FGL40N120AND

FGL40N120AND 1200V NPT IGBT January 2006 FGL40N120AND 1200V NPT IGBT Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G TO-264 GC E E Absolute Maximum Ratings Symbol VCES VGES IC ICM(1) IF IFM PD SCWT TJ TSTG TL Notes: (1) Pulse width limited by max. junction temperature Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds @TC = 25°C @TC = 100°C @TC = 100°C @TC = 25°C @TC = 100°C FGL40N120AND 1200 ±25 64 40 120 40 240 500 200 10 -55 to +150 -55 to +150 300 Units V V A A A A A W W µs °C °C °C Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 Typ. ---- Max. 0.25 0.7 25 Units °C/W °C/W °C/W www.fairchildsemi.com ©2006 Fairchild Semiconductor Corporation FGL40N120AND Rev. A FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information Device Marking FGL40N120AND Device FGL40N120AND Package TO-264 Reel Size TC = 25°C unless otherwise noted Tape Width - Quantity 25 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current Parameter Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ---- -0.6 --- --1 ±250 V V/°C mA nA On Characteristics VGE(th) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 40A, VGE = 15V VCE(sat) IC = 40A, VGE = 15V, TC = 125°C IC = 64A, VGE = 15V Dynamic Characteristics Cies Coes cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz ---3200 370 125 ---pF pF pF 3.5 ---5.5 2.6 2.9 3.15 7.5 3.2 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate charge Gate-Emitter Charge Gate-Collector Charge VCE = 600V, IC = 40A, VGE = 15V VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25°C -----------------15 20 110 40 2.3 1.1 3.4 20 25 120 45 2.5 1.8 4.3 25 130 220 ---80 3.45 1.65 5.1 -------38 195 330 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGL40N120AND Rev. A 2 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr C = 25°C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Test Conditions IF = 40A TC = 25°C TC = 125°C TC = 25°C TC = 125°C IF = 40A, di/dt = 200A/µs TC = 25°C TC = 125°C TC = 25°C TC = 125°C Min. --------- Typ. 3.2 2.7 75 130 8 13 300 845 Max. 4.0 -112 -12 -450 -- Units V nS A nC FGL40N120AND Rev. A 3 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 300 TC = 25°C Figure 2. Typical Saturation Voltage Characteristics 150 Common Emitter VGE = 15V 120 TC = 25°C TC = 125°C 250 20V 17V 15V Collector Current, IC [A] 200 12V Collector Current, IC [A] 10 90 150 60 100 VGE = 10V 50 30 0 0 2 4 6 8 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 5 Common Emitter VGE = 15V Figure 4. Load Current vs. Frequency 80 70 60 VCC = 600V Load Current : peak of square wave Collector-Emitter Voltage, VCE [V] 4 80A Load Current [A] 50 40 30 20 10 Duty cycle : 50% TC = 100°C Power Dissipation = 100W 0.1 1 10 100 1000 3 40A 2 IC = 20A 1 25 50 75 100 125 0 Case Temperature, TC [°C] Frequency [kHz] Figure 5. Saturation Voltage vs. VGE 20 Common Emitter TC = 25°C Figure 6. Saturation Voltage vs. VGE 20 Common Emitter TC = 125°C Collector-Emitter Voltage, VCE [V] 16 Collector-Emitter Voltage, VCE [V] 16 12 12 8 80A 4 40A IC = 20A 0 0 4 8 12 16 20 8 80A 4 40A IC = 20A 0 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] FGL40N120AND Rev. A 4 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics 6000 Common Emitter VGE = 0V, f = 1MHz TC = 25°C Ciss (Continued) Figure 8. Turn-On Characteristics vs. Gate Resistance 5000 100 Switching Time [ns] Capacitance [pF] 4000 tr 3000 2000 Coss 1000 Crss td(on) Common Emitter VCC = 600V, VGE = ±15V IC = 40A TC = 25°C TC = 125°C 0 1 10 10 0 10 20 30 40 50 60 70 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω] Figure 9. Turn-Off Characteristics vs. Gate Resistance 1000 Common Emitter VCC = 600V, VGE = ±15V, IC = 40A TC = 25°C TC = 125°C td(off) Figure 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 600V, VGE = ±15V IC = 40A 10 TC = 25°C TC = 125°C Eon 100 tf Switching Loss [mJ] Switching Time [ns] Eoff 1 10 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω] Figure 11. Turn-On Characteristics vs. Collector Current Common Emitter VGE = ±15V, RG = 5Ω 100 TC = 25°C TC = 125°C tr Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter VGE = ±15V, RG = 5Ω TC = 25°C TC = 125°C td(off) Switching Time [ns] Switching Time [ns] 100 tf td(on) 10 20 30 40 50 60 70 80 20 30 40 50 60 70 80 Collector Current, IC [A] Collector Current, IC [A] FGL40N120AND Rev. A 5 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Common Emitter VGE = ±15V, RG = 5Ω TC = 125°C Figure 14. Gate Charge Characteristics 16 14 Common Emitter RL = 15Ω TC = 25°C Vcc = 200V 600V Gate-Emitter Voltage, VGE [V] 10 TC = 25°C Eon 12 10 8 6 4 2 0 Switching Loss [mJ] 400V Eoff 1 0.1 20 30 40 50 60 70 80 0 50 100 150 200 250 Collector Current, IC [A] Gate Charge, Qg [nC] Figure 15. SOA Characteristics Ic MAX (Pulsed) 100 Ic MAX (Continuous) 100µs 50µs Figure 16. Turn-Off SOA 100 Collector Current, Ic [A] 10 DC Operation 1 1ms Collector Current, IC [A] 10 0.1 Single Nonrepetitive Pulse Tc = 25°C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 0.01 1 1 10 Safe Operating Area VGE = 15V, TC = 125°C 100 1000 Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current 10 100 Reverse Recovery Currnet , Irr [A] 8 di/dt = 200A/µs Forward Voltage , VF [V] TJ = 125°C 10 TJ = 25°C 6 4 di/dt = 100A/µs 2 1 TC = 125°C TC = 25°C 0.1 0 1 2 3 4 5 6 0 0 10 20 30 40 50 60 70 Forward Current , IF [A] Forward Current , IF [A] FGL40N120AND Rev. A 6 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics Figure 19. Stored Charge 100 (Continued) Figure 20. Reverse Recovery Time 400 90 di/dt = 200A/µs 80 Stored Recovery Charge , Qrr [nC] Reverse Recovery Time , trr [ns] 300 di/dt = 200A/µs 200 70 di/dt = 100A/µs 60 di/dt = 100A/µs 100 50 0 10 20 30 40 50 60 70 0 0 10 20 30 40 50 60 70 Forward Current , IF [A] Forward Current , IF [A] Figure 21. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.1 0.5 0.2 0.1 0.01 0.05 0.02 0.01 single pulse Pdm Pdm t1 t1 t2 t2 Duty factor D = t1 //t2 Duty factor D = t1 t2 Peak Tj = Pdm × Zthjc + TC Peak Tj = Pdm × Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGL40N120AND Rev. A 7 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Mechanical Dimensions TO-264 6.00 ±0.20 20.00 ±0.20 (8.30) (8.30) (1.00) (4.00) (2.00) (9.00) (9.00) (11.00) (0.50) 20.00 ±0.20 1.50 ±0.20 (R1 (7.00) (7.00) 2.50 ±0.20 3.00 ±0.20 1.00 –0.10 +0.25 20.00 ±0.50 (1.50) (1.50) 2.50 ±0.10 4.90 ±0.20 (2.00) 2 (R .00 ø3.3 0 ±0 .00 ) .20 ) (1.50) 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.10 +0.25 2.80 ±0.30 5.00 ±0.20 3.50 ±0.20 (0.15) (1.50) (2.80) Dimensions in Millimeters FGL40N120AND Rev. A 8 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 Preliminary No Identification Needed Full Production Obsolete Not In Production 9 FGL40N120AND Rev. A www.fairchildsemi.com