FDPF33N25

FDP33N25 / FDPF33N25 250V N-Channel MOSFET UniFET FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features • • • • • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching Improved dv/dt capability April 2007 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP33N25 33 20.4 132 FDPF33N25 250 33* 20.4* 132* Unit V A A A V mJ A mJ V/ns ± 30 918 33 23.5 4.5 235 1.89 -55 to +150 300 37 0.29 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP33N25 0.53 0.5 62.5 FDPF33N25 3.4 -62.5 Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP33N25 / FDPF33N25 Rev. B FDP33N25 / FDPF33N25 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP33N25 FDPF33N25 Device FDP33N25 FDPF33N25 Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA, TJ = 25°C ID = 250μA, Referenced to 25°C VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 16.5A VDS = 40V, ID = 16.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 250 -----3.0 ------ Typ -0.25 -----0.077 26.6 1640 330 39 35 230 75 120 36.8 10 17 ---220 1.71 Max Units --1 10 100 -100 5.0 0.094 -2135 430 59 80 470 160 250 48 --33 132 1.4 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns μC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 125V, ID = 33A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 200V, ID = 33A VGS = 10V ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 33A VGS = 0V, IS = 33A dIF/dt =100A/μs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 33A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP33N25 / FDPF33N25 Rev. B 2 www.fairchildsemi.com FDP33N25 / FDPF33N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 2 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A] 10 1 150 C 25 C -55 C * Notes : 1. VDS = 40V 2. 250μs Pulse Test o o o 10 0 * Notes : 1. 250μs Pulse Test 2. TC = 25 C o 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.25 10 2 RDS(ON) [Ω], Drain-Source On-Resistance VGS = 10V 0.15 IDR, Reverse Drain Current [A] 0.20 10 1 0.10 150 C 25 C o o VGS = 20V 0.05 * Note : TJ = 25 C o * Notes : 1. VGS = 0V 2. 250μs Pulse Test 0.00 0 20 40 60 80 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 10 VDS = 50V VDS = 125V VDS = 200V 3000 Coss Ciss VGS, Gate-Source Voltage [V] 8 Capacitances [pF] 2000 6 4 1000 Crss * Note : 1. VGS = 0 V 2. f = 1 MHz 2 * Note : ID = 33A 0 -1 10 0 10 0 10 1 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDP33N25 / FDPF33N25 Rev. B 3 www.fairchildsemi.com FDP33N25 / FDPF33N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 16.5 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 μA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FDP33N25 Figure 9-2. Maximum Safe Operating Area for FDPF33N25 10 2 10 μs 100 μs 1 ms 10 2 10 μs 100 μs 1 ms ID, Drain Current [A] 10 1 Operation in This Area is Limited by R DS(on) DC 10 ms 100 ms ID, Drain Current [A] 10 1 10 ms 100 ms Operation in This Area is Limited by R DS(on) DC 10 0 10 0 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o * Notes : o 1. TC = 25 C 2. TJ = 150 C o 10 -1 10 0 10 1 10 2 10 -1 3. Single Pulse 0 10 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 40 30 ID, Drain Current [A] 20 10 0 25 50 75 100 o 125 150 TC, Case Temperature [ C] FDP33N25 / FDPF33N25 Rev. B 4 www.fairchildsemi.com FDP33N25 / FDPF33N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FDP33N25 10 0 ZθJC(t), Thermal Response D=0.5 10 -1 0.2 0.1 0.05 0.02 0.01 single pulse PDM t1 * Notes : 1. Z θJC(t) = 0.53 C/W Max. 2. Duty Factor, D=t1/t2 3. T JM - T C = PDM * Z θJC(t) o t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FDPF33N25 D=0.5 ZθJC(t), Thermal Response 10 0 0.2 0.1 0.05 10 -1 PDM t1 * Notes : 1. Z θ JC (t) = 3.4 C/W Max. 2. Duty Factor, D=t1/t 2 o 0.02 0.01 t2 10 -2 single pulse 3 . T JM - T C = P DM * Z θ JC (t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1, Square W ave Pulse Duration [sec] FDP33N25 / FDPF33N25 Rev. B 5 www.fairchildsemi.com FDP33N25 / FDPF33N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP33N25 / FDPF33N25 Rev. B 6 www.fairchildsemi.com FDP33N25 / FDPF33N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP33N25 / FDPF33N25 Rev. B 7 www.fairchildsemi.com FDP33N25 / FDPF33N25 250V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FDP33N25 / FDPF33N25 Rev. B 8 www.fairchildsemi.com FDP33N25 / FDPF33N25 250V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 2.54TYP [2.54 ±0.20] 4.70 ±0.20 0.50 –0.05 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FDP33N25 / FDPF33N25 Rev. B 9 15.87 ±0.20 www.fairchildsemi.com FDP33N25 / FDPF33N25 250V N-Channel MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I26 No Identification Needed Full Production Obsolete Not In Production 10 10 FDP33N25 / FDPF33N25 Rev. B www.fairchildsemi.com