FDS6298

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Features General Description 13 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Low gate charge (10nC @ VGS=5V) Applications Low Rg (1 Ohm) Very low Miller Charge (3nC) Control Switch for DC-DC Buck converters ROHS Compliant Notebook Vcore Telecom / Networking Point of Load DD DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V Drain Current ID – Continuous (Note 1a) – Pulsed 13 50 A Power Dissipation for Single Operation (Note 1a) 3.0 Power Dissipation for Single Operation (Note 1b) 1.2 EAS Single Pulse Avalanche Energy (Note 3) 181 mJ TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C PD W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6298 FDS6298 13’’ 12mm 2500 units 2007 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDS6298/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V - IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V - VDS = VGS, ID = 250 µA 1 ID = 250 µA, Referenced to 25°C On Characteristics ID = 250 µA, Referenced to 25°C 30 - - V - 30 - mV/°C - 1 µA - ±100 nA 1.7 3 V - –5 - mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS(ON) Static Drain–Source On–Resistance VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 12 A VGS= 10 V, ID = 13 A, TJ=125°C - 7.4 9.4 11 9 12 15 mΩ gFS Forward Transconductance VDS = 10 V, ID = 13 A - 58 - S - 1108 - pF - 310 - pF - 109 - pF 0.3 1 1.7 Ω - 11 20 ns - 5 10 ns - 27 43 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time (Note 2) VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω tf Turn–Off Fall Time - 7 14 ns Qg Total Gate Charge - 10 14 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, ID = 13 A, VGS = 5 V - 3 - nC - 3 - nC - 0.74 1.2 V - 27 - ns - 13 - nC Drain–Source Diode Characteristics trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VSD VGS = 0 V, IS = 2.1 A (Note 2) IF = 13 A, dIF/dt = 100 A/µs Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' s board design. a) 50°C/W when mounted 2 on a 1in pad of 2 oz copper b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V www.onsemi.com 2 FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Electrical Characteristics 2.6 VGS = 10V ID, DRAIN CURRENT (A) 70 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 80 6.0V 60 3.5.V 50 40 30 3.0V 20 10 2.4 VGS = 3.0V 2.2 2 1.8 3.5V 1.6 4.0V 1.4 4.5V 0 0.5 1 1.5 2 0 2.5 10 20 10V 30 40 50 60 70 80 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.028 1.8 ID = 13A VGS = 10V 1.6 ID = 6.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 1 0.8 0 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.024 0.02 0.016 TA = 125oC 0.012 0.008 TA = 25oC 0.004 150 2 o 4 TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 80 25oC TA = -55oC 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 70 ID, DRAIN CURRENT (A) 5.0V 1.2 125o C 50 40 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 0 4 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Typical Characteristics 1500 ID = 13A VDS = 10V 8 1200 20V 6 4 2 900 600 COSS 300 0 CRSS 0 0 4 8 12 16 20 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 100 RDS(ON) LIMIT 10 1 100µs IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 10 25 125 1 0.01 100 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 tAV, TIME IN AVALANCHE (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching Capability P(pk), PEAK TRANSIENT POWER (W) 50 SINGLE PULSE R θJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 t1, TIME (sec) 1 Figure 11. Single Pulse Maximum Power Dissipation. www.onsemi.com 4 10 100 FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 12. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 5 100 1000 FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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