FDT86102LZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features General Description „ Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. „ Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies Applications „ Fast switching speed „ DC-DC conversion „ 100% UIL Tested „ Inverter „ RoHS Compliant „ Synchronous Rectifier D S D SOT-223 G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Ratings 100 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 6.6 ID Parameter -Pulsed 40 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) 84 Power Dissipation TA = 25 °C (Note 1a) 2.2 Power Dissipation TA = 25 °C (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 12 (Note 1a) 55 °C/W Package Marking and Ordering Information Device Marking 86102LZ Device FDT86102LZ ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev. C Package SOT-223 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 3.0 V 100 V 70 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.4 -6 mV/°C VGS = 10 V, ID = 6.6 A 22 28 VGS = 4.5 V, ID = 5.5 A 27 38 VGS = 10 V, ID = 6.6 A, TJ = 125 °C 36 46 VDS = 5 V, ID = 6.6 A 26 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1MHz 1118 1490 pF 181 245 pF 7.5 15 pF Ω 0.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge 6.6 14 ns 1.9 10 ns 19 31 ns 2.2 10 ns VGS = 0 V to 10 V 17 25 nC VGS = 0 V to 4.5 V VDD = 50 V, ID = 6.6 A 8.3 12 VDD = 50 V, ID = 6.6 A, VGS = 10 V, RGEN = 6 Ω 2.6 nC 2.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 6.6 A (Note 2) 0.82 1.3 VGS = 0 V, IS = 1 A (Note 2) 0.68 1.2 40 64 ns 36 58 nC IF = 6.6 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 55 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 118 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 90 V, VGS = 10 V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev. C 2 www.fairchildsemi.com FDT86102LZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V VGS = 4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 VGS = 3.5 V 30 VGS = 3 V 20 10 VGS = 2.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 2.5 V 4 VGS = 3 V 3 VGS = 3.5 V 2 1 0 5 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 150 ID = 6.6 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 ID = 6.6 A 90 60 TJ = 125 oC 30 TJ = 25 oC 0 100 125 150 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 120 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On-Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 40 IS, REVERSE DRAIN CURRENT (A) 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 20 VGS = 10 V ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 30 VDS = 5 V 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 1 2 3 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev. C VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDT86102LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = 6.6 A 1000 VDD = 25 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 4 VDD = 75 V 100 Coss 10 2 Crss f = 1 MHz VGS = 0 V 0 0 3 6 9 12 15 1 0.1 18 1 Figure 7. Gate Charge Characteristics 15 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.1 12 VGS = 10 V 9 Package Limited VGS = 4.5 V 6 3 o RθJC = 12 C/W 1 10 0 25 100 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature -1 50 10 VGS = 0 V -2 10 100 μs ID, DRAIN CURRENT (A) Ig, GATE LEAKAGE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 20 -3 10 -4 TJ = 125 oC 10 -5 10 -6 TJ = 25 oC 10 -7 10 10 1 ms 1 0.1 0.01 0.005 0.01 -9 0 5 10 15 20 25 30 35 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 118 oC/W 10 s TA = 25 oC DC 1 10 100 500 VDS, DRAIN to SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev. C 10 ms THIS AREA IS LIMITED BY rDS(on) -8 10 10 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDT86102LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 P(PK), PEAK TRANSIENT POWER (W) 1000 100 10 SINGLE PULSE o RθJA = 118 C/W o TA = 25 C 1 0.5 -4 10 -3 -2 10 -1 10 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 118 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev. C 5 www.fairchildsemi.com FDT86102LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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