FGL40N150

FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C G TO-264 G C E TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGL40N150D 1500 ± 25 40 20 120 10 100 200 80 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.625 0.83 25 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation FGL40N150D Rev. A1 FGL40N150D Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1500 ------3.0 ± 100 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 40mA, VCE = VGE IC = 40A, VGE = 15V 3.5 2.5 5.0 3.5 7.5 4.5 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2450 220 75 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 40A, RG = 51Ω, VGE = 15V, Resistive Load, TC = 25°C VCE = 600 V, IC = 40A, VGE = 15V -------100 350 200 100 110 15 40 200 700 400 300 170 25 60 ns ns ns ns nC nC nC Electrical Characteristics of DIODE T Symbol VFM trr Parameter Diode Forward Voltage Diode Reverse Recovery Time C = 25°C unless otherwise noted Test Conditions IF = 10A IF = 10A, di/dt = 200A/us Min. --- Typ. 1.3 170 Max. 1.8 300 Units V ns ©2002 Fairchild Semiconductor Corporation FGL40N150D Rev. A1 FGL40N150D 100 Common Emitter 80 T C = 25 C 8V o 120 20V 15V 10V 100 Common Emitter VGE = 15V TC = 25 C TC = 125 C o o Collector Current, IC [A] 8 Collector Current, IC [A] 80 60 60 40 40 20 VGE = 6V 20 0 0 2 4 6 0 0 2 4 6 8 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 6 Common Emitter VGE = 15V Collector - Emitter Voltage, VCE [V] 5 IC = 80A 5000 Common Emitter VGE =0V, f=1MHz 4000 Tc=25 C o Capacitance [pF] 4 3000 Cies IC = 40A 3 IC = 20A 2 2000 Coes 1000 Cres 1 25 50 75 100 o 0 125 150 1 10 Case Temperature, TC [ C] Collector - Emitter Voltage, VCE [V] Fig 3. Collector to Emitter Saturation Voltage vs. Case Temperature Fig 4. Typical Capacitance vs. Collector to Emitter Voltage 20 Common Emitter T C = 25 C o 20 Common Emitter T C = 125 C 0 Collector - Emitter Voltage, V E[V] C 16 Collector - Emitter Voltage, VCE[V] 16 12 12 8 80A 4 40A 20A 0 0 4 8 12 16 20 8 80A 4 40A 20A 0 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FGL40N150D Rev. A1 FGL40N150D Common Emitter VGE = ± 15V, RG = 51Ω TC = 25 C TC = 125 C o o 1000 Common Emitter VGE = ± 15V, RG = 51Ω TC = 25 C TC = 125 C o o Switching Time [ns] tf Switching Time [ns] 1000 tr 100 td(on) td(off) 100 10 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 Collector Current, IC [A] Collector Current, IC [A] Fig 7. Turn-Off Characteristics vs. Collector Current Fig 8. Turn-On Characteristics vs. Collector Current Common Emitter VG E = ± 15V, RG = 51Ω TC = 2 5 C 10000 TC = 125 C o o Common Emitter VCC = 600V, VGE = ± 15V IC = 40A TC = 2 5 C o Switching Time [ns] Switching Loss [µJ] 1000 TC = 125 C o tf 1000 Eoff Eon 100 td(off) 100 10 20 30 40 50 60 70 80 90 10 100 Collector Current, IC [A] Gate Resistance, RG [Ω ] Fig 9. Switching Loss vs. Collector Current Fig 10. Turn-Off Characteristics vs. Gate Resistance 1000 Common Emitter VCC = 600V, VGE = ± 15V IC = 40A TC = 2 5 C o o 10000 Common Emitter VCC = 600V, VGE = ± 15V IC = 40A TC = 2 5 C o o Switching Time [ns] Switching Loss [µJ] TC = 125 C tr TC = 125 C td(on) 100 Eoff 1000 10 Eon 10 100 10 100 Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω ] Fig 11. Turn-On Characteristics vs. Gate Resistance ©2002 Fairchild Semiconductor Corporation Fig 12. Switching Loss vs. Gate Resistance FGL40N150D Rev. A1 FGL40N150D 16 14 Common Emitter R L = 15Ω , V CC = 600V T C = 25 C 12 100µ s o 100 Ic MAX (Pulsed) Ic MAX (Continuous) 50µ s Gate - Emitter Voltage, VGE [V] Collector Current, I C [A] 10 1ms DC Operation 1 Single Nonrepetitive 0.1 Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 o 10 8 6 4 2 0 0 25 50 75 100 125 150 0.01 Gate Charge, Qg [nC] Collector - Emitter Voltage, VCE [V] Fig 13. Gate Charge Characteristics Fig 14. SOA Characteristics 500 450 300 270 Reverse Recovery Time, t rr [ns] 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 IF = 10A Reverse Recovery Time, t rr [ns] 240 210 180 150 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 100A/us 200A/us di/dt = 50A/us di/dt [A/us] Forward Current, IF [A] Fig 15. Typical Trr vs. di/dt Fig 16. Typical Trr vs. Forward Current 1000 100 100 10 T C = 125℃ 100℃ Instantaneous Forward Current, I F [A] Reverse Current, I R [uA] 10 TC =125℃ 25℃ 1 1 0.1 25℃ 0.01 1E-3 300.0 600.0 900.0 1.2k 1.5k 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Reverse Voltage, V R [V] Instantaneous Voltage, V F [V] Fig 17. Reverse Current vs. Reverse Voltage Fig 18. Typical Forward Voltage Drop vs. Forward Current FGL40N150D Rev. A1 ©2002 Fairchild Semiconductor Corporation FGL40N150D Package Dimension TO-264 6.00 ±0.20 20.00 ±0.20 (4.00) (8.30) (8.30) (2.00) (1.00) (9.00) (9.00) (11.00) (0.50) 20.00 ±0.20 2.50 ±0.10 1.50 ±0.20 (R1 (7.00) (7.00) 4.90 ±0.20 (1.50) 2.50 ±0.20 (1.50) 3.00 ±0.20 1.00 –0.10 +0.25 (2.00) 20.00 ±0.50 (R 2.0 ø3.3 0 ±0 .20 .00 0) ) (1.50) 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.10 +0.25 2.80 ±0.30 5.00 ±0.20 3.50 ±0.20 (0.15) (1.50) (2.80) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation FGL40N150D Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5