FDMC86102

FDMC86102 N-Channel Power Trench® MOSFET July 2009 FDMC86102 N-Channel Power Trench® MOSFET 100 V, 20 A, 24 mΩ Features Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC - DC Conversion Top Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 20 29 7 30 72 41 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 °C/W Package Marking and Ordering Information Device Marking FDMC86102 Device FDMC86102 Package Power 33 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation FDMC86102 Rev.C 1 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 100 69 1 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 7 A VGS = 6 V, ID = 5 A VGS = 10 V, ID = 7 A, TJ = 125 °C VDD = 10 V, ID = 7 A 2.0 3.1 -9 19.4 26.8 32.8 19 24 38 41 S mΩ 4.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 725 175 15 0.5 965 235 25 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V ID = 7 A VDD = 50 V, ID = 7 A, VGS = 10 V, RGEN = 6 Ω 8 4 14 4 13 8 3.7 3.6 17 10 25 10 18 11 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 7 A VGS = 0 V, IS = 2 A IF = 7 A, di/dt = 100 A/µs (Note 2) (Note 2) 0.81 0.75 44 40 1.3 1.2 70 65 V ns nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %. 3. Starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 12 A, VDD = 90 V, VGS = 10 V. FDMC86102 Rev.C 2 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 25 ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 5.5 V VGS = 10 V VGS = 6 V VGS = 5 V 5 VGS = 4.5 V 4 VGS = 5 V 20 15 10 5 0 0.0 3 VGS = 5.5 V 2 VGS = 6 V VGS = 4.5 V 1 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10 V 0.5 1.0 1.5 2.0 2.5 3.0 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 80 SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 7 A VGS = 10 V 70 60 50 ID = 7 A rDS(on), DRAIN TO TJ = 125 oC 40 30 20 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 10 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 30 25 ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 60 IS, REVERSE DRAIN CURRENT (A) VGS = 0 V 10 TJ = 150 oC TJ = 25 oC VDS = 5 V 20 15 TJ = 150 oC 1 0.1 10 TJ = 25 oC 5 TJ = -55 oC 0.01 TJ = -55 oC 0 2 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC86102 Rev.C 3 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 7 A VDD = 50 V 1000 Ciss CAPACITANCE (pF) 8 VDD = 25 V VDD = 75 V 6 4 2 Coss 100 f = 1 MHz VGS = 0 V Crss 0 0 2 4 6 8 10 12 14 Qg, GATE CHARGE (nC) 10 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 9 8 7 6 5 4 3 2 25 20 Limited by Package VGS = 10 V VGS = 6 V TJ = 25 oC 15 10 5 RθJC = 3 C/W o TJ = 100 oC TJ = 125 oC 1 0.01 0.1 1 10 30 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 50 10 100 µs 1 ms Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = 10 V ID, DRAIN CURRENT (A) 100 1 THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms 1s 10 s DC 10 SINGLE PULSE RθJA = 125 oC/W 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC 1 0.01 0.01 TA = 25 oC 0.1 1 10 100 500 0.5 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMC86102 Rev.C 4 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE RθJA = 125 C/W o t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -2 0.001 -4 10 10 -3 10 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC86102 Rev.C 5 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMC86102 Rev.C 6 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench® Auto-SPM™ F-PFS™ The Power Franchise® PowerXS™ Build it Now™ FRFET® ® Global Power ResourceSM Programmable Active Droop™ CorePLUS™ Green FPS™ QFET® CorePOWER™ TinyBoost™ QS™ Green FPS™ e-Series™ CROSSVOLT™ TinyBuck™ Quiet Series™ CTL™ Gmax™ TinyLogic® RapidConfigure™ Current Transfer Logic™ GTO™ TINYOPTO™ EcoSPARK® IntelliMAX™ TinyPower™ EfficentMax™ ISOPLANAR™ ™ TinyPWM™ Saving our world, 1mW /W /kW at a time™ EZSWITCH™ * MegaBuck™ TinyWire™ ™* SmartMax™ MICROCOUPLER™ TriFault Detect™ SMART START™ MicroFET™ TRUECURRENT™* SPM® MicroPak™ ® µSerDes™ STEALTH™ MillerDrive™ ® Fairchild SuperFET™ MotionMax™ ® Fairchild Semiconductor SuperSOT™-3 Motion-SPM™ FACT Quiet Series™ SuperSOT™-6 UHC® OPTOLOGIC® ® FACT OPTOPLANAR® Ultra FRFET™ SuperSOT™-8 ® ® FAST UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ PDP SPM™ ® FlashWriter * XS™ ®* Power-SPM™ FPS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMC86102 Rev.C 7 www.fairchildsemi.com