FMG2G75US120

FMG2G75US120 IGBT FMG2G75US120 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required. Features • • • • • • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 75A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-GA Application • • • • • AC & DC Motor Controls General Purpose Inverters Weldings Servo Controls UPS C1 E1/C2 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TSC TJ TSTG VISO Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminal Screw : M5 Mounting Screw : M5 @ TC = 100°C FMG2G75US120 1200 ± 20 75 150 75 150 445 10 -40 to +150 -40 to +125 2500 4.0 4.0 Units V V A A A A W us °C °C V N.m N.m @ AC 1minute Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A FMG2G75US120 Electrical Characteristics of IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 ± 100 V V/°C mA nA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC =75mA, VCE = VGE IC = 75A, VGE = 15V 5.0 -7.0 2.6 8.5 3.0 V V Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC =75A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C ------------10 ---75 80 295 50 6.9 4.3 80 80 310 70 8.4 5.6 -570 90 310 ---150 ------------ns ns ns ns mJ mJ ns ns ns ns mJ mJ us nC nC nC VCC = 600 V, IC = 75A, RG =10Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 600 V, VGE = 15V 100°C @ TC = VCE = 300 V, IC =75A, VGE = 15V Electrical Characteristics of DIODE Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions IF = 75A T C = 2 5° C TC = 125°C T C = 2 5° C TC = 125°C IF = 75A di / dt = 1000 A/us T C = 2 5° C TC = 125°C T C = 2 5° C TC = 125°C Min. --------- Typ. 2.3 2.2 150 225 47 61 3525 6863 Max. 3.0 ------- Unit s V ns A nC Thermal Characteristics Symbol RθJC RθJC RθJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.035 240 Max. 0.28 0.34 --Units °C/W °C/W °C/W g ©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A FMG2G75US120 160 140 Common Emitter VGE = 15V TC = 25℃ ℃℃ TC = 125℃ ------ 160 140 Common Emitter TC = 25℃ 20V 15V 12V [A] C o ll e c t o r C u r r e n t , I 80 60 40 20 0 C o ll e c t o r C u r r e n t , I 100 [A] C 120 120 100 80 60 40 20 0 C VGE = 10V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 CE 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 CE 3.0 3.5 C o ll e c t o r - E m it t e r V o lt a g e , V [V] C o ll e c t o r - E m it t e r V o lt a g e , V [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 160 140 120 Common Emitter TC = 125℃ 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 100A 75A Common Emitter VGE = 15V 150A [A] C o ll e c t o r C u r r e n t , I 15V 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 CE 12V VGE = 10V C o ll e c t o r C u r r e n t , I 100 20V C C [A] IC = 40A 3.0 3.5 25 50 75 C 100 125 C o ll e c t o r - E m it t e r V o lt a g e , V [V] C ase Te m p erature, T [0C ] Fig 3. Typical Saturation Voltage Characteristics Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level 1000 S w it c h i n g T i m e [ n s ] Ton 100 Tr S w it c h i n g T i m e [ n s ] Common Emitter VGE = ± 15 V, RG = 10Ω TC = 25℃ ℃℃ TC = 125℃ ------ 1000 Common Emitter VGE = ± 15 V, RG = 10Ω TC = 25℃ ℃℃ TC = 125℃ ------ T o ff 100 Tf 10 30 40 50 60 70 C 10 80 90 100 30 40 50 60 70 C 80 90 100 C o ll e c t o r C u r r e n t , I [A] C o ll e c t o r C u r r e n t , I [A] Fig 5. Turn-On Characteristics vs. Collector Current ©2004 Fairchild Semiconductor Corporation Fig 6. Turn-Off Characteristics vs. Collector Current FMG2G75US120 Rev. A FMG2G75US120 16 14 12 Common Emitter VGE = ± 15 V, RG = 10Ω TC = 25℃ ℃℃ TC = 125℃ -----Common Emitter VCC = 600 V, VGE = ± 15 V IC = 75 A TC = 25℃ ℃℃ TC = 125℃ ------ Eon 1000 S w it c h i n g L o s s [ m J ] 10 8 6 4 2 0 30 40 50 60 70 C S w it c h i n g T i m e [ n s ] Ton E o ff 100 Tr 80 90 100 0 10 20 30 G 40 50 C o ll e c t o r C u r r e n t , I [A] G ate R e sista n c e, R [ Ω] Fig 7. Switching Loss vs. Collector Current Fig 8. Turn-on Characteristics vs. Gate Resistance 20 S w it c h i n g T i m e [ n s ] T o ff S w it c h i n g l o s s [ m J ] 1000 Common Emitter VCC = 600 V, VGE = ± 15 V IC = 75 A TC = 25℃ ℃℃ TC = 125℃ ------ 16 Common Emitter VCC = 600 V, VGE = ± 15 V IC = 7 5 A TC = 25℃ ℃℃ TC = 125℃ ------ 12 Eon 8 E o ff 4 100 Tf 10 0 0 10 20 30 G 40 50 0 10 20 30 G 40 50 G ate R e sista n c e, R [ Ω] G ate R e sista n c e, R [ Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 15 Common Emitter RL = 7.5 Ω VCE = 600V TC = 25℃ 160 140 Common Cathode VGE = 0V TC = 25℃ TC = 125℃ [V] GE 12 Gate - Emitter Voltage, V F [A] Forward Current, I 120 100 80 60 40 20 9 6 3 0 0 100 200 300 400 500 600 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate Charge, Qg [ nC ] Forward Voltage, VF [V] Fig 11. Gate Charge Characteristics ©2004 Fairchild Semiconductor Corporation Fig 12. Forward Characteristics(diode) FMG2G75US120 Rev. A FMG2G75US120 Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [ns] 1000 Common Cathode di/dt = 1000A/㎲ TC = 25℃ TC = 125℃ ------Trr 100 Irr 10 30 40 50 60 70 80 90 100 Forward Current, IF [A] Fig 13. Reverse Recovery Characteristics(diode) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A FMG2G75US120 Package Dimension 7PM-GA Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I11