FCA16N60N

FCA16N60N N-Channel MOSFET August 2009 TM SupreMOS FCA16N60N N-Channel MOSFET 600V, 16A, 0.170Ω Features • RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A • Ultra low gate charge ( Typ. Qg = 40.2nC) • Low effective output capacitance • 100% avalanche tested • RoHS compliant Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G DS TO-3PN FCA Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) FCA16N60N 600 ±30 16.0 10.1 48.0 355 5.3 1.34 100 20 134.4 1.08 -55 to +150 300 Units V V A A mJ A mJ V/ns V/ns W W/oC oC o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient FCA16N60N 0.93 0.24 40 oC/W Units ©2009 Fairchild Semiconductor Corporation FCA16N60N Rev. A1 1 www.fairchildsemi.com FCA16N60N N-Channel MOSFET Package Marking and Ordering Information Device Marking FCA16N60N Device FCA16N60N Package TO-3PN Reel Size Tape Width Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to VDS = 480V, VGS = 0V VDS = 480V, VGS = 0V, TC = 125oC VGS = ±30V, VDS = 0V 25oC 600 0.73 10 100 ±100 V V/oC µA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 8A VDS = 40V, ID = 8A 2.0 0.170 20 4.0 0.199 V Ω S Dynamic Characteristics Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance (G-S) VDS = 380V, ID = 8A, VGS = 10V (Note 4) VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 480V, VGS = 0V - 1630 70 5 40 176 40.2 6.7 12.9 2.9 2170 95 10 60 52.3 - pF pF pF pF pF nC nC nC Ω Drain Open Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 8A RG = 4.7Ω (Note 4) - 15.8 15.5 60.3 20.2 41.6 41.0 130.6 50.4 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 8A VGS = 0V, ISD = 8A dIF/dt = 100A/µs 319 4.4 16 48 1.2 A A V ns µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 5.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD = 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCA16N60N Rev. A1 2 www.fairchildsemi.com FCA16N60N N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V Figure 2. Transfer Characteristics 100 ID, Drain Current[A] ID, Drain Current[A] 10 10 150 C o 25 C -55 C o o 1 *Notes: 1. 250µs Pulse Test 2. TC = 25 C o 1 *Notes: 1. VDS = 20V 2. 250µs Pulse Test 0.1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 20 2 4 6 VGS, Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [Ω ], Drain-Source On-Resistance IS, Reverse Drain Current [A] 0.5 0.4 VGS = 10V 150 C o 10 25 C o 0.3 VGS = 20V 0.2 *Notes: TC = 25 C o *Notes: 1. VGS = 0V 0.1 0 10 20 30 ID, Drain Current [A] 40 50 1 0.2 2. 250µs Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics 10000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 120V VDS = 380V VDS = 480V 8 7500 Capacitances [pF] Coss *Notes: 1. VGS = 0V 2. f = 1MHz 6 5000 4 2500 Ciss 2 *Notes: ID = 8A Crss 0 0.1 0 1 10 100 VDS, Drain-Source Voltage [V] 600 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 FCA16N60N Rev. A1 3 www.fairchildsemi.com FCA16N60N N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 8A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 100 Figure 10. Maximum Drain Current vs. Case Temperature 20 20µs 100µs DC 10ms ID, Drain Current [A] ID, Drain Current [A] 10 1ms 15 1 Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 0.1 5 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 2 1 Thermal Response [Zθ JC] 0.5 0.2 PDM t1 t2 0.1 0.1 0.05 0.02 0.01 *Notes: 1. ZθJC(t) = 0.93 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) o 0.01 Single pulse 0.005 -5 10 10 -4 10 10 Rectangular Pulse Duration [sec] -3 -2 10 -1 1 FCA16N60N Rev. A1 4 www.fairchildsemi.com FCA16N60N N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCA16N60N Rev. A1 5 www.fairchildsemi.com FCA16N60N N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as D U T V DD V GS • d v / d t c o n t r o lle d b y R G • IS D c o n t r o lle d b y p u ls e p e r io d VGS ( D r iv e r ) G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v /d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FCA16N60N Rev. A1 6 www.fairchildsemi.com FCA16N60N N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FCA16N60N Rev. A1 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com