FMG1G75US60L

FMG1G75US60L IGBT FMG1G75US60L Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 75A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-GA E1/C2 Application • • • • • AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS C1 E2 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Curent Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ AC 1minute FMG1G75US60L 600 ± 20 75 150 75 150 10 310 -40 to +150 -40 to +125 2500 2.0 2.0 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2002 Fairchild Semiconductor Corporation FMG1G75US60L Rev. A FMG1G75US60L Electrical Characteristics of IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage VGE = 0V, IC = 75mA IC = 75A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---7056 672 180 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---20 40 70 110 1.4 1.7 3.1 20 50 80 250 1.6 3.0 4.6 -310 62 130 ---200 -----------350 --ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC VCC = 300 V, IC = 75A, RG = 3.3Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 75A, RG = 3.3Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 75A, VGE = 15V ©2002 Fairchild Semiconductor Corporation FMG1G75US60L Rev. A FMG1G75US60L Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C = 25°C unless otherwise noted Test Conditions T C = 2 5° C IF = 75A TC = 100°C T C = 2 5° C TC = 100°C IF = 75A di / dt = 150 A/us T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 1.9 1.8 90 130 7 10 315 650 Max. 2.8 -130 -9 -590 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.05 -Max. 0.4 0.9 -190 Units °C/W °C/W °C/W g ©2002 Fairchild Semiconductor Corporation FMG1G75US60L Rev. A FMG1G75US60L 200 180 160 Common Emitter T C = 25 ℃ 20V 15V 12V 200 Common Emitter V GE = 15V T C = 25 ℃ T C = 125 ℃ Collector Current, I C [A] 140 120 100 80 60 40 20 0 0 2 4 6 8 Vge = 10V Collector Current, I C [A] 160 120 80 40 0 0.3 1 10 20 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 100 Common Emitter V GE = 1 5V Collector - Emitter Voltage, V CE [V] V CC = 300V Load Current : peak of square wave 4 150A 3 80 Load Current [A] 60 75A 2 IC = 4 0A 1 40 20 Duty cycle : 50% Tc = 100℃ Power Dissipation = 100W 0.1 1 10 100 1000 0 0 30 60 90 120 150 0 Case Temperature, Tc [℃ ] Frequency [Khz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 ℃ 20 Common Emitter TC = 1 25℃ Collector - Emitter Voltage, V CE [V] 16 Collector - Emitter Voltage, V CE [V] 16 12 12 8 8 150A 4 Ic = 40A 0 75A 150A 4 Ic = 40A 0 0 4 8 12 16 20 75A 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FMG1G75US60L Rev. A FMG1G75US60L 16000 14000 12000 1000 Common Emitter V GE = 0V, f = 1MHz T C = 25 ℃ Cies Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A TC = 25 C 0 Ton Capacitance [pF] TC = 125 C 0 Switching Time [ns] 10000 8000 6000 Coes 4000 Cres 2000 0 1 10 Tr 100 10 1 10 Collector - Emitter Voltage, V CE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A TC = 25 C 0 Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A 10000 TC = 25 C TC = 125 C 0 0 1000 Switching Time [ns] TC = 125 C 0 Toff Switching Loss [uJ] Eon Eoff Tf 100 1000 1 10 Gate Resistance, Rg [Ω ] 1 10 Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 300V, VGE = +/- 15V RG = 3.3Ω TC = 25 C TC = 125 C 0 0 Common Emitter VCC = 300V, VGE = +/- 15V RG = 3.3Ω 1000 TC = 25 C TC = 125 C 0 0 Switching Time [ns] 100 Tr Switching Time [ns] Ton Toff Tf Toff Tf 100 10 20 40 60 80 100 120 140 20 40 60 80 100 120 140 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FMG1G75US60L Rev. A FMG1G75US60L 15 Common Emitter VCC = 300V, VGE = +/- 15V RG = 3.3Ω G ate - Emitter Voltage, V GE [ V ] 10000 TC = 25 C TC = 125 C 0 0 12 Common Emitter RL = 4 Ω T C = 25℃ 300 V Switching Loss [uJ] Eoff Eon Eoff 1000 Eon 9 200 V 6 VCC = 100 V 3 100 20 40 60 80 100 120 140 0 0 50 100 150 200 250 300 350 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 IC MAX. (Pulsed) 100 IC MAX. (Continuous) 100us 1㎳ 50us 100 Collector Current, I C [A] 10 DC Operation Collector Current, I C [A] 10 1 Single Nonrepetitive Pulse TC = 2 5 ℃ Curves must be derated linerarly with increase in temperature 0.3 1 10 100 1000 Safe Operating Area V GE = 20V, TC = 100 C 1 1 10 100 1000 o 0.1 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 500 1 100 Thermal Response, Zthjc [℃/W] Collector Current, I C [A] 0.1 10 1 Single Nonrepetitive Pulse TJ ≤ 125 ℃ V GE = 15V RG = 3 .3 Ω 0 100 200 300 400 500 600 700 0.01 T C = 25℃ IGBT : DIODE : 1E-3 10 -5 0.1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, VCE [V] Rectangular Pulse Duration [sec] Fig 17. RBSOA Characteristics ©2002 Fairchild Semiconductor Corporation Fig 18. Transient Thermal Impedance FMG1G75US60L Rev. A FMG1G75US60L 200 20 160 Peak Reverse Recovery Current I rr [A] Reverse Recovery Time Trr [x10ns] Common Cathode VGE = 0V TC = 2 5 ℃ TC = 125 ℃ Forward Current, I F [A] 10 T rr Irr 120 80 5 40 Common Cathode di/dt = 150A/㎲ T C = 2 5℃ T C = 100℃ 2 0 10 20 30 40 50 60 70 80 0 0 1 2 3 4 Forward Voltage, V F [V] Forward Current, IF [A] Fig 19. Forward Characteristics Fig 20. Reverse Recovery Characteristics ©2002 Fairchild Semiconductor Corporation FMG1G75US60L Rev. A FMG1G75US60L Package Dimension 7PM-GA Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation FMG1G75US60L Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST â FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC â OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench â QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER â UHC™ SMART START™ UltraFET â SPM™ VCX™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5