FDPF51N25

FDP51N25 / FDPF51N25 250V N-Channel MOSFET FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features • • • • • 51A, 250V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 63 pF) Fast switching Improved dv/dt capability UniFETTM July 2008 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP51N25 51 30 204 FDPF51N25 250 51* 30* 204* Unit V A A A V mJ A mJ V/ns ± 30 1111 51 32 4.5 320 3.7 -55 to +150 300 38 0.3 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP51N25 0.39 0.5 62.5 FDPF51N25 3.3 -62.5 Unit °C/W °C/W °C/WJ ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP51N25 / FDPF51N25 Rev. B FDP51N25 / FDPF51N25 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP51N25 FDPF51N25 Device FDP51N25 FDPF51N25 Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA, TJ = 25°C ID = 250μA, Referenced to 25°C VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 25.5A VDS = 40V, ID = 25.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 250 -----3.0 ------ Typ -0.25 -----0.048 43 2620 530 63 62 465 98 130 55 16 27 ---178 4.0 Max Units --1 10 100 -100 5.0 0.060 -3410 690 90 135 940 205 270 70 --51 204 1.4 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns μC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 125V, ID = 51A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 200V, ID = 51A VGS = 10V ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 51A VGS = 0V, IS = 51A dIF/dt =100A/μs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.68mH, IAS = 51A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 51A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP51N25 / FDPF51N25 Rev. B 2 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 10 2 Top : ID, Drain Current [A] ID, Drain Current [A] 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 2 150 C 10 1 o 10 1 25 C -55 C * Notes : 1. VDS = 40V 2. 250μs Pulse Test o o * Notes : 1. 250μs Pulse Test 2. TC = 25 C o 10 0 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [Ω], Drain-Source On-Resistance 0.14 10 0.12 2 0.10 VGS = 10V IDR, Reverse Drain Current [A] 0.08 10 1 VGS = 20V 0.06 150 C 25 C o o 0.04 0 25 50 75 100 * Note : TJ = 25 C o * Notes : 1. VGS = 0V 2. 250μs Pulse Test 125 150 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 6000 Ciss = Cgs + Cgd (Cds = shorted) Crss = Cgd Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 10 VGS, Gate-Source Voltage [V] VDS = 50V VDS = 125V VDS = 200V Capacitances [pF] 4000 Coss Ciss 8 6 4 2000 Crss * Note ; 1. VGS = 0 V 2. f = 1 MHz 2 * Note : ID = 51A 0 0 -1 10 0 10 20 30 40 50 60 10 0 10 1 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDP51N25 / FDPF51N25 Rev. B 3 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 25.5 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 μA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FDP51N25 Figure 9-2. Maximum Safe Operating Area for FDPF51N25 10 2 10 μs 100 μs 1 ms 10 ms 100 ms DC 10 2 10 μs 100 μs 1 ms 10 ms Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 1 ID, Drain Current [A] 10 1 Operation in This Area is Limited by R DS(on) 100 ms DC 10 0 10 0 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -2 10 0 10 1 10 2 10 -2 10 0 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 60 50 ID, Drain Current [A] 40 30 20 10 0 25 50 75 100 o 125 150 TC, Case Temperature [ C] FDP51N25 / FDPF51N25 Rev. B 4 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FDP51N25 ZθJC(t), Thermal Response D=0.5 10 -1 0.2 0.1 0.05 0.02 -2 PDM t1 t2 10 0.01 * Notes : 0 1. Z θ JC (t) = 0.39 C/W Max. 2. Duty Factor, D=t1 /t 2 single pulse 10 -5 3 . T JM - T C = P DM * Z θ JC (t) 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , Square W ave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FDPF51N25 D=0.5 ZθJC(t), Thermal Response 10 0 0.2 0.1 0.05 10 -1 PDM t1 t2 0.02 0.01 * Notes : 0 1. ZθJC(t) = 3.3 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] FDP51N25 / FDPF51N25 Rev. B 5 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP51N25 / FDPF51N25 Rev. B 6 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP51N25 / FDPF51N25 Rev. B 7 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FDP51N25 / FDPF51N25 Rev. B 8 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 2.54TYP [2.54 ±0.20] 4.70 ±0.20 0.50 –0.05 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FDP51N25 / FDPF51N25 Rev. B 9 15.87 ±0.20 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 10 FDP51N25 / FDPF51N25 Rev. B www.fairchildsemi.com