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FJAF6812

FJAF6812

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    FJAF6812 - NPN Triple Diffused Planar Silicon Transistor - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
FJAF6812 数据手册
FJAF6812 FJAF6812 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µs • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1500 750 6 12 24 60 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ 1.4 Max 2.08 Units °C/W ©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001 FJAF6812 Typical Characteristics 11 100 10 Ib=1.8A Ib=1.6A IC [A], COLLECTOR CURRENT 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 Ib=1.4A Ib=1.2A Ib=1.0A Ib=800mA Ib=600mA Ib=400mA Ib=200mA 125 C 75 C o o VCE = 5V hFE, DC CURRENT GAIN Ta= - 25 C 25 C 10 o o 10 12 14 1 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC Current Gain 100 100 VCE(sat) [V], SATURATION VOLTAGE IC = 5IB IC = 3IB VCE(sat) [V], SATURATION VOLTAGE 10 10 125 C 1 o 125 C 1 o 75 C 25 C 0.1 o o 75 C o 0.1 o 25 C Ta = - 25 C o Ta = - 25 C o 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 14 10 VCE = 5V 12 IC [A], COLLECTOR CURRENT tSTG tSTG [µs], STORAGE TIME 10 1 8 tF [µs], FALL TIME 6 125 C o tF 0.1 4 75 C 2 o 25 C o Ta = - 25 C 0 0.0 0.5 1.0 1.5 0.01 -0.1 o RESISTIVE LOAD Vcc = 200V IC = 7A IB1 = 1.4A -1 -10 VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Switching Time ©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001 FJAF6812 Typical Characteristics (Continued) 100 30 IC (Pulsed) TC = 25 C Single Pulse 10ms 1ms 300µs o IC [A], COLLECTOR CURRENT 10 IC (DC) IC [A], COLLECTOR CURRENT 10 1 0.1 IB1 = 1.2A, IB2 = - 4A VBE (off) = - 3V L = 200µH Single Pulse 1 0.01 1 10 100 1000 5000 10 100 1000 5000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area 80 70 PC [W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC [ C], CASE TEMPERATURE Figure 9. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001 FJAF6812 Package Demensions TO-3PF 5.50 ±0.20 4.50 ±0.20 15.50 ±0.20 ø3.60 ±0.20 3.00 ±0.20 (1.50) 10.00 ±0.20 10 ° 26.50 ±0.20 23.00 ±0.20 16.50 ±0.20 14.50 ±0.20 0.85 ±0.03 16.50 ±0.20 2.00 ±0.20 14.80 ±0.20 2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 –0.10 +0.20 2.00 ±0.20 2.50 ±0.20 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.90 –0.10 +0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 1.50 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001 22.00 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ DISCLAIMER FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H2
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