FGA20S120M

FGA20S120M 1200 V, 20 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild®’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. • Low Saturation Voltage: VCE(sat) = 1.55 V @ IC = 20 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven C G TO-3PN E G C E Absolute Maximum Ratings T Symbol = 25°C unless otherwise noted Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC C Ratings Unit 1200 V ±25 V Collector Current @ TC = 25oC 40 A Collector Current @ TC = 100oC 20 A 60 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current @ TC = 25oC 40 A IF Diode Continuous Forward Current @ TC = 100oC 20 A 348 W PD TJ Maximum Power Dissipation Maximum Power Dissipation o @ TC = 25 C @ TC = 100oC 174 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +175 o -55 to +175 o C C oC 300 Thermal Characteristics Symbol RθJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. -- 0.43 o o RθJC(Diode) Thermal Resistance, Junction to Case -- 0.43 RθJA Thermal Resistance, Junction to Ambient -- 40 Unit C/W C/W oC/W Notes: 1: Limited by Tjmax ©2010 Fairchild Semiconductor Corporation FGA20S120M Rev. C0 1 www.fairchildsemi.com FGA20S120M 1200 V, 20 A Shorted-anode IGBT March 2013 Device Marking Device Package Reel Size Tape Width Quantity FGA20S120M FGA20S120M TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 2mA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA IC = 20mA, VCE = VGE On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage 4.5 6.0 7.5 V IC = 20A, VGE = 15V TC = 25oC - 1.55 1.85 V IC = 20A, VGE = 15V, TC = 125oC - 1.75 - V IC = 20A, VGE = 15V, TC = 175oC - 1.85 - V IF = 20A, TC = 25oC -- 1.7 2.2 V o -- 2.1 - V -- 2680 -- pF -- 53 -- pF -- 43 -- pF IF = 20A, TC = 175 C Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characcteristics td(on) Turn-On Delay Time - 43 - ns tr Rise Time - 176 - ns td(off) Turn-Off Delay Time - 310 - ns tf Fall Time - 320 480 ns Eon Turn-On Switching Loss - 0.52 - mJ Eoff Turn-Off Switching Loss - 1.43 2.15 mJ VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC Ets Total Switching Loss - 1.95 - mJ td(on) Turn-On Delay Time - 41 - ns tr Rise Time - 260 - ns td(off) Turn-Off Delay Time - 345 - ns tf Fall Time - 520 - ns Eon Turn-On Switching Loss - 0.78 - mJ Eoff Turn-Off Switching Loss - 1.97 - mJ Ets Total Switching Loss - 2.75 - mJ Qg Total Gate Charge - 208 - nC Qge Gate to Emitter Charge - 18 - nC Qgc Gate to Collector Charge - 119 - nC ©2010 Fairchild Semiconductor Corporation FGA20S120M Rev. C0 VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 175oC VCE = 600V, IC = 20A, VGE = 15V 2 www.fairchildsemi.com FGA20S120M 1200 V, 20 A Shorted-anode IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 140 140 o TC = 25 C 20V o 17V TC = 175 C 15V 100 80 12V 60 10V 40 VGE = 7V 20 20V 17V 120 Collector Current, IC [A] 120 Collector Current, IC [A] Figure 2. Typical Output Characteristics 15V 100 80 12V 60 40 9V 10V VGE = 7V 20 8V 0 0.0 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 0 0.0 9.0 Figure 3. Typical Saturation Voltage Characteristics 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 9.0 Figure 4. Transfer Characteristics 100 140 Common Emitter VCE = 20V Common Emitter VGE = 15V 120 o 80 TC = 25 C o Collector Current, IC [A] TC = 25 C Collector Current, IC [A] 9V 8V o 100 TC = 175 C 80 60 40 o TC = 175 C 60 40 20 20 0 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 3.0 20 Common Emitter VGE = 15V 40A 2.5 15 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3 6 9 12 Gate-Emitter Voltage,VGE [V] 2.0 20A 1.5 10A Common Emitter o TC = 25 C 16 12 8 20A 4 40A IC = 10A 1.0 25 50 75 100 125 150 o Case Temperature, TC [ C] ©2010 Fairchild Semiconductor Corporation FGA20S120M Rev. C0 0 175 3 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA20S120M 1200 V, 20 A Shorted-anode IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 6000 20 Common Emitter Common Emitter VGE = 0V, f = 1MHz Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 175 C 12 8 20A o TC = 25 C 4000 Coes 2000 Cres 40A 4 IC = 10A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate Charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 100 15 Common Emitter 10µs VCC = 200V 600V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C 12 400V 9 6 10 100µs 1 10 ms 1ms DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 3 0.01 0 0 30 60 90 120 150 Gate Charge, Qg [nC] 180 1 210 Figure 11. Turn-On Characteristics vs. Gate Resistance 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-Off Characteristics vs. Gate Resistance 3000 200 td(off) 1000 Switching Time [ns] Switching Time [ns] tr 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 20A tf Common Emitter VCC = 600V, VGE = 15V IC = 20A 100 o TC = 25 C o TC = 25 C o o TC = 175 C TC = 175 C 10 0 10 20 30 40 50 Gate Resistance, RG [Ω ] ©2010 Fairchild Semiconductor Corporation FGA20S120M Rev. C0 60 0 70 10 20 30 40 50 60 70 Gate Resistance, RG [Ω] 4 www.fairchildsemi.com FGA20S120M 1200 V, 20 A Shorted-anode IGBT Typical Performance Characteristics Figure 13. Turn-On Characteristics vs. Collector Current 3000 1000 Figure 14. Turn-off Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VGE = 15V, RG = 10Ω 800 o o TC = 25 C TC = 25 C o o tr Switching Time [ns] Switching Time [ns] TC = 175 C 100 td(on) 10 10 20 30 40 TC = 175 C 600 400 tf td(off) 200 10 50 20 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate resistance 40 50 Figure 16. Switching Loss vs. Collector Current 5 5 Eoff 1 Eoff Switching Loss [mJ] Switching Loss [mJ] 30 Collector Current, IC [A] Eon Common Emitter VCC = 600V, VGE = 15V IC = 20A 1 Eon Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 175 C o TC = 25 C o TC = 175 C 0.1 0 10 20 30 40 50 Gate Resistance, RG [Ω] 60 0.1 10 70 Figure 17. Turn-Off Switching SOA Characteristics Collector Currrent 20 30 40 Collector Current, IC [A] 50 Figure 18. Diode Forward Characteristics 100 30 Forward Current, IF [A] Collector Current, IC [A] 10 10 o TJ = 25 C o TJ = 175 C 1 o TC = 25 C Safe Operating Area o o VGE = 15V, TC = 175 C 1 1 10 TC = 175 C 100 0.1 0.0 1000 Collector-Emitter Voltage, VCE [V] ©2010 Fairchild Semiconductor Corporation FGA20S120M Rev. C0 5 0.5 1.0 1.5 Forward Voltage, VF [V] 2.0 www.fairchildsemi.com FGA20S120M 1200 V, 20 A Shorted-anode IGBT Typical Performance Characteristics FGA20S120M 1200 V, 20 A Shorted-anode IGBT Figure 19. Transient Thermal Impedeance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.3 0.1 0.05 0.02 0.01 PDM 0.01 t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] ©2010 Fairchild Semiconductor Corporation FGA20S120M Rev. C0 6 www.fairchildsemi.com FGA20S120M 1200 V, 20 A Shorted-anode IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2010 Fairchild Semiconductor Corporation FGA20S120M Rev. C0 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FGA20S120M Rev. 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