] D1 3.23±0.51 [.127±.020] D2 S 16.612±0.500 [.654±.020] 9.144 [.360] CL 10.16 [.400] G2 G1 8X R0.51+0.13 -0.51 [ R.020+.005 -.020 ] CL CL 4X 11.68 [.460] 35.56 [1.400] 2.13 [.084] SPH 4.58+0.25 -0.13 [.180 +.010 -.005 ] 31.242±0.280 [1.230±.011] 1.63 [.064] H-36275-4_po_01_10-22-2012 CL CL CL 41.15 [1.620] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 5. Lead thickness: 0.127 ±0.051 mm [0.005 ±0.002 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 9 Rev. 02, 2013-04-15 PTVA101K02EV V1 Revision History: 2013-04-15 Previous Version: 2012-06-07, Preliminary Data Sheet Page Subjects (major changes since last revision) All Data Sheet reflects released product specifications Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2013-04-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 02, 2013-04-15