FMG1G50US60

FMG1G50US60H IGBT FMG1G50US60H Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 50A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-GA E1/C2 Application • • • • • AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS C1 E2 G1 E1 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FMG1G50US60H 600 ± 20 50 100 50 100 10 250 -40 to +150 -40 to +125 2500 2.0 2.0 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2002 Fairchild Semiconductor Corporation FMG1G50US60H Rev. A FMG1G50US60H Electrical Characteristics of IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage VGE = 0V, IC = 50mA IC = 50A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3460 480 140 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---20 30 60 110 1.1 1.2 2.3 20 30 70 250 1.2 2.4 3.6 -145 28 65 ---200 -----------210 40 95 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 50A, VGE = 15V ©2002 Fairchild Semiconductor Corporation FMG1G50US60H Rev. A FMG1G50US60H Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C = 25°C unless otherwise noted Test Conditions T C = 2 5° C IF = 50A TC = 100°C T C = 2 5° C TC = 100°C IF = 50A di / dt = 100 A/us T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 1.9 1.8 90 130 5 7 225 455 Max. 2.8 -130 -6.5 -422 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.05 -Max. 0.5 1.0 -190 Units °C/W °C/W °C/W g ©2002 Fairchild Semiconductor Corporation FMG1G50US60H Rev. A FMG1G50US60H 140 120 Common Emitter T C = 2 5℃ 20V 15V 140 120 12V Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ Collector Current, IC [A] Collector Current, I C [A] 8 100 80 60 40 20 0 100 80 60 40 20 0 0 2 4 6 VGE = 10V 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [ V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 60 Common Emitter V GE = 1 5V Collector - Emitter Voltage, VC E [V] VCC = 3 00V Load Current : peak of square wave 4 50 100A Load Current [A] 40 3 50A 2 IC = 3 0A 30 20 1 10 0 -50 0 50 100 150 0 Duty cycle : 50% TC = 1 00℃ Power Dissipation = 70W 1 10 100 1000 Case Temperature, T C [ ℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 2 5℃ 16 20 Common Emitter TC = 125 ℃ 16 Collector - Emitter Voltage, V C E [V] Collector - Emitter Voltage, V CE [V] 12 12 8 8 100A 4 IC = 30A 0 50A 4 IC = 3 0A 0 0 4 8 100A 50A 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FMG1G50US60H Rev. A FMG1G50US60H 7000 Common Emitter V GE = 0V, f = 1MHz T C = 25 ℃ 1000 Common Emitter VCC = 300V, VGE = +/- 15V IC = 50A TC = 25 C 0 6000 Capacitance [pF] 5000 TC = 125 C 0 Ton 4000 Switching Time [ns] Cies Tr 100 3000 Coes 2000 Cres 1000 0 1 10 10 1 10 Collector - Emitter Voltage, V CE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VCC = 300V, VGE = +/- 15V IC = 50A TC = 25 C 0 Common Emitter VCC = 300V, VGE = +/- 15V IC = 50A 10000 TC = 25 C TC = 125 C 0 0 Toff Switching Loss [uJ] 1000 Switching Time [ns] TC = 125 C 0 Eoff Eon Eoff 1000 Tf 100 1 10 Gate Resistance, Rg [Ω ] 1 10 Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 300V, VGE = +/- 15V RG = 5.9Ω TC = 25 C TC = 125 C 0 0 1000 Common Emitter VCC = 300V, VGE = +/- 15V RG = 5.9Ω TC = 25 C TC = 125 C 0 0 Switching Time [ns] Switching Time [ns] 100 Ton Toff Tf Toff 100 Tf Tr 10 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FMG1G50US60H Rev. A FMG1G50US60H 15 Common Emitter VCC = 300V, VGE = +/- 15V RG = 5.9Ω 10000 TC = 25 C TC = 125 C 0 0 Gate - Emitter Voltage, VGE [ V ] 12 Common Emitter R L = 5 .9 Ω T C = 25℃ V CC = 1 00 V 3 00 V Switching Loss [uJ] Eoff Eon Eoff 1000 9 2 00 V 6 3 100 10 20 30 40 50 60 70 80 90 100 0 0 40 80 120 160 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 300 100 IC M AX. (Pulsed) IC M AX. (Continuous) 50us 300 100 Collector Current, I C [A] 1㎳ 10 DC Operation Collector Current, I C [A] 100us 10 1 Single Nonrepetitive Pulse TC = 2 5℃ Curves must be derated linerarly with increase in temperature 0.3 1 10 100 1000 Safe Operating Area V GE = 2 0V, T C = 1 00 C 1 1 10 100 1000 o 0.1 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 300 1 100 Thermal Response, Zthjc [℃/W] Collector Current, I C [A] 10 0.1 1 Single Nonrepetitive Pulse T J ≤ 1 25 ℃ V GE = 15V RG = 5 .9 Ω 0 100 200 300 400 500 600 700 0.01 T C = 25 ℃ IGBT : DIODE : 1E-3 10 -5 0.1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, V CE [V] Rectangular Pulse Duration [sec] Fig 17. RBSOA Characteristics ©2002 Fairchild Semiconductor Corporation Fig 18. Transient Thermal Impedance FMG1G50US60H Rev. A FMG1G50US60H 160 20 [A] 120 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, T rr [x10ns] Common Cathode V GE = 0V T C = 25℃ T C = 125 ℃ 10 Trr Forward Current, I F 80 Irr 5 40 Common Cathode di/dt = 100A/㎲ T C = 25 ℃ T C = 1 00 ℃ 2 0 10 20 30 40 50 0 0 1 2 3 4 Forward Voltage, V F [V] Forward Current, IF [A] Fig 19. Forward Characteristics Fig 20. Reverse Recovery Characteristics ©2002 Fairchild Semiconductor Corporation FMG1G50US60H Rev. A FMG1G50US60H Package Dimension 7PM-GA Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation FMG1G50US60H Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST â FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC â OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench â QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER â UHC™ SMART START™ UltraFET â SPM™ VCX™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5