FCH76N60NF 600V N-Channel MOSFET, FRFET
FCH76N60NF
Features
SupreMOS®
January 2011
tm
600V N-Channel MOSFET, FRFET
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
• RDS(on) = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A • Ultra Low Gate Charge ( Typ.Qg = 230nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant
D
G GD S
TO-247
FCH Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) Ratings 600 ±30 72.8 46 218 7381 24.3 5.43 100 50 543 4.34 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RθJC RθCS RθJA
Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient
1
Ratings 0.23 0.24 40
Units
o
C/W
©2011 Fairchild Semiconductor Corporation FCH76N60NF Rev. A2
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FCH76N60NF 600V N-Channel MOSFET, FRFET
Package Marking and Ordering Information
Device Marking FCH76N60NF Device FCH76N60NF Package TO-247 Reel Size Tape Width Quantity 30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to VDS = 480V, VGS = 0V VDS = 480V, VGS = 0V, TC = 125oC VGS = ±30V, VDS = 0V 25oC 600 0.73 10 100 ±100 V V/oC μA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 38A VDS = 20V, ID = 38A 3.0 28.7 92 5.0 38.0 V mΩ S
Dynamic Characteristics
Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance(G-S) VDS = 380V, ID = 38A, VGS = 10V
(Note 4)
VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 380V, VGS = 0V
-
8305 361 3.3 192 896 230 44 95 1.2
11045 480 5.0 300 -
pF pF pF pF pF nC nC nC Ω
Drain Open
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 38A RG = 4.7Ω
(Note 4)
-
51 44 213 43
112 98 436 96
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 38A VGS = 0V, ISD = 38A dIF/dt = 100A/μs 200 1.8 76 228 1.2 A A V ns μC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 24.3 A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 72.8 A, di/dt ≤ 1200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics
FCH76N60NF Rev. A2
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FCH76N60NF 600V N-Channel MOSFET, FRFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
VGS = 15V 10V 8V 6V 5.5V 5V 4.5V
Figure 2. Transfer Characteristics
500
100
ID, Drain Current[A]
ID, Drain Current[A]
100
150 C
o
10
*Notes: 1. 250μs Pulse Test
10
25 C -55 C *Notes: 1. VDS = 20V 2. 250μs Pulse Test
o
o
2 0.1
2. TC = 25 C
o
1 VDS, Drain-Source Voltage[V]
10
20
1
2
4 6 VGS, Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
50
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
400
IS, Reverse Drain Current [A]
RDS(ON) [Ω], Drain-Source On-Resistance
45
100
o
40
VGS = 10V
150 C 25 C
o
35
VGS = 20V
10
30
*Note: TC = 25 C
o
25
0
50
100 150 ID, Drain Current [A]
200
250
1 0.0
2. 250μs Pulse Test
*Notes: 1. VGS = 0V
0.5 1.0 VSD, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
10
5
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 120V VDS = 300V VDS = 480V
Coss
10 Capacitances [pF]
4
Ciss
8
10
3
6
Crss
10
2
*Note: 1. VGS = 0V 2. f = 1MHz Coss = Cds + Cgd Crss = Cgd
4
10 Ciss = Cgs + Cgd (Cds = shorted) 1 0.01
2
*Note: ID = 38A
0.1 1 10 100 VDS, Drain-Source Voltage [V]
600
0
0
60 120 180 Qg, Total Gate Charge [nC]
240
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FCH76N60NF 600V N-Channel MOSFET, FRFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 38A
BVDSS, [Normalized] Drain-Source Breakdown Voltage
1.1
1.0
0.9
0.8 -100
*Notes: 1. VGS = 0V 2. ID = 250μA
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
30μs 100μs 1ms 10ms
Figure 10. Maximum Drain Current vs. Case Temperature
80
ID, Drain Current [A]
100
10
Operation in This Area is Limited by RDS(on)
DC
ID, Drain Current [A]
60
40
1
*Notes:
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
20
0.01
1
10 100 VDS, Drain-Source Voltage [V]
1000
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
0.3
Thermal Response [ZθJC]
0.1
0.5 0.2 0.1
PDM t1 t2
0.01
0.05 0.02 0.01 Single pulse
*Notes:
1E-3 -5 10
1. ZθJC(t) = 0.23 C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZθJC(t)
o
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
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FCH76N60NF 600V N-Channel MOSFET, FRFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FCH76N60NF 600V N-Channel MOSFET, FRFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
• dv/dt controlled by RG • ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
I SD ( DUT )
IFM , Body Diode Forward Current di/dt
IRM
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
FCH76N60NF Rev. A2
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FCH76N60NF 600V N-Channel MOSFET, FRFET
Mechanical Dimensions
TO-247-3L
Dimensions in Millimeters
FCH76N60NF Rev. A2
7
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FCH76N60NF 600V N-Channel MOSFET, FRFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS™ The Power Franchise® AccuPower™ PowerTrench® FRFET® PowerXS™ The Right Technology for Your Success™ Auto-SPM™ ® Programmable Active Droop™ Global Power ResourceSM Build it Now™ QFET® Green FPS™ CorePLUS™ QS™ Green FPS™ e-Series™ CorePOWER™ TinyBoost™ Quiet Series™ CROSSVOLT™ Gmax™ TinyBuck™ RapidConfigure™ CTL™ GTO™ TinyCalc™ Current Transfer Logic™ IntelliMAX™ ™ TinyLogic® DEUXPEED® ISOPLANAR™ TINYOPTO™ Saving our world, 1mW/W/kW at a time™ Dual Cool™ MegaBuck™ TinyPower™ SignalWise™ EcoSPARK® MICROCOUPLER™ TinyPWM™ EfficentMax™ SmartMax™ MicroFET™ TinyWire™ ESBC™ SMART START™ MicroPak™ TriFault Detect™ SPM® MicroPak2™ ® TRUECURRENT™* STEALTH™ MillerDrive™ μSerDes™ SuperFET® MotionMax™ Fairchild® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor® SuperSOT™-6 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-8 OPTOLOGIC® FACT® ® ® Ultra FRFET™ ® OPTOPLANAR SupreMOS FAST ® UniFET™ SyncFET™ FastvCore™ VCX™ Sync-Lock™ FETBench™ VisualMax™ ®* FlashWriter® * PDP SPM™ XS™ FPS™ Power-SPM™
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2.
A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I51
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
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