FCPF20N60

FCP16N60 / FCPF16N60 600V N-Channel MOSFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on)=0.22 • Ultra low gate charge (typ. Qg=45nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested SuperFETTM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. January 2007 D G GDS TO-220 FCP Series GD S TO-220F FCPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25 C) - Derate above 25 C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25 C) - Continuous (TC = 100 C) - Pulsed (Note 1) FCP16N60 16 10.1 48 FCPF16N60 600 16* 10.1* 48* 30 tbd 16 Unit V A A A V mJ A mJ V/ns 20.8 4.5 167 1.33 -55 to +150 300 37.9 0.3 W W/ C C C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol R R JC JA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FCP16N60 0.75 62.5 FCPF16N60 3.3 62.5 Unit C/W C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP16N60 / FCPF16N60 Rev. A FCP16N60 / FCPF16N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCP16N60 FCPF16N60 Device FCP16N60 FCPF16N60 Package TO-220 TO-220F Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Conditions VGS = 0V, ID = 250 A, TJ = 25 C VGS = 0V, ID = 250 A, TJ = 150 C Min 600 -------- Typ -650 0.6 700 ----- Max Units ----1 10 100 -100 V V V/ C V A A nA nA Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ID = 250 A, Referenced to 25 C VGS = 0V, ID = 16A VDS = 600V, VGS = 0V VDS = 480V, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250 A VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.22 11.5 5.0 0.26 -S V Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 16A RG = 25 -----1610 870 65 45 110 2100 1135 -58 -pF pF pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 16A VGS = 10V (Note 4, 5) (Note 4, 5) -------- 42 95 150 45 50 9.2 25 90 200 320 95 66 12 -- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25 C 3. ISD 16A, di/dt 200A/ s, VDD BVDSS, Starting TJ = 25 C 2% 4. Pulse Test: Pulse width 300 s, Duty Cycle Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS =16A VGS = 0V, IS = 16A dIF/dt =100A/ s (Note 4) ------ ---450 8.2 16 48 1.4 --- A A V ns C 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FCP16N60 / FCPF16N60 Rev. A www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] 10 1 ID , Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 1 150 25 -55 10 0 10 0 Notes : 1. 250 s Pulse Test 2. TC = 25 Note 1. VDS = 40V 2. 250 s Pulse Test 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.4 0.3 VGS = 10V IDR , Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 10 1 0.2 VGS = 20V 0.1 150 10 0 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 10000 9000 8000 7000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V VGS, Gate-Source Voltage [V] 10 VDS = 250V VDS = 400V Capacitance [pF] 8 6000 5000 4000 3000 2000 1000 0 -1 10 Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 6 Ciss 4 Crss 2 Note : ID = 20A 10 0 10 1 0 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FCP16N60 / FCPF16N60 Rev. A www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 1.1 2.0 1.0 1.5 0.9 ? Notes : 1. VGS = 0 V 2. ID = 250 ? A 1.0 Notes : 1. VGS = 10 V 2. ID = 20 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FCP20N60 Operation in This Area is Limited by R DS(on) Figure 9-2. Maximum Safe Operating Area for FCPF20N60 Operation in This Area is Limited by R DS(on) 10 2 10 2 100 us ID, Drain Current [A] 10 1 1 ms 10 ms DC ID, Drain Current [A] 100 us 10 1 1 ms 10 ms 100 ms 10 0 10 0 DC Notes : Notes : 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -2 10 0 10 1 10 2 10 3 10 -2 10 0 10 1 10 2 10 3 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 25 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 o 125 150 TC, Case Temperature [ C] 4 FCP16N60 / FCPF16N60 Rev. A www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FCP20N60 10 0 Z JC Thermal Response (t), D = 0 .5 N o te s : 1 . Z J C = 0 .6 (t) / W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z J C (t) 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 10 -2 PDM t1 s in g le pu ls e t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FCPF20N60 D = 0 .5 (t), Thermal Response 10 0 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 N o te s : 1 . Z J C t) = 3 .2 ( /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) ( JC PDM s in g le p u ls e 10 -2 Z t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 5 FCP16N60 / FCPF16N60 Rev. A www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform 5K 0 1V 2 20F 0n 30F 0n Sm Tp a e ye a DT sU VS D VS G Q g 1V 0 Q g s Q g d VS G DT U 3A m Cag hr e Resistive Switching Test Circuit & Waveforms V D S V G S R G R L V D D V D S 9 0 % 1 0 V D U T V G S 1 0 % t(n d) o t r tn o t(f) df o tf o f t f Unclamped Inductive Switching Test Circuit & Waveforms L V D S I D R G 1 0 V tp BS VS D 1 -- I 2 ---------E =--L S ---------A S A 2 B S- D VS V D D BS VS D IS A V D D I( t D) V D D tp D U T V( Dt S) Te i m 6 FCP16N60 / FCPF16N60 Rev. A www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p 7 FCP16N60 / FCPF16N60 Rev. A www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) ) (45° 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters 8 FCP16N60 / FCPF16N60 Rev. A www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 9 FCP16N60 / FCPF16N60 Rev. A 15.87 ±0.20 www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I22