FDMC2674

FDMC2674 N-Channel UltraFET Trench® MOSFET May 2006 FDMC2674 N-Channel UltraFET Trench® MOSFET 220V, 1A, 366mΩ Features General Description Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A Typ Qg = 12.7nC at VGS = 10V Low Miller charge Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability ( Single Pulse and Repetitive Pulse) RoHS Compliant tm UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Applications DC/DC converters and Off-Line UPS Distributed Power Architectures Bottom 5 6 7 8 D 1 D D D Top 5 6 S G 4 3 2 1 4 3 2 7 8 S S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Operating and Storage Temperature Ratings 220 ±20 1 13.8 (Note 3) 13 2.4 -55 to 150 Units V V A mJ W °C Thermal Characteristics RθJA RθJA Thermal Resistance , Junction to Ambient Thermal Resistance , Junction to Ambient (Note 1a) (Note 1b) 52 108 °C/W °C/W Package Marking and Ordering Information Device Marking FDMC2674 Device FDMC2674 Package MLP 3.3 x 3.3 1 Reel Size 7’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com ©2006 Fairchild Semiconductor Corporation FDMC2674 Rev. E FDMC2674 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 176V, VGS = 0V VGS = ±20V, 220 24 8 1 ±100 V mV/°C µA nA On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 1A VGS = 10V, ID = 1A, TJ =150oC 2 3.4 -10.2 305 678 366 814 mΩ 4 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =100V, VGS = 0V, f = 1MHz 880 70 11 1180 95 20 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain Charge VDD = 15V, VGS = 10V, ID = 1A, IG = 1.0mA VDD = 100V, ID = 1A VGS = 10V, RGS = 2.4Ω 9 13 15 21 12.7 3.8 2. 9 18 23 27 34 18 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = 1A Reverse Recovery Time Reverse Recovery Charge IF = 1A, di/dt = 100A/µs IF = 1A, di/dt = 100A/µs 0.8 1.5 60 109 V ns nC Notes: 1: RθJA is determined with the device mounted on a 1in2 oz.copper pad on a 1.5x1.5 in board of FR-4 material .RθJC are guaranteed by design while RθJA is determined by the user’s board design. a. 52°C/W when mounted on a 1 in2 pad of 2 oz copper b. 108°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test:Pulse Width < 300µs, Duty Cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 50V, VGS = 10V. 2 FDMC2674 Rev. E www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS = 10V ID, DRAIN CURRENT (A) 2.5 2.0 1.5 1.0 0.5 0.0 0.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 7V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 1.6 VGS = 4.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 5.0V 1.4 VGS = 5V 1.2 VGS = 7V VGS = 4.5V 1.0 VGS = 10V 0.6 1.2 1.8 2.4 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 0.8 0.5 1.0 1.5 2.0 2.5 3.0 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.0 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (Ω) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.4 2.0 1.6 1.2 0.8 0.4 -80 ID = 1A VGS = 10V ID = 1A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0.8 TJ = 150oC 0.6 0.4 TJ = 25oC -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 0.2 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 4 Figure 4. On-Resistance vs Gate to Source Voltage 100 ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 1E-3 0.0 TJ = -55oC 3 2 TJ = 150oC TJ = 150oC TJ = 25oC 1 TJ = 25oC TJ = -55oC 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 0.3 0.6 0.9 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDMC2674 Rev. E www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 100V 4000 1000 CAPACITANCE (pF) Ciss 8 6 ID = 1A Coss 100 4 2 0 10 f = 1MHz VGS = 0V Crss 0 3 6 9 Qg, GATE CHARGE(nC) 12 15 1 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 5 IAS, AVALANCHE CURRENT(A) Figure 8. Capacitance vs Drain to Source Voltage 2.0 ID, DRAIN CURRENT (A) 1.5 VGS = 10V 1 TJ = 25oC TJ = 125oC 1.0 0.5 RθJA = 52oC/W 0.1 -2 10 10 10 10 tAV, TIME IN AVALANCHE(ms) -1 0 1 10 2 0.0 25 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 Figure 9. Unclamped Inductive Switching Capability 100 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 3000 P(PK), PEAK TRANSIENT POWER (W) 10 1 0.1 0.01 1E-3 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) SINGLE PULSE TJ=MAX RATED TA=25oC 10us 100us 1ms 10ms 100ms 1s 10s DC 1000 VGS = 10V TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 I = I25 150 – T A ----------------------125 10 SINGLE PULSE 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 1 -5 10 10 -4 10 -3 10 10 10 t, PULSE WIDTH (s) -2 -1 0 10 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 FDMC2674 Rev. E www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -2 -1 0 1E-3 -5 10 10 -4 10 -3 10 10 10 t, RECTANGULAR PULSE DURATION(s) 10 1 10 2 10 3 Figure 13. Transient Thermal Response Curve 5 FDMC2674 Rev. E www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FDMC2674 N-Channel UltraFET Trench® MOSFET ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ DISCLAIMER ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 Preliminary No Identification Needed Full Production Obsolete Not In Production 6 FDMC2674 Rev.E www.fairchildsemi.com