FDT434

FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V. • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) . • High power and current handling capability in a widely used surface mount package. Applications • Low Dropout Regulator • DC/DC converter • Load switch • Motor driving D D D D S D SOT-223 S G G D S SOT-223 * (J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings –20 ±8 (Note 1a) Units V V A W –6 –30 3 1.3 1.1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W Package Marking and Ordering Information Device Marking 434 Device FDT434P Reel Size 13’’ Tape width 12mm Quantity 2500 units 1999 Fairchild Semiconductor Corporation FDT434P Rev. C1 (W) FDT434P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 8 V, VGS = –8 V VGS = 0 V VDS = 0 V VDS = 0 V Min –20 Typ Max Units V Off Characteristics –28 –1 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA ID = –250 µA,Referenced to 25°C VGS = –4.5 V, VGS = –4.5 V, VGS = –2.5 V, VGS = –4.5 V, VDS = –10 V, ID = –6 A ID = –6 A TJ=125°C ID = –4 A VDS = –5 V ID = –6 A –0.4 –0.6 2 0.040 0.067 0.050 –1 V mV/°C 0.050 0.083 0.070 Ω ID(on) gFS On–State Drain Current Forward Transconductance –20 6.5 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –10 V, f = 1.0 MHz V GS = 0 V, 1240 270 100 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –5 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 8 15 45 30 16 25 65 50 19 ns ns ns ns nC nC nC VDS = –10 V, VGS = –4.5 V ID = –6 A, 13 1.8 3 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) –1.3 –0.75 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 42°C/W when 2 mounted on a 1in pad of 2 oz copper b) 95°/W when mounted 2 on a .0066 in pad of 2 oz copper c) 110°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDT434P Rev. C1 (W) FDT434P Typical Characteristics 20 -3. 0V - 2.5V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 VGS = - 4.5V 16 1.6 12 1.4 VGS = -2.5V -3.0V 8 - 2. 0V 1.2 -3.5V -4.0V -4.5V 4 D 1 -1. 5V 0 0 1 2 3 4 V - DS, DR - SOU AIN RCE VO LTAGE ( V) 5 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 ID = - 6 A VGS = - 4.5V     R
 VDS = -5V - I D, DRAIN CURRENT (A) 12 TJ = -55°C 25°C 125°C - I S, REVERSE DRAIN CURRENT (A) I 0.8 0 5 10 - I D, DRAIN CURRENT (A) 15 20 DR AI 15 9 6 3 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 
 I D = -6 A 1.6 
  T =125°C A 1.2 1    25°C 0.8 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150
   
       Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 VGS = 0V TJ = 125°C 1 25°C -55°C 0.1 0.01 0 0.9 1.2 1.5 1.8 2.1 2.4 -VGS , GATE TO SOURCE VOLTAGE (V) 2.7 0.001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDT434P Rev. C1 (W) FDT434P Typical Characteristics 5 I D = -6.0A 4 V D S - 5V = -1 0V -1 5V 2500 1000 3 400 2 200 C APAC ITAN CE( F 1 GS 100 50 0. 1 -I D, DRAIN CURRENT (A) POWER (W) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE V GA 0 0 3 6 9 Q g , GATE CH ARGE (nC) 12 15 0. 3 -V 1 3 , D AIN TO SOU R RCE VOL E (V) TAG 10 20 Figure 7. Gate Charge Characteristics. 100 100µs 10 RDS(ON) LIMIT 1s 10s DC 1 VGS= -4.5V SINGLE PULSE RθJA= 42oC/W TA= 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 10ms 100ms Figure 8. Capacitance Characteristics. 200 SINGLE PULSE 160 R θJA = 110 C/W T A = 25 C 120 o o 80 0.1 40 0 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse RθJA(t) = r(t) + RθJA RθJA = 110 °C/W P(pk) t1 t2 TJ - T A = P * RθJA(t) Duty Cycle, D = t 1 / t2 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDT434P Rev. C1 (W) SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F63TNR Label Antistatic Cover Tape Static Dissipative Embossed Carrier Tape F852 014 SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.1246 0.7250 D84Z TNR 500 7" Dia 184x187x47 1,000 0.1246 0.1532 F852 014 F852 014 F852 014 SOT-223 Unit Orientation 343mm x 342mm x 64mm Intermediate box for Standard F63TNR Label F63TNR Label 184mm x 184mm x 47mm Pizza Box for D84Z Option F63TNR Label sample LOT: CBVK741B019 FSID: PN2222A QTY: 3000 SPEC: SOT-223 Tape Leader and Trailer Configuration: Figure 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets September 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SOT-223 (12mm) A0 6.83 +/-0.10 B0 7.42 +/-0.10 W 12.0 +/-0.3 D0 1.55 +/-0.05 D1 1.50 +/-0.10 E1 1.75 +/-0.10 E2 10.25 min F 5.50 +/-0.05 P1 8.0 +/-0.1 P0 4.0 +/-0.1 K0 1.88 +/-0.10 T 0.292 +/0.0130 Wc 9.5 +/-0.025 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SOT-223 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 12mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 5.906 150 7.00 178 Dim W1 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 Dim W2 0.724 18.4 0.724 18.4 Dim W3 (LSL-USL) 0.469 – 0.606 11.9 – 15.4 0.469 – 0.606 11.9 – 15.4 12mm 13" Dia July 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 (FS PKG Code 47) 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 September 1999, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D