FDD86102

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. „ Shielded Gate MOSFET Technology „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package Application „ Very low Qg and Qgd compared to competing trench technologies „ DC - DC Conversion „ Fast switching speed „ 100% UIL tested „ RoHS Compliant D D G G S D -P-2A52 K TO (T O -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Ratings 100 Units V ±20 V 36 (Note 1a) 8 (Note 4) 75 (Note 3) 121 62 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.0 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD86102 Device FDD86102 ©2012 Fairchild Semiconductor Corporation FDD86102 Rev.1.9 Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units www.fairchildsemi.com FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 67 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 3.1 -8.5 mV/°C VGS = 10 V, ID = 8 A 19 24 VGS = 6 V, ID = 6 A 26 38 VGS = 10 V, ID = 8 A, TJ = 125 °C 33 44 VDS = 10 V, ID = 8 A 21 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 780 1035 pF 180 240 pF 15 25 pF Ω 0.4 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V, ID = 8 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 8 A 7.6 15 ns 3 10 ns 13.4 24 ns 2.9 10 ns 13.4 19 nC 7.6 11 nC 4.0 nC 3.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 2.6 A (Note 2) 0.7 1.2 43 68 ns 43 68 nC IF = 8 A, di/dt = 100 A/μs V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 96 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS 121 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 9 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 30 A. 4. Pulsed Drain current is tested at 300 μs with 2% duty cycle. For repetitive pulses, the pulse width is limited by the maximum junction temperature. ©2012 Fairchild Semiconductor Corporation FDD86102 Rev.1.9 2 www.fairchildsemi.com FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 75 VGS = 7 V ID, DRAIN CURRENT (A) 60 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 45 VGS = 6 V 30 15 VGS = 5 V 0 0 1 2 3 4 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 8 V VGS = 10 V VGS = 5 V 3 VGS = 6 V 2 VGS = 7 V 1 0 5 0 15 30 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 50 TJ = 125 oC 40 30 TJ = 25 oC 20 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 75 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 ID, DRAIN CURRENT (A) ID = 8 A 70 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature VDS = 5 V 45 30 TJ = 150 oC 15 0 75 80 ID = 8 A VGS = 10 V -50 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 0.6 -75 45 VGS = 10 V ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.8 VGS = 8 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = 25 oC TJ = -55 oC 2 4 6 8 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.2 10 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDD86102 Rev.1.9 3 1.4 www.fairchildsemi.com FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 8 A Ciss VDD = 25 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 75 V 4 Coss 100 2 0 0 3 6 9 12 10 0.1 15 f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics 10 100 Figure 8. Capacitance vs Drain to Source Voltage 40 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 30 VGS = 10 V 20 VGS = 6 V 10 o RθJC = 2 C/W 1 0.001 0.01 0.1 1 10 0 25 30 50 100 125 150 Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 P(PK), PEAK TRANSIENT POWER (W) 10000 10 100 µs THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1 1 ms RθJC = 2 oC/W 10 ms DC TC = 25 oC 0.1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 1 10 100 TC = 25 oC 1000 100 50 -5 10 200 -4 10 -3 10 -2 10 -1 10 1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDD86102 Rev.1.9 SINGLE PULSE RθJC = 2 oC/W 4 www.fairchildsemi.com FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 2 C/W 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDD86102 Rev.1.9 5 www.fairchildsemi.com FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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