SPA06N60C3
CoolMOSTM Power Transistor
Product Summary
Features
• New revolutionary high voltage technology
• Ultra low gate charge
V DS @ T j,max
650
V
R DS(on),max
0.75
Ω
I D1)
6.2
A
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
P-TO220-3-31
• Extreme dv /dt rated
• Improved transconductance
• Fully isolated package (2500 V AC; 1 minute)
Type
Package
Ordering Code
Marking
SPA06N60C3
PG-TO220-3-31
Q67040-S4631
06N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current 1)
ID
Value
T C=25 °C
6.2
T C=100 °C
3.9
Pulsed drain current1)
I D,pulse
T C=25 °C
18.6
Avalanche energy, single pulse
E AS
I D=3.1 A, V DD=50 V
200
Avalanche energy, repetitive t AR1),2)
E AR
I D=6.2 A, V DD=50 V
0.5
Avalanche current, repetitive t AR1)
I AR
Drain source voltage slope
dv /dt
Gate source voltage
Unit
A
mJ
6.2
A
I D=6.2 A, V DS=480 V,
T j=125 °C
50
V/ns
V GS
static
±20
V
V GS
AC (f >1 Hz)
±30
Power dissipation
P tot
T C=25 °C
32
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
Rev. 1.3
Rev 1.4
page 1
1
2010-12-21
2017-08-17
SPA06N60C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.92
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
80
Soldering temperature
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
600
-
-
V
-
700
-
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=6.2 A
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.26 mA
2.1
3
3.9
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
-
100
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=3.9 A,
T j=25 °C
-
0.68
0.75
Ω
V GS=10 V, I D=3.9 A,
T j=150 °C
-
1.82
-
Gate resistance
RG
f =1 MHz, open drain
-
1
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=3.9 A
-
5.6
-
Rev. 1.3
Rev 1.4
page 2
2
S
2010-12-21
2017-08-17
SPA06N60C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
620
-
-
200
-
-
17
-
-
28
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
Effective output capacitance, energy
related3)
C o(er)
Effective output capacitance, time
related4)
C o(tr)
-
47
-
Turn-on delay time
t d(on)
-
7
-
Rise time
tr
-
12
-
Turn-off delay time
t d(off)
-
52
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
3.3
-
Gate to drain charge
Q gd
-
12
-
Gate charge total
Qg
-
24
31
Gate plateau voltage
V plateau
-
5.5
-
V GS=0 V, V DS=25 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=480 V,
V GS=10 V, I D=6.2 A,
R G=12 Ω
ns
Gate Charge Characteristics
V DD=480 V, I D=6.2 A,
V GS=0 to 10 V
1)
Pulse width limited by maximum temperature T j,max only
2)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
4)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.3
Rev 1.4
page 3
3
nC
V
2010-12-21
2017-08-17
SPA06N60C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
6.2
-
-
18.6
-
0.97
1.2
V
-
400
-
ns
-
3.5
-
µC
-
25
-
A
Reverse Diode
Diode continuous forward current
IS
A
T C=25 °C
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=6.2 A,
T j=25 °C
V R=480 V, I F=I S,
di F/dt =100 A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
typ.
R th1
0.034
R th2
Value
typ.
C th1
0.0000507
0.15
C th2
0.00045
R th3
0.388
C th3
0.00117
R th4
0.713
C th4
0.0114
R th5
1.6
C th5
0.939
Rev. 1.3
Rev 1.4
Unit
K/W
page 4
4
Ws/K
2010-12-21
2017-08-17
SPA06N60C3
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
40
102
limited by on-state
resistance
1 µs
30
10
1
10 µs
I D [A]
P tot [W]
100 µs
20
100
1 ms
DC
10
10-1
0
10-2
0
40
80
120
100
160
101
10 ms
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
20
20 V
7V
16
0.5
100
6.5 V
0.2
Z thJC [K/W]
12
6V
I D [A]
0.1
0.05
8
10
-1
5.5 V
0.02
0.01
single pulse
5V
4
4.5 V
4V
10-2
10-6
0
10-5
10-4
10-3
10-2
10-1
100
101
0
Rev. 1.3
Rev 1.4
5
10
15
20
V DS [V]
t p [s]
page 5
5
2010-12-21
2017-08-17
SPA06N60C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
8
4
6V
20 V
V4
V 4.5
V 5.5
V5
5.5 V
7V
6.5 V
6
3
R DS(on) [Ω]
V6
I D [A]
5V
4
V 20
2
4.5 V
2
1
4V
0
0
0
5
10
15
20
0
2
4
6
8
10
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=3.9 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
2
25
1.6
20
1.2
15
I D [A]
R DS(on) [Ω]
C °25
98 %
0.8
10
typ
C °150
5
0.4
0
0
-60
-20
20
60
100
140
0
180
Rev. 1.3
Rev 1.4
2
4
6
8
10
V GS [V]
T j [°C]
page 6
6
2010-12-21
2017-08-17
SPA06N60C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=6.2 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
12
10
25 °C
V 120
25 °C, 98%
V 480
150 °C, 98%
101
8
I F [A]
V GS [V]
150 °C
6
100
4
2
10-1
0
0
10
20
0
30
0.5
Q gate [nC]
1
1.5
2
2.5
V SD [V]
11 Avalanche SOA
12 Avalanche energy
I AR=f(t AR)
E AS=f(T j); I D=3.1 A; V DD=50 V
parameter: T j(start)
8
250
200
6
E AS [mJ]
I AV [A]
150
4
100
25 °C
125 °C
2
50
0
10-3
0
10-2
10-1
100
101
102
103
20
t AR [µs]
Rev. 1.3
Rev 1.4
60
100
140
180
T j [°C]
page 7
7
2010-12-21
2017-08-17
SPA06N60C3
14 Typ. capacitances
V BR(DSS)=f(T j); I D=0.25 mA
C =f(V DS); V GS=0 V; f =1 MHz
700
104
660
103
C [pF]
V BR(DSS) [V]
13 Drain-source breakdown voltage
620
Ciss
102
Coss
580
101
540
100
-60
-20
20
60
100
140
Crss
0
180
T j [°C]
100
200
300
400
500
V DS [V]
15 Typ. C oss stored energy
E oss= f(V DS)
5
4
E oss [µJ]
3
2
1
0
0
100
200
300
400
500
600
V DS [V]
Rev. 1.3
Rev 1.4
page 8
8
2010-12-21
2017-08-17
SPA06N60C3
Definition of diode switching characteristics
Rev. 1.3
Rev 1.4
page 9
9
2010-12-21
2017-08-17
1
2
3
DIMENSIONS
A
A1
A2
b
b1
b2
b3
b4
c
D
D1
E
e
H
L
L1
Q
Rev 1.4
10
MILLIMETERS
MIN.
MAX.
4.50
4.90
2.34
2.85
2.42
2.86
0.65
0.90
0.95
1.38
0.95
1.51
0.65
1.38
0.65
1.51
0.40
0.63
15.67
16.15
8.97
9.83
10.00
10.65
2.54
28.70
29.75
12.78
13.75
3.45
2.83
3.00
3.30
3.15
3.50
DOCUMENT NO.
Z8B00003319
REVISION
07
SCALE 5:1
0
1
2
3
4
5mm
EUROPEAN PROJECTION
ISSUE DATE
27.01.2017
2017-08-17
SPA06N60C3
Revision History
SPA06N60C3
Revision: 2017-08-17, Rev. 1.4
Previous Revision:
Revision Date
1.4
2017-08-17
Subjects (major changes since last version)
Updated package drawing on Page 10
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™,
DAVE™, DI-POL™, DrBlade™,EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™,
FCOS™, HITFET™, HybridPACK™, Infineon™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PROSIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™,
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Trademarks updated August 2015
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Rev 1.4
11
2017-08-17