SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
VDS @ Tjmax
650
V
RDS(on)
0.38
Ω
ID
11
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
PG-TO220FP
• Periodic avalanche rated
PG-TO262
PG-TO220
• Extreme dv/dt rated
• High peak current capability
1
• Improved transconductance
2
3
P-TO220-3-31
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Marking
SPP11N60C3
PG-TO220
Q67040-S4395
11N60C3
SPI11N60C3
PG-TO262
Q67042-S4403
11N60C3
Q67040-S4408
11N60C3
SPA11N60C3
PG-TO220FP
11N60C3
SPA11N60C3E8185 PG-TO220
Maximum Ratings
Parameter
Symbol
Value
SPA
SPP_I
Continuous drain current
Unit
ID
A
TC = 25 °C
11
11 1)
TC = 100 °C
7
71)
33
33
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
340
340
EAR
0.6
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
11
11
A
Gate source voltage static
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
125
33
Operating and storage temperature
Tj , Tstg
Reverse diode dv/dt 7)
dv/dt
A
mJ
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Rev. 3.3
Page 1
-55...+150
15
W
°C
V/ns
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Parameter
Symbol
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.8
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm 2 cooling area 3)
-
35
-
-
-
260
Soldering temperature, wavesoldering
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s 4)
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
2.1
3
3.9
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=500µA, VGS =VDS
Zero gate voltage drain current
I DSS
VDS=600V, V GS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 3.3
RG
µA
Tj=25°C
-
0.1
1
Tj=150°C
-
-
100
VGS=30V, V DS=0V
-
-
100
VGS=10V, ID=7A
Ω
Tj=25°C
-
0.34
0.38
Tj=150°C
-
0.92
-
f=1MHz, open drain
-
0.86
-
Page 2
nA
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics
Parameter
Transconductance
Symbol
gfs
Conditions
VDS≥2*ID*R DS(on)max,
Values
Unit
min.
typ.
max.
-
8.3
-
S
pF
ID=7A
Input capacitance
Ciss
VGS=0V, VDS=25V,
-
1200
-
Output capacitance
Coss
f=1MHz
-
390
-
Reverse transfer capacitance
Crss
-
30
-
-
45
-
-
85
-
Effective output capacitance,5) Co(er)
energy related
VGS=0V,
VDS=0V to 480V
Effective output capacitance,6) Co(tr)
time related
Turn-on delay time
td(on)
VDD=380V, VGS=0/10V,
-
10
-
Rise time
tr
ID=11A,
-
5
-
Turn-off delay time
td(off)
RG =6.8Ω
-
44
70
Fall time
tf
-
5
9
-
5.5
-
-
22
-
-
45
60
-
5.5
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=480V, ID=11A
VDD=480V, ID=11A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=11A
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AR
AV
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5C
o(er)
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
6C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS.
7ISD