FJAF4310R

FJAF4310 FJAF4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 1 TO-3PF 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25°C) Junction to Case Junction Temperature Storage Temperature Value 200 140 6 10 1.5 80 1.48 150 - 55 ~ 150 Units V V V A A W °C/W °C °C RθJC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Cob fT * Pulse Test : PW=20µs Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Test Condition IC=5mA, IE=0 IC=50mA, RBE=∞ IE=5mA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=4V, IC=3A IC=5A, IB=0.5A VCB=10V, f=1MHz VCE=5V, IC=1A Min. 200 140 6 Typ. Max. Units V V V 10 10 50 250 30 180 0.5 µA µA V pF MHz Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product hFE Classification Classification hFE R 50 ~ 100 O 70 ~ 140 Y 90 ~ 180 ©2002 Fairchild Semiconductor Corporation Rev. A, November 2002 FJAF4310 Typical Characteristics IB = 300mA IB = 400mA 9 10 IB = 250mA IB = 200mA IB = 150mA 1000 VCE = 4 V IC [A], COLLECTOR CURRENT 8 hFE, DC CURRENT GAIN 7 6 5 4 3 2 IB = 100mA Ta = 25 C Ta = 125 C 100 o o IB = 50mA Ta = - 25 C o IB = 20mA 1 0 0 1 2 3 4 10 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characterstic Figure 2. DC current Gain 3.0 1 IC = 10 IB VCE(sat) [V], SATURATION VOLTAGE 2.5 2.0 VCE(sat) [V], SATURATION VOLTAGE Ta = 125 C 0.1 o 1.5 Ta = 25 C o 1.0 Ta = - 25 C o 0.5 IC= - 10A IC= - 5A 0.0 0.0 0.4 0.8 1.2 1.6 2.0 0.01 0.01 0.1 1 10 IB [A], BASE CURRENT IC [A], COLLECTOR CURRENT Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage 10 VCE = 4 V IC [A], COLLECTOR CURRENT 8 IC (Pulse) t=10ms t=100ms 10 Ic [A], COLLECTOR CURRENT IC(DC) 6 4 Ta = 25 C o 1 2 Ta = 125 C Ta = - 25 C o o T C=25℃ Single Pulse 1.5 0 0.0 0.5 1.0 0.1 0.1 1 10 100 VBE [V], Base-Emitter On VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. A, November 2002 FJAF4310 Typical Characteristics (Continued) 100 PC[W], COLLECTOR POWER DISSIPATION 80 60 40 20 0 0 25 50 75 100 125 150 175 TC [℃], CASE TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A, November 2002 FJAF4310 Package Dimensions TO-3PF 5.50 ±0.20 4.50 ±0.20 15.50 ±0.20 ø3.60 ±0.20 3.00 ±0.20 (1.50) 10.00 ±0.20 10 ° 26.50 ±0.20 23.00 ±0.20 16.50 ±0.20 14.50 ±0.20 0.85 ±0.03 16.50 ±0.20 2.00 ±0.20 14.80 ±0.20 2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 –0.10 +0.20 2.00 ±0.20 2.50 ±0.20 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.90 –0.10 +0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 1.50 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, November 2002 22.00 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1