Is Now Part of
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FGA20N120FTD
1200 V, 20 A Field Stop Trench IGBT
Features
General Description
• Field Stop Trench Technology
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate
in parallel configuration with exceptional avalanche ruggedness.
This device is designed for induction heating and microwave
oven.
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 20 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microvewave Oven
C
G
TO-3P
E
G C E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
IF
PD
Unit
1200
V
25
V
Continuous Collector Current
@ TC = 25oC
40
A
Continuous Collector Current
@ TC = 100oC
20
A
60
A
Pulsed Collector Current
Diode Continuous Forward Current
@ TC = 25oC
20
A
Diode Continuous Forward Current
@ TC = 100oC
10
A
298
W
o
Maximum Power Dissipation
@ TC = 25 C
Maximum Power Dissipation
o
@ TC = 100 C
119
Operating Junction Temperature
TJ
Ratings
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive rating, Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
o
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.42
RJC(Diode)
Thermal Resistance, Junction to Case
-
2.0
oC/W
RJA
Thermal Resistance, Junction to Ambient
-
40
o
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
1
C/W
C/W
www.fairchildsemi.com
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
November 2013
Part Number
Top Mark
Package Packing Method
FGA20N120FTDTU FGA20N120FTD
TO-3P
Parameter
Tape Width
Quantity
N/A
N/A
30
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
1200
-
-
V
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±250
nA
3.5
5.9
7.5
V
-
1.59
2
V
IC = 20 A, VGE = 15 V,
TC = 125oC
-
1.85
-
V
-
3080
-
pF
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
95
-
pF
-
60
-
pF
-
30
-
ns
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 20 mA, VCE = VGE
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 20 A, VGE = 15 V
TC = 25oC
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
79
-
ns
td(off)
Turn-Off Delay Time
-
143
-
ns
tf
Fall Time
-
217
320
ns
Eon
Turn-On Switching Loss
-
0.42
-
mJ
Eoff
Turn-Off Switching Loss
-
0.71
1.05
mJ
Ets
Total Switching Loss
-
1.13
-
mJ
td(on)
Turn-On Delay Time
-
29
-
ns
tr
Rise Time
-
93
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Qg
VCC = 600 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Resistive Load, TC = 25oC
-
147
-
ns
-
259
-
ns
-
0.47
-
mJ
-
0.86
-
mJ
Total Switching Loss
-
1.33
-
mJ
Total Gate Charge
-
137
-
nC
-
23
-
nC
-
65
-
nC
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
VCC = 600 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Resistive Load, TC = 125oC
VCE = 600 V, IC = 20 A,
VGE = 15 V
2
www.fairchildsemi.com
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
TC = 25°C unless otherwise noted
Test Conditions
IF = 20 A
IF =20 A,
diF/dt = 200 A/s
Min.
Typ.
Max
TC = 25oC
-
1.3
1.7
TC = 125oC
-
1.3
-
TC = 25oC
-
447
-
-
485
-
TC = 25oC
-
48
-
o
TC = 125 C
-
50
-
TC = 25oC
-
10.8
-
o
-
12
-
TC =
125oC
TC = 125 C
3
Unit
V
ns
A
C
www.fairchildsemi.com
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
o
TC = 25 C
20V
TC = 125 C
Collector Current, IC [A]
12V
90
20V
17V
150
120
60
8V 7V V = 6V
GE
30
o
17V
15V
150
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
180
180
10V
15V
120
90
12V
60
7V VGE = 6V
10V
30
9V
9V
0
0.0
8V
1.5
3.0
4.5
6.0
7.5
Collector-Emitter Voltage, VCE [V]
0
0.0
9.0
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
VGE = 15V
100
TC = 25 C
o
TC = 125 C
80
Common Emitter
VCE = 20V
100
o
Collector Current, IC [A]
Collector Current, IC [A]
9.0
Figure 4. Transfer Characteristics
120
60
40
o
TC = 25 C
o
TC = 125 C
80
60
40
20
20
0
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
3
6
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
6
9
12
Gate-Emitter Voltage,VGE [V]
15
Figure 6. Saturation Voltage vs. VGE
2.8
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
1.5
3.0
4.5
6.0
7.5
Collector-Emitter Voltage, VCE [V]
40A
2.4
2.0
20A
1.6
IC = 10A
Common Emitter
o
TC = 25 C
16
12
8
4
40A
20A
IC = 10A
1.2
25
50
75
100
o
Case Temperature, TC [ C]
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
0
125
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
20
5000
Common Emitter
TC = 125 C
Common Emitter
VGE = 0V, f = 1MHz
Cies
16
o
4000
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
12
8
20A
4
TC = 25 C
3000
2000
Coes
1000
40A
Cres
IC = 10A
0
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
1
Figure 9. Gate charge Characteristics
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
100
15
10s
Common Emitter
12
VCC = 200V
9
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
TC = 25 C
600V
400V
6
3
100s
10
1ms
1
10 ms
DC
*Notes:
0.1
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
0
0
30
60
90
120
Gate Charge, Qg [nC]
1
150
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
1000 2000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
300
2000
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
1000
tr
td(on)
TC = 25 C
Switching Time [ns]
Switching Time [ns]
o
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
o
td(off)
TC = 125 C
tf
o
TC = 25 C
100
o
TC = 125 C
10
0
20
40
60
80
Gate Resistance, RG []
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
70
100
0
20
40
60
80
100
Gate Resistance, RG []
5
www.fairchildsemi.com
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
500
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 10
o
TC = 25 C
tr
tf
Switching Time [ns]
Switching Time [ns]
o
TC = 125 C
100
td(on)
td(off)
100
Common Emitter
VGE = 15V, RG = 10
o
TC = 25 C
o
TC = 125 C
10
10
20
30
40
10
10
50
20
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
50
10
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
VGE = 15V, RG = 10
IC = 20A
o
TC = 25 C
TC = 25 C
Switching Loss [mJ]
o
Switching Loss [mJ]
40
Figure 16. Switching Loss vs. Collector Current
4
Eoff
o
TC = 125 C
1
Eon
0.3
0
20
40
60
80
Gate Resistance, RG []
o
TC = 125 C
Eoff
1
0.1
10
100
Eon
20
30
40
50
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
Figure 18. Forward Characteristics
30
80
Forward Current, IF [A]
10
Collector Current, IC [A]
30
Collector Current, IC [A]
10
o
TJ = 125 C
o
TJ = 25 C
1
o
TC = 125 C
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
o
TC = 25 C
100
0.1
0.0
1000 2000
Collector-Emitter Voltage, VCE [V]
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
6
0.5
1.0
1.5
Forward Voltage, VF [V]
2.0
www.fairchildsemi.com
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
15000
Stored Recovery Charge, Qrr [nC]
Reverse Recovery Currnet, Irr [A]
60
50
200A/s
40
30
20
diF/dt = 100A/s
10
o
TC = 25 C
0
5
10
15
20
Forward Current, IF [A]
12000
200A/s
9000
diF/dt = 100A/s
6000
3000
o
TC = 25 C
0
25
5
10
15
20
25
Forward Current, IF [A]
Figure 21.Reverse Recovery Time
Reverse Recovery Time, trr [ns]
1000
800
diF/dt = 100A/s
600
200A/s
400
200
o
TC = 25 C
0
5
10
15
20
25
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
PDM
0.01
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
7
1
10
www.fairchildsemi.com
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
Typical Performance Characteristics
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
Mechanical Dimensions
Figure 23. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
9
www.fairchildsemi.com
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Sync-Lock™
F-PFS™
®
AX-CAP®*
FRFET®
®*
®
Global Power ResourceSM
PowerTrench
BitSiC™
Build it Now™
GreenBridge™
PowerXS™
TinyBoost®
CorePLUS™
Programmable Active Droop™
Green FPS™
TinyBuck®
®
CorePOWER™
QFET
Green FPS™ e-Series™
TinyCalc™
CROSSVOLT™
QS™
Gmax™
TinyLogic®
Quiet Series™
CTL™
GTO™
TINYOPTO™
Current Transfer Logic™
RapidConfigure™
IntelliMAX™
TinyPower™
DEUXPEED®
ISOPLANAR™
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
SmartMax™
MICROCOUPLER™
ESBC™
TRUECURRENT®*
SMART
START™
MicroFET™
®
SerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
®
STEALTH™
MillerDrive™
Fairchild Semiconductor
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
®
SuperSOT™-3
mWSaver
FACT
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
®
VCX™
OPTOLOGIC
SuperSOT™-8
FastvCore™
®
®
VisualMax™
OPTOPLANAR
SupreMOS
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
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