FGA30N120FTDTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench technology, Fairchild®’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven. • Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 30 A • High Input Impedance Applications • Solar Inverter, UPS, Welder, PFC C G TO-3P E G C E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ± 25 V IC ICM (1) IF Collector Current @ TC = 25oC 60 A Collector Current @ TC = 100oC 30 A o 90 A 100oC 30 A o W Pulsed Collector Current Diode Continuous Forward Current PD @ TC = 25 C @ TC = Maximum Power Dissipation @ TC = 25 C 339 Maximum Power Dissipation @ TC = 100oC 132 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Typ. Max. Unit RθJC(IGBT) Symbol Thermal Resistance, Junction to Case Parameter - 0.38 oC/W RθJC(Diode) Thermal Resistance, Junction to Case - 1.2 ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 1 o C/W www.fairchildsemi.com FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT April 2013 Thermal Resistance, Junction to Ambient oC/W - 40 Eco Status Packaging Type Qty per Tube Tube 30ea Package Marking and Ordering Information Device Marking Device Package FGA30N120FTD FGA30N120FTDTU TO-3PN RoHS For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA IC = 30mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 6 7.5 V IC = 30A, VGE = 15V - 1.6 2 V IC = 30A, VGE = 15V, TC = 125oC - 2.0 - V - 5140 - pF - 150 - pF - 95 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 31 - ns tr Rise Time - 101 - ns td(off) Turn-Off Delay Time - 198 - ns tf Fall Time - 259 - ns Eon Turn-On Switching Loss - 0.54 - mJ Eoff Turn-Off Switching Loss - 1.16 1.51 mJ Ets Total Switching Loss - 1.70 - mJ VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC td(on) Turn-On Delay Time - 40 - ns tr Rise Time - 127 - ns td(off) Turn-Off Delay Time - 211 - ns tf Fall Time - 364 - ns Eon Turn-On Switching Loss - 0.74 - mJ Eoff Turn-Off Switching Loss - 1.63 - mJ VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125oC Ets Total Switching Loss - 2.37 - mJ Qg Total Gate Charge - 208 - nC Qge Gate to Emitter Charge - 41 - nC Qgc Gate to Collector Charge - 97 - nC ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 VCE = 600V, IC = 30A, VGE = 15V 2 www.fairchildsemi.com FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT RθJA Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max o - 1.3 1.7 125oC - 1.3 - TC = 25oC - 730 - o TC = 125 C - 775 - TC = 25oC - 43 - - 47 - - 5.9 - - 18.2 - TC = 25 C VFM Diode Forward Voltage IF = 30A trr Diode Reverse Recovery Time Irr IF =30A, Diode Peak Reverse Recovery Current di/dt = 200A/μs Qrr Diode Reverse Recovery Charge TC = TC = ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 125oC TC = 25oC TC = 3 125oC Unit V ns A μC www.fairchildsemi.com FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 180 Figure 2. Typical Output Characteristics 180 o TC = 25 C 150 20V 150 17V 15V 120 12V 90 60 10V 9V 30 15V 17V Collector Current, IC [A] Collector Current, IC [A] o TC = 125 C 20V 120 90 12V 60 10V 30 9V VGE = 8V 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 0 8 Figure 3. Typical Saturation Voltage Characteristics 8 o TC = 125 C 80 Common Emitter VCE = 20V 100 o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 2 4 6 Collector-Emitter Voltage, VCE [V] 120 Common Emitter VGE = 15V 100 60 40 20 o TC = 25 C o TC = 125 C 80 60 40 20 0 2 4 Collector-Emitter Voltage, VCE [V] 0 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 5 10 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 60A 2.5 0 15 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 3.0 Collector-Emitter Voltage, VCE [V] 0 Figure 4. Transfer Characteristics 120 0 VGE = 8V 2.0 30A 1.5 IC = 10A Common Emitter o TC = 25 C 16 12 8 60A 4 30A IC = 15A 1.0 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Figure 8. Capacitance Characteristics 8000 Common Emitter o Collector-Emitter Voltage, VCE [V] TC = 125 C Cies 16 Capacitance [pF] 6000 12 8 4 0 Cres 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 20 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 200 100 Common Emitter o TC = 25 C 12 600V Collector Current, Ic [A] VCC = 200V 1 30 Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] Coes 30A IC = 15A 0 o TC = 25 C 4000 2000 60A Common Emitter VGE = 0V, f = 1MHz 400V 9 6 3 10μs 100μs 10 1ms 10 ms DC 1 *Notes: 0.1 o 1. TC = 25 C o 0 0 50 100 150 200 Gate Charge, Qg [nC] 0.01 250 Figure 11. Turn-on Characteristics vs. Gate Resistance 2. TJ = 150 C 3. Single Pulse 1 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-off Characteristics vs. Gate Resistance 500 2000 100 tr Common Emitter VCC = 600V, VGE = 15V IC = 30A td(on) td(off) Switching Time [ns] Switching Time [ns] 1000 tf Common Emitter VCC = 600V, VGE = 15V IC = 30A 100 o TC = 25 C o TC = 25 C o o TC = 125 C 10 0 20 40 60 80 Gate Resistance, RG [Ω ] ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 TC = 125 C 50 100 5 0 20 40 60 80 Gate Resistance, RG [Ω ] 100 www.fairchildsemi.com FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1000 1200 1000 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VGE = 15V, RG = 10Ω o o TC = 25 C o o TC = 125 C tr 100 td(on) 10 10 20 30 40 TC = 125 C Switching Time [ns] Switching Time [ns] TC = 25 C tf td(off) 100 10 50 20 30 40 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 50 Figure 16. Switching Loss vs. Collector Current 10 10 Common Emitter VGE = 15V, RG = 10Ω o Switching Loss [mJ] Switching Loss [mJ] TC = 25 C Eoff 1 Common Emitter VCC = 600V, VGE = 15V Eon IC = 30A Eoff o TC = 125 C 1 Eon o TC = 25 C o TC = 125 C 0.1 0 20 40 60 80 Gate Resistance, RG [Ω ] 0.1 10 100 Figure 17. Turn off Switching SOA Characteristics 100 Forward Current, IF [A] Collector Current, IC [A] 50 Figure 18. Forward Characteristics 100 10 10 o TJ = 125 C o TJ = 25 C 1 o TC = 25 C Safe Operating Area o o 1 20 30 40 Collector Current, IC [A] VGE = 15V, TC = 125 C 1 10 100 0.1 0.0 1000 2000 Collector-Emitter Voltage, VCE [V] ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 6 TC = 125 C 0.5 1.0 Forward Voltage, VF [V] 1.5 www.fairchildsemi.com FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Current Figure 20. Stored Charge 20 40 30 20 10 Stored Recovery Charge, Qrr [μC] Reverse Recovery Currnet, Irr [A] 50 200A/μs di/dt = 100A/μs 20 30 Forward Current, IF [A] 18 16 200A/μs 14 di/dt = 100A/μs 12 10 8 6 10 40 20 30 Forward Current, IF [A] 40 Figure 21. Reverse Recovery Time Reverse Recovery Time, trr [ns] 1000 800 600 400 10 di/dt = 100A/μs 200A/μs 20 30 Forward Current, IF [A] 40 Figure 22. Transient Thermal Impedance of IGBT PDM t1 ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 7 t2 www.fairchildsemi.com FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Mechanical Dimensions TO-3PN 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 9 www.fairchildsemi.com FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® PowerTrench AX-CAP * FRFET SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Build it Now™ Green Bridge™ Programmable Active Droop™ TinyBuck™ CorePLUS™ Green FPS™ QFET® TinyCalc™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ RapidConfigure™ GTO™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ ® DEUXPEED ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® and Better™ SignalWise™ TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® ® ® VisualMax™ SupreMOS OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR SyncFET™ FETBench™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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