FJP13007_08

FJP13007 — High Voltage Fast-Switching NPN Power Transistor July 2008 FJP13007 High Voltage Fast-Switching NPN Power Transistor High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current TC = 25°C unless otherwise noted Parameter Value 700 400 9 8 16 4 80 150 -65 ~ 150 Units V V V A A A W °C °C Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature © 2008 Fairchild Semiconductor Corporation FJP13007 Rev. A www.fairchildsemi.com 1 FJP13007 — High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Symbol BVCEO IEBO hFE1 hFE2 VCE(sat) TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage Conditions IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 25Ω Min. 400 Typ. Max 1 Units V mA 8 5 60 30 1.0 2.0 3.0 1.2 1.6 V V V V V MHz 110 1.6 3.0 0.7 pF μs μs μs VBE(sat) fT Cob tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storge Time Fall Time 4 * Pulse Test: PW ≤ 300μs, Duty Cycle ≤ 2% hFE Classification Classification hFE1 H1 15 ~ 28 H2 26 ~ 39 © 2008 Fairchild Semiconductor Corporation FJP13007 Rev. A www.fairchildsemi.com 2 FJP13007 — High Voltage Fast-Switching NPN Power Transistor Typical Characteristics Figure 1. DC Current Gain 100 Figure 2. Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 VCE = 5V IC = 3 IB hFE, DC CURRENT GAIN 1 VBE(sat) 10 0.1 VCE(sat) 1 0.1 1 10 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance 1000 1000 Figure 4. Turn On Time Cob[pF], OUTPUT CAPACITANCE tR, tD [ns], TURN ON TIME 100 tR 100 10 tD, VBE(off)=5V VCC=125V IC=5IB 1 0.1 1 10 100 1000 10 0.1 1 10 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time 10000 Figure 6. Forward Biased Safe Operating Area 100 tSTG, tF [ns], TURN OFF TIME VCC=125V IC=5IB IC[A], COLLECTOR CURRENT tSTG 1000 10μs 10 DC 1ms 100μs 1 100 tF 0.1 10 0.1 1 10 0.01 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE © 2008 Fairchild Semiconductor Corporation FJP13007 Rev. A www.fairchildsemi.com 3 FJP13007 — High Voltage Fast-Switching NPN Power Transistor Typical Characteristics (Continued) Figure 7. Reverse Biased Safe Operating Area 100 100 Figure 8. Power Derating 90 IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 80 70 60 50 40 30 20 10 1 0.1 0.01 10 0 100 1000 10000 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE © 2008 Fairchild Semiconductor Corporation FJP13007 Rev. A www.fairchildsemi.com 4 FJP13007 — High Voltage Fast-Switching NPN Power Transistor Mechanical Dimensions TO220 © 2008 Fairchild Semiconductor Corporation FJP13007 Rev. A www.fairchildsemi.com 5 FJP13007 FJP13007 High Voltage Fast-Switching NPN Power Transistor © 2008 Fairchild Semiconductor Corporation FJP13007 Rev. A www.fairchildsemi.com 6