FDD3860_08

FDD3860 N-Channel PowerTrench® MOSFET October 2008 FDD3860 N-Channel PowerTrench® MOSFET 100V, 29A, 36mΩ Features Max rDS(on) = 36mΩ at VGS = 10V, ID = 5.9A High performance trench technology for extremely low rDS(on) 100% UIL tested RoHS Compliant tm General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications DC-AC Conversion Synchronous Rectifier D D G S G D -PA52 TO -2 K ( TO -252 ) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TA = 25°C (Note 1a) Ratings 100 ±20 29 6.2 60 121 69 3.1 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.8 40 °C/W Package Marking and Ordering Information Device Marking FDD3860 Device FDD3860 Package D-PAK (TO-252) Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 1 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V 100 98 1 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 5.9A VGS = 10V, ID = 5.9A, TJ = 125°C VDS = 10V, ID = 5.9A 2.5 3.8 -11.4 29 51 20 36 64 4.5 V mV/°C mΩ S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50V, VGS = 0V, f = 1MHz f = 1MHz 1310 100 45 1.6 1740 130 70 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Charge Gate to Drain “Miller” Charge VDD = 50V, ID = 5.9A VDD = 50V, ID = 5.9A, VGS = 10V, RGEN = 6Ω 16 10 24 7 22 7.1 6.3 29 21 39 15 31 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.0A VGS = 0V, IS = 5.9A (Note 2) (Note 2) 0.7 0.8 34 40 1.2 1.3 55 64 V ns nC IF = 5.9A, di/dt = 100A/µs Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40°C/W when mounted on a 1 in2 pad of 2 oz copper b) 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V. ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 2 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 60 ID, DRAIN CURRENT (A) 3.0 VGS = 10V VGS = 8V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 40 30 20 10 0 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 7V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 2.5 2.0 1.5 1.0 0.5 0 10 VGS = 6V VGS = 7V VGS = 8V VGS = 10V VGS = 6V 1 2 3 4 5 20 30 40 50 60 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 100 SOURCE ON-RESISTANCE (mΩ) 2.2 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 ID = 5.9A VGS = 10V ID = 5.9A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 80 60 40 20 0 TJ = 25oC rDS(on), DRAIN TO TJ = 125oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 60 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 50 ID, DRAIN CURRENT (A) VDS = 10V 10 1 0.1 0.01 1E-3 0.0 TJ = 150oC 40 30 TJ = 150oC TJ = 25oC TJ = -55oC 20 TJ = 25oC 10 TJ = -55oC 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 3 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 5.9A VDD = 25V 3000 8 6 4 2 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 1000 VDD = 50V Ciss CAPACITANCE (pF) VDD = 75V Coss 100 Crss f = 1MHz VGS = 0V 10 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 35 ID, DRAIN CURRENT (A) 10 8 IAS, AVALANCHE CURRENT(A) 6 4 TJ = 125oC TJ = 25oC 28 VGS = 10V 21 14 RθJC = 1.8 C/W o 2 7 0 25 1 0.01 0.1 1 10 100 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10 5 VGS = 10V ID, DRAIN CURRENT (A) 10 4 10 100us SINGLE PULSE 10 3 RθJC = 1.8 C/W o 1 THIS AREA IS LIMITED BY rds(on) SINGLE PULSE TJ = MAX RATED RθJC = 1.8 C/W TC = 25oC o 1ms 10ms DC 10 2 0.1 0.1 1 10 100 300 10 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 4 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 FOR TEMPERATURES ABOVE 25oC DERATE PEAK PDM CURRENT AS FOLLOWS: 150 – T C I = I -----------------------25 t1 125 t2 TC = 25oC NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 SINGLE PULSE RθJC = 1.8 C/W o 0.001 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RθJA = 40 C/W (Note 1a) o PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 RθJA = 96 C/W (Note 1b) o 0.0001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 15. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 5 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I37 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 6 www.fairchildsemi.com