FDMC2674_07

FDMC2674 N-Channel UltraFET Trench MOSFET January 2007 FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features General Description Max rDS(on) = 366mΩ at VGS = 10V, ID = 1.0A Typ Qg = 12.7nC at VGS = 10V Low Miller charge Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability ( Single Pulse and Repetitive Pulse) RoHS Compliant tm UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application DC/DC converters and Off-Line UPS Distributed Power Architectures Bottom Top 5 6 7 8 D 1 D D D D D D 5 6 7 8 4G 3S 2S 1S 4 3 2 S S S G D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC= 25°C TA = 25°C (Note 1b) Ratings 220 ±20 7.0 1.0 13.8 42 2.1 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 3.0 60 °C/W Package Marking and Ordering Information Device Marking FDMC2674 Device FDMC2674 Package Power 33 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMC2674 Rev.F 1 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V ID = 250μA, referenced to 25°C VDS = 176V, VGS = 0V VGS = ±20V, VDS = 0V 220 248 1 ±100 V mV/°C μA nA On Characteristics VGS(th) ΔVGS(th) ΔTJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 250μA, referenced to 25°C VGS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A , TJ = 150°C 2 3.4 -10.2 305 678 366 814 4 V mV/°C mΩ Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 100V, VGS = 0V, f = 1MHz 880 70 11 1180 95 20 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VDD = 15V ID = 1.0A VDD = 100V, ID = 1.0A VGS = 10V, RGEN = 2.4Ω 9 13 15 21 12.7 3.8 2.9 18 23 27 34 18 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) 0.8 1.5 60 109 V ns nC IF = 1.0A, di/dt = 100A/μs Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB. (b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper b. 135°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDMC2674 Rev.F 2 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 ID, DRAIN CURRENT (A) 1.6 VGS = 4.5V 2.5 2.0 1.5 1.0 0.5 0.0 0.0 VGS = 10V VGS = 7V VGS = 5V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 1.4 VGS = 5.0V 1.2 VGS = 7V VGS = 4.5V 1.0 VGS = 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0.5 1.0 1.5 0.8 0.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.0 1.5 2.0 ID, DRAIN CURRENT(A) 2.5 3.0 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.8 RDS(on), DRAIN TO SOURCE ON-RESISTANCE (Ω) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.4 2.0 1.6 1.2 0.8 0.4 -50 ID = 1A VGS = 10V ID = 1A 0.7 0.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX TJ = 150oC 0.5 0.4 0.3 TJ = 25oC 0.2 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 4 8 12 16 VGS, GATE TO SOURCE VOLTAGE (V) 20 Figure 3. Normalized On- Resistance vs Junction Temperature 4 ID, DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 20 10 VGS = 0V 3 VDD = 5V 1 TJ = 150oC 2 TJ = 150oC 0.1 0.01 TJ = 25oC 1 TJ = 25oC TJ = -55oC 1E-3 1E-4 0.0 TJ = -55oC 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 0.3 0.6 0.9 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC2674 Rev.F 3 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 1A 2000 1000 CAPACITANCE (pF) Ciss 8 VDD = 100V 6 4 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 15 100 Coss f = 1MHz VGS = 0V 10 5 0.1 Crss 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 ID, DRAIN CURRENT (A) 2 IAS, AVALANCHE CURRENT(A) 10 rDS(on) LIMITED 1 100us 1 1ms 10ms TJ = 25oC 0.1 SINGLE PULSE TJ = MAX RATED 100ms 1s 10s DC TJ = 125oC 0.01 RθJA = 135oC/W TA = 25oC 0.1 0.01 0.1 1 10 100 1E-3 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE(ms) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 500 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Forward Bias Safe Operating Area 100 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A ----------------------125 10 I = I25 SINGLE PULSE 1 0.5 -4 10 RθJA = 135 C/W o 10 -3 10 -2 10 t, PULSE WIDTH (s) -1 10 0 10 1 10 2 10 3 Figure 11. Single Pulse Maximum Power Dissipation FDMC2674 Rev.F 4 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -1 0 1 2 3 0.01 SINGLE PULSE RθJA = 135 C/W o 1E-3 -4 10 10 -3 10 -2 10 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMC2674 Rev.F 5 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET FDMC2674 Rev.F 6 www.fairchildsemi.com FDMC2674 N-Channel UItraFET Trench MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I22 FDMC2674 Rev. F 7 www.fairchildsemi.com