FDT86106LZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. „ Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A „ Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package Application „ HBM ESD protection level > 3 KV typical (Note 4) „ DC - DC Conversion „ 100% UIL tested „ RoHS Compliant D S D SOT-223 G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Units V ±20 V 3.2 12 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) 12 Power Dissipation TA = 25 °C (Note 1a) 2.2 Power Dissipation TA = 25 °C (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 12 (Note 1a) 55 °C/W Package Marking and Ordering Information Device Marking 86106LZ Device FDT86106LZ ©2013 Fairchild Semiconductor Corporation FDT86106LZ Rev.C2 Package SOT-223 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 4000 units www.fairchildsemi.com FDT86106LZ N-Channel PowerTrench® MOSFET January 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 2.2 V 100 V 71 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.0 1.5 -5 mV/°C VGS = 10 V, ID = 3.2 A 80 108 VGS = 4.5 V, ID = 2.7 A 100 153 VGS = 10 V, ID = 3.2 A, TJ = 125 °C 140 189 VDS = 10 V, ID = 3.2 A 8 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz 234 315 pF 46 65 pF 3.1 5 pF 3.8 10 ns 1.3 10 ns 10 20 ns 1.5 10 ns 4.3 7 nC 2.4 4 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 3.2 A, VGS = 10 V, RGEN = 6 Ω VDD = 50 V, ID = 3.2 A nC 0.7 nC 0.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.2 A (Note 2) 0.86 1.3 VGS = 0 V, IS = 1 A (Note 2) 0.77 1.2 IF = 3.2 A, di/dt = 100 A/μs V 31 49 ns 21 34 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 55 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 118 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 1 mH, IAS = 5 A, VDD = 90 V, VGS = 10 V. 4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDT86106LZ Rev.C2 2 www.fairchildsemi.com FDT86106LZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V VGS = 4.5 V VGS = 4 V 9 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 12 VGS = 3.5 V 6 VGS = 3 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 3 V 4 VGS = 3.5 V 3 VGS = 4 V 2 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 500 ID = 3.2 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V TJ = 150 oC 6 TJ = 25 oC 3 TJ = -55 oC 2 3 4 400 300 200 TJ = 125 oC 100 TJ = 25 oC 2 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) 12 9 ID = 3.2 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 6 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0 VGS = 10 V VGS = 4.5 V 20 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.2 5 VGS = 0 V 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDT86106LZ Rev.C2 3 1.2 www.fairchildsemi.com FDT86106LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 400 ID = 3.2 A Ciss 8 100 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 25 V VDD = 75 V 4 Coss 10 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 5 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -1 10 7 6 5 TJ = 25 oC 4 TJ = 100 oC 3 TJ 2 -2 = 125 oC VDS = 0 V 10 Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) Crss 1 0.1 -3 10 -4 10 TJ = 125 oC -5 10 -6 10 TJ = 25 oC -7 10 -8 10 -9 10 -10 1 0.01 0.1 1 10 2 0 5 tAV, TIME IN AVALANCHE (ms) 10 15 20 25 30 35 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 20 8 6 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 VGS = 10 V 4 Limited by package VGS = 4.5 V 2 100 us 1 1 ms THIS AREA IS LIMITED BY rDS(on) 0.1 RθJC = 12 C/W 50 1s 10 s TA = 25 oC 75 100 125 0.01 0.1 150 o 1 DC 10 100 400 VDS, DRAIN to SOURCE VOLTAGE (V) TC, CASE TEMPERATURE ( C) Figure 11. Maximum Continuous Drain Current vs Case Temperature FDT86106LZ Rev.C2 SINGLE PULSE TJ = MAX RATED RθJA = 118 oC/W o 0 25 10 ms 100 ms Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDT86106LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 300 100 10 SINGLE PULSE o RθJA = 118 C/W 1 o TA = 25 C 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 118 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve FDT86106LZ Rev.C2 5 www.fairchildsemi.com FDT86106LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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