FGA20N120FTDTU

FGA20N120FTD 1200V, 20A Trench IGBT December 2007 FGA20N120FTD 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE(sat) =1.6V @ IC = 20A • High input impedance • RoHS compliant tm General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Applications • Induction heating and Microvewave oven • Soft switching applications C G TO-3PN GCE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25 C @ TC = 100 C o o Ratings 1200 ± 25 @ TC = 25oC @ TC = 100 C o Units V V A A A A W W o o o 40 20 60 20 298 119 -55 to +150 -55 to +150 300 C C C Notes: 1: Repetitive rating, Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.42 2.0 40 Units o o o C /W C /W C /W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA20N120FTD Rev. A FGA20N120FTD 1200V, 20A Trench IGBT Package Marking and Ordering Information Device Marking FGA20N120FTD Device FGA20N120FTDTU Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 - - 1 ±250 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V TC = 25oC IC = 20A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3080 95 60 pF pF pF 3.5 5.9 1.60 7.5 2.00 V V - 1.85 - V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 20A, VGE = 15V VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC 30 79 143 217 0.42 0.71 1.13 29 93 147 259 0.47 0.86 1.33 137 23 65 320 1.05 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC 2 FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Electrical Characteristics of the Diode Symbol VFM trr Irr Qrr TC = 25°C unless otherwise noted Parameter Diode Forward Voltage Test Conditions IF = 20A TC = 25oC TC = 125oC TC = 25oC IES =20A, dI/dt = 200A/µs TC = 125oC o Min. - Typ. 1.3 1.3 447 485 48 50 10.8 12 Max 1.7 - Units V Diode Reverse Recovery Time ns Diode Peak Reverse Recovery Current TC = 25oC TC = 125 C TC = 25oC TC = 125 C o A µC Diode Reverse Recovery Charge 3 FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 150 Collector Current, IC [A] TC = 25 C o Figure 2. Typical Output Characteristics 180 TC = 125 C o 20V 17V 15V 20V 17V 15V 150 Collector Current, IC [A] 120 90 60 30 0 0.0 8V 7V V = 6V GE 10V 9V 12V 120 90 60 7V VGE = 6V 10V 9V 8V 12V 30 0 0.0 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 9.0 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 9.0 Figure 3. Typical Saturation Voltage Characteristics 120 100 Collector Current, IC [A] Common Emitter VGE = 15V TC = 25 C Figure 4. Transfer Characteristics 120 100 Collector Current, IC [A] Common Emitter VCE = 20V TC = 25 C TC = 125 C o o o 80 60 40 20 0 0 TC = 125 C o 80 60 40 20 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 3 6 9 12 Gate-Emitter Voltage,VGE [V] 15 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.8 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 40A Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C o 2.4 16 12 2.0 20A 8 1.6 IC = 10A 4 20A IC = 10A 40A 1.2 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 4 FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 5000 Cies Common Emitter VGE = 0V, f = 1MHz TC = 25 C o Collector-Emitter Voltage, VCE [V] 16 Capacitance [pF] 4000 12 3000 8 2000 Coes 4 IC = 10A 20A 40A 1000 Cres 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter o Figure 10. SOA Characteristics 100 10µs Gate-Emitter Voltage, VGE [V] TC = 25 C Collector Current, Ic [A] 12 VCC = 200V 600V 10 100µs 1ms 9 400V 1 10 ms DC *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 6 0.1 3 0 0 30 60 90 120 Gate Charge, Qg [nC] 150 0.01 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] Figure 11. Turn-on Characteristics vs. Gate Resistance 300 Figure 12. Turn-off Characteristics vs. Gate Resistance 2000 Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C TC = 125 C o o 1000 Switching Time [ns] 100 tr Switching Time [ns] td(off) td(on) Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C TC = 125 C o o tf 100 100 70 10 0 20 40 60 80 Gate Resistance, RG [Ω] 0 20 40 60 80 100 Gate Resistance, RG [Ω] 5 FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Figure 14. Turn-off Characteristics vs. Collector Current 1000 tr Switching Time [ns] 100 Switching Time [ns] TC = 125 C tf 100 td(off) td(on) Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C o o 10 10 20 30 40 50 10 10 20 30 40 50 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 4 Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C TC = 125 C o o Figure 16. Switching Loss vs. Collector Current 10 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Switching Loss [mJ] Switching Loss [mJ] Eoff TC = 125 C Eoff 1 1 Eon Eon 0.3 0 20 40 60 80 Gate Resistance, RG [Ω] 100 0.1 10 20 30 40 50 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 80 30 o 10 Collector Current, IC [A] TJ = 125 C TJ = 25 C o 10 Forward Current, IF [A] 1 Safe Operating Area TC = 125 C TC = 25 C o o 1 1 VGE = 15V, TC = 125 C o 10 100 1000 2000 0.1 0.0 Collector-Emitter Voltage, VCE [V] 0.5 1.0 1.5 Forward Voltage, VF [V] 2.0 6 FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Current 60 Reverse Recovery Currnet, Irr [A] Figure 20. Stored Charge 15000 Stored Recovery Charge, Qrr [nC] 50 40 30 20 10 0 5 10 15 20 Forward Current, IF [A] 25 di/dt = 100A/µs 200A/µs 12000 200A/µs 9000 di/dt = 100A/µs 6000 3000 0 5 10 15 20 25 Forward Current, IF [A] Figure 21.Reverse Recovery Time 1000 Reverse Recovery Time, trr [ns] 800 di/dt = 100A/µs 600 200A/µs 400 200 0 5 10 15 20 25 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 0.01 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] 1 10 7 FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters 8 FGA20N120FTD Rev. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 9 FGA20N120FTD Rev. A www.fairchildsemi.com