FDS6298 30V N-Channel Fast Switching PowerTrench® MOSFET
April 2007
FDS6298
30V N-Channel Fast Switching PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. ®
tm
Features
13 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V
Low gate charge (10nC @ VGS=5V) Very low Miller Charge (3nC) Low Rg (1 Ohm) ROHS Compliant
Applications
Control Switch for DC-DC Buck converters Notebook Vcore Telecom / Networking Point of Load
D D SO-8
D D
DD D D
5 6
4 3 2 1
Pin 1 SO-8
G SG S S SS S
TA=25oC unless otherwise noted
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W mJ °C
13 50 3.0 1.2 181 –55 to +150
Power Dissipation for Single Operation Power Dissipation for Single Operation Single Pulse Avalanche Energy
(Note 1a) (Note 1b) (Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b) (Note 1)
50 125 25
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6298 Device FDS6298 Reel Size 13’’ Tape width 12mm Quantity 2500 units
©2007 Fairchild Semiconductor Corporation
FDS6298 Rev. C1 ( W)
FDS6298 30V N-Channel Fast Switching PowerTrench® MOSFET
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆T J IDSS IGSS VGS(th) ∆VGS(th) ∆T J RDS(ON) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 12 A VGS= 10 V, ID = 13 A, TJ=125°C VDS = 10 V, ID = 13 A
Min Typ
30 1 0.3 30 1.7 –5 7.4 9.4 11 58 1108 310 109 1 11 5 27 7 10 3 3
Max
1 ±100 3 9 12 15 1.7 20 10 43 14 14 -
Units
V mV/°C µA nA V mV/°C mΩ S pF pF pF Ω ns ns ns ns nC nC nC
Off Characteristics
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
Dynamic Characteristics
VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω
-
VDS = 15 V, ID = 13 A, VGS = 5 V
Drain–Source Diode Characteristics
VSD trr Qrr
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' board design. s
Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
-
0.74 27 13
1.2 -
V ns nC
IF = 13 A, dIF/dt = 100 A/µs
a)
50°C/W when mounted 2 on a 1in pad of 2 oz copper
b) 125°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V
FDS6298 Rev. C1 (W)
FDS6298 30V N-Channel Fast Switching PowerTrench® MOSFET
Typical Characteristics
80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 0
2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0V 3.5.V 4.5V 4.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8
0.5 1 1.5 2 2.5
VGS = 3.0V
3.5V 4.0V 4.5V 5.0V
3.0V
6.0V
10V
0
10
20
30
40
50
60
70
80
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.028 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
ID = 13A VGS = 10V
ID = 6.5A
0.024 0.02 0.016
TA = 125oC
0.012 0.008 0.004 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
T A = 25o C
-25
0
25
50
75
100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55oC 125o C 25oC
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125oC 25oC -55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6298 Rev. C1 (W)
FDS6298 30V N-Channel Fast Switching PowerTrench® MOSFET
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13A 8 VDS = 10V 20V 6 15V
1500 CISS 1200 CAPACITANCE (pF) f = 1MHz VGS = 0 V
900
4
600 COSS 300 CRSS
2
0 0 4 8 12 16 20 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s 10s DC
IAS, AVALANCHE CURRENT (A) 100
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
10
1 VGS = 10V SINGLE PULSE RθJA = 125oC/W T A = 25 C
o
10
25
0.1
125
0.01 0.01
0.1
1
10
100
1 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (mS)
Figure 9. Maximum Safe Operating Area.
Figure 10. Unclamped Inductive Switching Capability
50 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE R θJA = 125°C/W TA = 25°C
40
30
20
10
0 0.001 0.01 0.1 t1, TIME (sec) 1 10 100
Figure 11. Single Pulse Maximum Power Dissipation.
FDS6298 Rev. C1 (W)
® ® ® FDS6298 30V N-Channel Fast Switching PowerTrench® MOSFET
Typical Characteristics
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RθJA(t) = r(t) * RθJA RθJA = 125 ° C/W
0.1
0.1 0.05 0.02
P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6298 Rev. C1 (W)
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Rev. I26
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