FDP44N25 / FDPF44N25 250V N-Channel MOSFET
UniFET
FDP44N25 / FDPF44N25
250V N-Channel MOSFET
Features
• • • • • 44A, 250V, RDS(on) = 0.069Ω @VGS = 10 V Low gate charge ( typical 47 nC) Low Crss ( typical 60 pF) Fast switching Improved dv/dt capability
April 2007
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDP44N25
44 26.4 176
FDPF44N25
250 44* 26.4* 176*
Unit
V A A A V mJ A mJ V/ns
± 30 2055 44 30.7 4.5 307 2.45 -55 to +150 300 38 0.3
W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FDP44N25
0.41 0.5 62.5
FDPF44N25
3.3 -62.5
Unit
°C/W °C/W °C/W
©2007 Fairchild Semiconductor Corporation
1
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FDP44N25 / FDPF44N25 Rev. B
FDP44N25 / FDPF44N25 250V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP44N25 FDPF44N25
Device
FDP44N25 FDPF44N25
Package
TO-220 TO-220F
TC = 25°C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250μA, TJ = 25°C ID = 250μA, Referenced to 25°C VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 22A VDS = 40V, ID = 22A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
250 -----3.0 ------
Typ
-0.25 -----0.058 32 2210 450 60 53 402 85 112 47 18 24 ---195 1.8
Max Units
--1 10 100 -100 5.0 0.069 -2870 585 90 117 814 179 234 61 --44 176 1.4 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns μC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 125V, ID = 44A RG = 25Ω
(Note 4, 5)
------(Note 4, 5)
VDS = 200V, ID = 44A VGS = 10V
------
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 44A VGS = 0V, IS = 44A dIF/dt =100A/μs
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 44A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP44N25 / FDPF44N25 Rev. B
2
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FDP44N25 / FDPF44N25 250V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
2
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
10
2
ID, Drain Current [A]
ID, Drain Current [A]
10
1
150 C
10
1
o
25 C -55 C
o
o
10
0
* Notes : 1. 250μs Pulse Test 2. TC = 25 C
o
* Notes : 1. VDS = 40V 2. 250μs Pulse Test
10
-1
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.10
RDS(ON) [Ω], Drain-Source On-Resistance
0.08
0.06
VGS = 10V
IDR, Reverse Drain Current [A]
10
2
10
1
150 C
o
25 C
o
VGS = 20V
0.04
* Note : TJ = 25 C
o
* Notes : 1. VGS = 0V 2. 250μs Pulse Test
0
25
50
75
100
125
150
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
6000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
Figure 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
5000
Crss = Cgd
10
VDS = 50V VDS = 125V VDS = 200V
Capacitances [pF]
4000
8
Coss Ciss
3000
6
2000
4
1000
Crss
* Note : 1. VGS = 0 V 2. f = 1 MHz
2
* Note : ID = 44A
0 -1 10
0
10
0
10
1
0
10
20
30
40
50
60
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP44N25 / FDPF44N25 Rev. B
3
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FDP44N25 / FDPF44N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature
3.0
1.2
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 22 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 μA
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FDP44N25
Figure 9-2. Maximum Safe Operating Area for FDPF44N25
10
2
ID, Drain Current [A]
ID, Drain Current [A]
10
1
Operation in This Area is Limited by R DS(on)
DC
10 μs 100 μs 1 ms 10 ms 100 ms
10
2
10 μs 100 μs 1 ms 10 ms 100 ms
Operation in This Area is Limited by R DS(on)
10
1
DC
10
0
10
0
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-2
10
0
-2
10
10
1
10
2
10
0
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
50
40
ID, Drain Current [A]
30
20
10
0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
FDP44N25 / FDPF44N25 Rev. B
4
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FDP44N25 / FDPF44N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP44N25
ZθJC(t), Thermal Response
D=0.5
10
-1
0.2 0.1 0.05 0.02 0.01 single pulse
* N otes : 1. Z θ JC (t) = 0.41 C /W Max. 2. D uty Factor, D=t1 /t 2 3 . T JM - T C = P DM * Z θ JC (t)
o
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF44N25
D=0.5
ZθJC(t), Thermal Response
10
0
0.2 0.1 0.05
10
-1
PDM t1 t2
0.02 0.01
* Notes : 0 1. Z θJC(t) = 3.3 C/W Max. 2. Duty Factor, D=t1/t2 3. T JM - T C = P DM * Zθ JC(t)
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
FDP44N25 / FDPF44N25 Rev. B
5
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FDP44N25 / FDPF44N25 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP44N25 / FDPF44N25 Rev. B
6
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FDP44N25 / FDPF44N25 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP44N25 / FDPF44N25 Rev. B
7
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FDP44N25 / FDPF44N25 250V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP44N25 / FDPF44N25 Rev. B
8
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FDP44N25 / FDPF44N25 250V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70)
6.68 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47 9.75 ±0.30 0.80 ±0.10
(3 ) 0°
0.35 ±0.10 2.54TYP [2.54 ±0.20]
#1 2.54TYP [2.54 ±0.20] 4.70 ±0.20
0.50 –0.05
+0.10
2.76 ±0.20
9.40 ±0.20
Dimensions in Millimeters
FDP44N25 / FDPF44N25 Rev. B
9
15.87 ±0.20
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FDP44N25 / FDPF44N25 250V N-Channel MOSFET
tm
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PRODUCT STATUS DEFINITIONS Definition of Terms
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Datasheet Identification Advance Information Preliminary
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I26
No Identification Needed
Full Production
Obsolete
Not In Production
10 10 FDP44N25 / FDPF44N25 Rev. B
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