FDB12N50U

FDB12N50U N-Channel MOSFET March 2008 FDB12N50U N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D D G S TO-263AB FDB Series D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) -Continuous (TC = 25oC) Ratings 500 ±30 10 6 40 456 10 16.5 4.5 165 1.33 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.75 62.5 Units o C/W ©2007 Fairchild Semiconductor Corporation FDB12N50U Rev. A2 1 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDB12N50U Device FDB12N50UTM_WS Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.7 25 250 ±100 V V/oC µA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 5A VDS = 40V, ID = 5A (Note 4) 3.0 - 0.65 11 5.0 0.8 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 10A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5) 1050 140 11 21 6 9 1395 190 17 30 - pF pF pF nC nC nC - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 10A R G = 25 Ω (Note 4, 5) - 35 45 60 35 80 100 130 80 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 12A VGS = 0V, ISD = 12A dIF/dt = 100A/µs (Note 4) - 60 0.1 10 40 1.6 - A A V ns µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 9mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB12N50U Rev. A2 2 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 30 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 30 ID,Drain Current[A] ID,Drain Current[A] 10 10 150 C 25 C o o *Notes: 1. 250µs Pulse Test 1 2. TC = 25 C o 1 10 VDS,Drain-Source Voltage[V] 20 1 4.0 *Notes: 1. VDS = 20V 2. 250µs Pulse Test 4.5 5.0 5.5 6.0 6.5 VGS,Gate-Source Voltage[V] 7.0 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1.4 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 1.2 150 C o o 1.0 VGS = 10V 10 25 C 0.8 VGS = 20V 0.6 0 5 10 15 ID, Drain Current [A] 20 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 25 1 0.0 2. 250µs Pulse Test 0.5 1.0 1.5 2.0 VSD, Body Diode Forward Voltage [V] 2.5 Figure 5. Capacitance Characteristics 2000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 100V VDS = 250V VDS = 400V 1500 Capacitances [pF] Ciss 8 *Note: 1. VGS = 0V 2. f = 1MHz 6 1000 Coss 4 500 Crss 2 *Note: ID = 10A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 5 10 15 20 Qg, Total Gate Charge [nC] 25 FDB12N50U Rev. A2 3 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. Maximum Safe Operating Area 100 20µs ID, Drain Current [A] 100µs 1.1 10 1ms 10ms DC 1.0 1 Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.1 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 12 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve 1 Thermal Response [ZθJC] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 t2 o 0.01 Single pulse *Notes: 1. ZθJC(t) = 0.75 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 1E-3 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDB12N50U Rev. A2 4 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB12N50U Rev. A2 5 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDB12N50U Rev. A2 6 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Mechanical Dimensions Dimensions in Millimeters FDB12N50U Rev. A2 7 www.fairchildsemi.com FDB12N50U N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * tm FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDB12N50U Rev. A2 8 www.fairchildsemi.com