FCP11N60

FCP11N60/FCPF11N60 SuperFET FCP11N60/FCPF11N60 General Description SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. TM Features • • • • • 650V @Tj = 150°C Typ. Rds(on)=0.32Ω Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested D ! ● ◀ ▲ ● ● G! GDS TO-220 FCP Series GD S TO-220F FCPF Series ! S Absolute Maximum Ratings Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current TC = 25°C unless otherwise noted Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCP11N60 11 7 33 FCPF11N60 11* 7* 33* ± 30 340 11 12.5 4.5 Units A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 125 1.0 36 0.29 -55 to +150 300 * Drain current limited by maximum junction termperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FCP11N60 1.0 0.5 62.5 FCPF11N60 3.5 -62.5 Units °C/W °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ BVDS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA, TJ = 25°C VGS = 0 V, ID = 250 µA, TJ = 150°C ID = 250 µA, Referenced to 25°C VGS = 0 V, ID = 11 A VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 --------650 0.6 700 --------1 10 100 -100 V V V/°C V µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 5.5 A VDS = 40 V, ID = 5.5 A (Note 4) 3.0 --- -0.32 9.7 5.0 0.38 -- V Ω S Dynamic Characteristics Ciss Coss Crss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 480 V, VGS = 0 V VDS = 25 V, VGS = 0 V, f = 1.0 MHz -----1148 671 63 35 95 1490 870 82 --pF pF pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 11 A, VGS = 10 V (Note 4, 5) VDD = 300 V, ID = 11 A, RG = 25 Ω (Note 4, 5) -------- 34 98 119 56 40 7.2 21 80 205 250 120 52 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 11 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 11 A, dIF / dt = 100 A/µs (Note 4) ------ ---390 5.7 11 33 1.4 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Typical Characteristics 10 2 ID , Drain Current [A] 10 1 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 1 150 C o 10 0 10 0 25 C o -55 C o 10 -1 * Notes : 1. 250 µs Pulse Test o 2. TC = 25 C * Note 1. VDS = 40V 2. 250 µs Pulse Test 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.0 0.8 IDR , Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 10V 0.6 10 1 0.4 VGS = 20V 10 0 150 C o 25 C * Notes : 1. VGS = 0V 2. 250 µs Pulse Test o 0.2 * Note : TJ = 25 C o 0.0 0 5 10 15 20 25 30 35 40 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VDS = 100V 10 5000 VDS = 250V VDS = 400V VGS , Gate-Source Voltage [V] 4000 8 Capacitance [pF] Coss 3000 * Notes : 1. VGS = 0 V 2. f = 1 MHz 6 2000 Ciss 4 1000 Crss 2 * Note : ID = 11A 0 -1 10 0 10 0 10 1 0 5 10 15 20 25 30 35 40 45 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Typical Characteristics (Continued) 1.2 3.0 2.5 BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 2 Operation in This Area is Limited by R DS(on) 10 2 Operation in This Area is Limited by R DS(on) 10 1 100 us 10 1 100 us 1 ms 10 ms 10 ms 10 0 DC ID, Drain Current [A] ID, Drain Current [A] 1 ms 10 0 100 ms DC * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 10 -2 10 0 10 1 10 2 10 3 10 -2 10 0 10 1 10 2 10 3 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FCP11N60 Figure 9-2. Maximum Safe Operating Area for FCPF11N60 12.5 10.0 ID, Drain Current [A] 7.5 5.0 2.5 0.0 25 50 75 100 o 125 150 TC, Case Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature ©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Typical Characteristics (Continued) 10 0 Z (t), T h e rm a l R e s p o n s e D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e * N o te s : o 1 . Z θ J C ( t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) PDM t1 t2 θJ C 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-1. Transient Thermal Response Curve for FCP11N60 Z (t), T h e rm a l R e s p o n s e D = 0 .5 10 0 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 * N o te s : o 1 . Z θ J C ( t) = 3 .5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) PDM t1 s in g le p u ls e θJ C t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FCPF11N60 ©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG DUT tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD tp ID (t) VDS (t) Time 10V ©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Package Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8