FCH76N60N

MOSFET – N-Channel, SUPREMOS 600 V, 76 A, 36 mW FCH76N60N Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−resistance, superior switching performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. www.onsemi.com VDS RDS(ON) MAX ID MAX 600 V 36 m @ 10 V 76 A D Features • • • • • RDS(on) = 28 m (Typ.) @ VGS = 10 V, ID = 38 A Ultra Low Gate Charge (Typ. Qg = 218 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) 100% Avalanche Tested This Device is Pb−Free and is RoHS Compliant G S N-CHANNEL MOSFET Applications • Solar Inverter • AC−DC Power Supply G D S TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 76N60N $Y &Z &3 &K FCH76N60N = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 November, 2020 − Rev. 3 1 Publication Order Number: FCH76N60N/D FCH76N60N MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol FCH76N60N Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V − Continuous (TC = 25°C) 76 A − Continuous (TC = 100°C) 48.1 − Pulsed (Note 1) 228 A ID Parameter Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) 8022 mJ IAR Avalanche Current (Note 1) 25.3 A EAR Repetitive Avalanche Energy (Note 1) 5.43 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) − Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range 543 W 4.34 W/°C −55 to + 150 °C 300 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Second Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: pulse−width limited by maximum junction temperature. 2. IAS = 25.3 A, RG = 25 , starting TJ = 25 °C 3. ISD ≤ 76 A, di/dt ≤ 200 A/s, VDD ≤ 380 V, starting TJ = 25 °C THERMAL CHARACTERISTICS Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. RJA Thermal Resistance, Junction to Ambient, Max. FCH76N60N Unit 0.23 °C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FCH76N60N FCH76N60N TO−247−3LD Tube N/A N/A 30 Units www.onsemi.com 2 FCH76N60N ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit 600 − − V OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V, TC = 25°C BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25°C − 0.73 − V/°C IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V − − 10 A VDS = 480 V, VGS = 0 V, TC = 125°C − − 100 VGS = ±30 V, VDS = 0 V − − ±100 BVDSS IGSS Gate to Body Leakage Current nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 A 2.0 − 4.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 38 A − 28 36 m Forward Transconductance VDS = 20 V, ID = 38 A − 90 − S VDS = 100 V, VGS = 0 V, f = 1 MHz − 9310 12385 pF − 370 495 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance − 3.1 5 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz − 195 − pF Effective Output Capacitance VDS = 0 V to 380 V, VGS = 0 V − 914 − pF Total Gate Charge at 10 V VDS = 380 V, ID = 38 A, VGS = 10 V (Note 4) − 218 285 nC − 39 − nC − 66 − nC f = 1 MHz − 1.0 −  VDD = 380 V, ID = 38 A, RG = 25  (Note 4) − 34 78 ns − 24 58 ns Coss(eff.) Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G−S) SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn−On Rise Time td(off) Turn-Off Delay Time − 235 480 ns Turn−Off Fall Time − 32 74 ns tf DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain to Source Diode Forward Current − − 76 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 228 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A − − 1.2 V trr Reverse Recovery Time − 612 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 38 A, dIF/dt = 100 A/s − 16 − C IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially Independent of Operating Temperature Typical Characteristics. www.onsemi.com 3 FCH76N60N TYPICAL CHARACTERISTICS 500 VGS = 15.0 V 10.0 V 8.0 V 100 6.0 V 5.5 V 5.0 V 4.5 V ID, Drain Current [A] ID, Drain Current [A] 300 10 100 150°C −55°C *Notes: 1. 250 s Pulse Test 2. TC = 25°C 2 0.1 1 1 10 25°C 10 20 *Notes: 1. VDS = 20 V 2. 250 s Pulse Test 2 Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 400 IS, Reverse Drain Current [A] RDS(ON) [], Drain−Source On−Resistance 50 45 40 VGS = 10 V 35 VGS = 20 V 30 100 150°C *Note: TC = 25°C 0 50 100 150 200 25°C 10 1.0 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 105 VGS, Gate−Source Voltage [V] Coss Capacitance [pF] 0.5 VSD, Body Diode Forward Voltage [V] Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 103 *Notes: 1. VGS = 0 V 2. 250 s Pulse Test 1 0.0 250 ID, Drain Current [A] 104 8 6 VGS, Gate−Source Voltage [V] VDS, Drain−Source Voltage [V] 25 4 Ciss Crss 102 *Notes: 1. VGS = 0 V 2. f = 1 MHz 101 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0 10 0.01 0.1 1 10 100 8 6 4 2 0 600 VDS, Drain−Source Voltage [V] VDS = 120 V VDS = 300 V VDS = 480 V *Note: ID = 38 A 0 60 120 180 240 Qg, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 FCH76N60N TYPICAL CHARACTERISTICS (continued) 3.0 RDS(ON), (Normalized) Drain−Source On−Resistance BVDSS, (Normalized) Drain−Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −100 *Notes: 1. VGS = 0 V 2. ID = 250 A −50 0 50 100 150 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10 V 2. ID = 38 A 0.5 0.0 −100 200 −50 TJ, Junction Temperature [°C] 1000 ID, Drain Current [A] 1 ms 1 0.01 1 10 10 ms DC 100 20 0 1000 25 50 75 100 150 Figure 10. Maximum Drain Current vs. Case Temperature 0.3 0.1 0.5 0.2 0.1 0.05 PDM t1 t2 *Notes: 1. ZJC(t) = 0.21°C/W Max. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZJC(t) 0.02 0.01 Single Pulse 10−4 125 TC, Case Temperature [°C] Figure 9. Maximum Safe Operating Area 0.001 10−5 200 40 VDS, Drain−Source Voltage [V] 0.01 150 60 *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0.1 ZJC(t), Thermal Response [°C/W] ID, Drain Current [A] 100 s Operation in This Area is Limited by RDS(on) 100 80 10 s 10 50 Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 100 0 TJ, Junction Temperature [°C] 10−3 10−2 10−1 100 t1, Rectangular Pulse Duration [sec] Figure 11. Transient Thermal Response Curve www.onsemi.com 5 101 FCH76N60N VGS RL Qg VDS VGS Qgs Qgd DUT IG = const. Charge Figure 12. Gate Charge Test Circuit & Waveform RL VDS VDS 90% VDD VGS RG VGS DUT VGS 10% td(on) td(off) t f tr ton toff Figure 13. Resistive Switching Test Circuit & Waveforms L E AS + 1 LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time FCH76N60N + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPREMOS is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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