Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FGL35N120FTD
1200 V, 35 A Field Stop Trench IGBT
Features
General Description
• Field Stop Trench Technology
Using advanced field stop trench IGBT technology, Fairchild’s
1200V trench IGBTs offer the optimum performance for hard
switching application such as solar inverter, UPS, welder applications.
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35 A
• High Input Impedance
Applications
• Solar Inverter, UPS, Welder, PFC
C
G
TO-264 3L
G C E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
1200
V
VGES
Gate to Emitter Voltage
25
V
IC
ICM (1)
IF
PD
Collector Current
@ TC = 25oC
70
A
Collector Current
@ TC = 100oC
35
A
Pulsed Collector Current
@ TC = 25oC
105
A
Diode Continuous Forward Current
@ TC = 25oC
80
A
Diode Continuous Forward Current
@ TC = 100oC
40
A
o
Maximum Power Dissipation
@ TC = 25 C
368
W
Maximum Power Dissipation
@ TC = 100oC
147
W
TJ
Operating Junction Temperature
-55 to +150
o
C
Tstg
Storage Temperature Range
-55 to +150
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Max.
Unit
RJC(IGBT)
Symbol
Thermal Resistance, Junction to Case
Parameter
0.34
oC/W
RJC(Diode)
Thermal Resistance, Junction to Case
0.9
o
C/W
RJA
Thermal Resistance, Junction to Ambient
25
o
C/W
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
1
www.fairchildsemi.com
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
November 2013
Part Number
Top Mark
FGL35N120FTDTU
FGL35N120FTD
Package Packing Method
TO-264
Parameter
Tape Width
Quantity
N/A
N/A
30
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
1200
-
-
V
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±250
nA
3.5
6.2
7.5
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 35 mA, VCE = VGE
IC = 35 A, VGE = 15 V
-
1.68
2.2
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 35 A, VGE = 15 V,
TC = 125oC
-
2.0
-
V
-
5090
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
180
-
pF
-
95
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
34
-
ns
tr
Rise Time
-
63
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 600 V, IC = 35 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
-
172
-
ns
-
107
-
ns
-
2.5
-
mJ
-
1.7
-
mJ
Ets
Total Switching Loss
-
4.2
-
mJ
td(on)
Turn-On Delay Time
-
33
-
ns
tr
Rise Time
-
66
-
ns
td(off)
Turn-Off Delay Time
-
180
-
ns
tf
Fall Time
-
146
-
ns
Eon
Turn-On Switching Loss
-
3.1
-
mJ
Eoff
Turn-Off Switching Loss
-
2.1
-
mJ
Ets
Total Switching Loss
-
5.2
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
VCC = 600 V, IC = 35 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 600 V, IC = 35 A,
VGE = 15 V
2
-
210
-
nC
-
42
-
nC
-
101
-
nC
www.fairchildsemi.com
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
TC = 25°C unless otherwise noted
Test Conditions
IF = 35 A
Min.
Typ.
Max
TC = 25oC
-
2.7
3.4
TC = 125oC
-
2.5
-
TC = 25oC
-
337
-
-
520
-
-
7.6
-
-
12.9
-
TC = 25oC
-
1292
-
TC = 125oC
-
3377
-
TC =
TC = 25oC
IF = 35 A,
diF/dt = 200 A/s
TC =
Diode Reverse Recovery Charge
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
125oC
3
125oC
Unit
V
ns
A
nC
www.fairchildsemi.com
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
180
180
o
TC = 25 C
20V
150
o
TC = 125 C
17V
15V
20V
120
90
10V
60
9V
17V
15V
150
12V
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
12V
120
90
10V
60
9V
30
30
VGE = 8V
VGE = 8V
0
0
2
4
6
Collector-Emitter Voltage, VCE [V]
0
8
0
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
VGE = 15V
100
TC = 25 C
o
TC = 125 C
80
Common Emitter
VCE = 20V
100
o
Collector Current, IC [A]
Collector Current, IC [A]
8
Figure 4. Transfer Characteristics
120
60
40
o
TC = 25 C
o
TC = 125 C
80
60
40
20
20
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
4
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Common Emitter
2.4
2.2
2.0
35A
1.8
1.6
IC = 18A
1.4
1.2
25
o
TC = 25 C
16
12
8
70A
35A
4
IC = 18A
50
75
100
o
Case Temperature, TC [ C]
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
12
20
70A
Collector-Emitter Voltage, VCE [V]
2.6
Common Emitter
VGE = 15V
6
8
10
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
2.8
Collector-Emitter Voltage, VCE [V]
2
4
6
Collector-Emitter Voltage, VCE [V]
0
125
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Load Current vs. Frequency
150
20
Common Emitter
VCC = 600V
TC = 125 C
load Current : peak of square wave
16
120
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
o
12
8
70A
35A
4
90
60
30 Duty cycle : 50%
o
T = 100 C
C
IC = 18A
0
4
0
8
12
16
Gate-Emitter Voltage, VGE [V]
20
1
10
100
1000
Frequency, f [kHz]
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
15
8000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
o
Gate-Emitter Voltage, VGE [V]
Cies
o
TC = 25 C
6000
Capacitance [pF]
Power Dissipation = 147W
4000
Coes
2000
TC = 25 C
600V
12
VCC = 200V
400V
9
6
3
Cres
0
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
50
100
150
200
Gate Charge, Qg [nC]
250
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
400
10s
10
Switching Time [ns]
Collector Current, Ic [A]
100
100s
1ms
1
10 ms
DC
*Notes:
0.1
100
tr
td(on)
o
1. TC = 25 C
o
TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
Common Emitter
VCC = 600V, VGE = 15V
IC = 35A
o
TC = 125 C
20
0
4000
10
20
30
40
50
Gate Resistance, RG [ ]
5
www.fairchildsemi.com
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
200
2000
Common Emitter
VCC = 600V, VGE = 15V
IC = 35A
1000
100
o
td(off)
o
TC = 125 C
Switching Time [ns]
Switching Time [ns]
TC = 25 C
tf
tr
td(on)
Common Emitter
VGE = 15V, RG = 10
100
o
TC = 25 C
o
TC = 125 C
10
10
50
0
10
20
30
40
Gate Resistance, RG [ ]
50
Figure 15. Turn-off Characteristics vs.
Collector Current
20
30
40
50
Collector Current, IC [A]
70
Figure 16.Switching Loss vs. Gate Resistance
600
8
Common Emitter
VGE = 15V, RG = 10
Eon
o
TC = 25 C
o
TC = 125 C
Switching Loss [mJ]
Switching Time [ns]
60
td(off)
100
tf
Eoff
Common Emitter
VCC = 600V, VGE = 15V
1
IC = 35A
o
TC = 25 C
o
TC = 125 C
50
10
0.3
20
30
40
50
Collector Current, IC [A]
60
70
Figure 17. Switching Loss vs. Collector Current
0
10
20
30
40
Gate Resistance, RG [ ]
50
Figure 18. Turn off Switching
SOA Characteristics
200
10
100
Collector Current, IC [A]
Switching Loss [mJ]
Eon
Eoff
1
Common Emitter
VGE = 15V, RG = 10
o
10
TC = 25 C
Safe Operating Area
o
o
TC = 125 C
0.3
10
VGE = 15V, TC = 125 C
1
20
30
40
50
Collector Current, IC [A]
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
60
1
70
6
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
www.fairchildsemi.com
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Recovery Current
8
10
Reverse Recovery Currnet, Irr [A]
Forward Current, IF [A]
50
o
TJ = 125 C
o
TJ = 25 C
1
o
TC = 25 C
diF/dt = 200A/s
7
6
5
diF/dt = 100A/s
4
o
TC = 25 C
o
0.2
0.0
TC = 125 C
0.5
1.0
1.5
2.0
Forward Voltage, VF [V]
2.5
3
10
3.0
Figure 21. Stored Charge
600
Reverse Recovery Time, trr [ns]
Stored Recovery Charge, Qrr [C]
40
Figure 22. Reverse Recovery Time
1.4
1.2
20
30
Forward Current, IF [A]
diF/dt = 200A/s
1.0
diF/dt = 100A/s
0.8
500
diF/dt = 100A/s
400
diF/dt = 200A/s
300
200
o
o
TC = 25 C
0.6
10
20
30
TC = 25 C
100
10
40
20
Forward Current, IF [A]
30
40
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
PDM
0.01 0.02
t1
0.01
single pulse
0.001
1E-5
0.0001
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
7
www.fairchildsemi.com
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
Typical Performance Characteristics
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
Mechanical Dimensions
Figure 24. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO264-003
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
9
www.fairchildsemi.com
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Sync-Lock™
F-PFS™
®
AX-CAP®*
FRFET®
®*
®
Global Power ResourceSM
PowerTrench
BitSiC™
Build it Now™
GreenBridge™
PowerXS™
TinyBoost®
CorePLUS™
Programmable Active Droop™
Green FPS™
TinyBuck®
®
CorePOWER™
QFET
Green FPS™ e-Series™
TinyCalc™
CROSSVOLT™
QS™
Gmax™
TinyLogic®
Quiet Series™
CTL™
GTO™
TINYOPTO™
Current Transfer Logic™
RapidConfigure™
IntelliMAX™
TinyPower™
DEUXPEED®
ISOPLANAR™
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
SmartMax™
MICROCOUPLER™
ESBC™
TRUECURRENT®*
SMART
START™
MicroFET™
®
SerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
®
STEALTH™
MillerDrive™
Fairchild Semiconductor
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
®
SuperSOT™-3
mWSaver
FACT
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
®
VCX™
OPTOLOGIC
SuperSOT™-8
FastvCore™
®
®
VisualMax™
OPTOPLANAR
SupreMOS
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
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