FMG2G200US60

FMG2G200US60 IGBT FMG2G200US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required. Features • • • • • • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 200A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-HA Application • • • • • AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS C1 E1/C2 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TSC TJ TSTG VISO Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminal Screw : M5 Mounting Screw : M6 @ TC = 80°C @ T C = 80° C @ T C = 2 5° C @ TC = 100°C FMG2G200US60 600 ± 20 200 400 200 400 695 10 -40 to +150 -40 to +125 2500 4.0 4.0 Units V V A A A A W us °C °C V N.m N.m @ AC 1minute Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2003 Fairchild Semiconductor Corporation FMG2G200US60 Rev. A FMG2G200US60 Electrical Characteristics of IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 200mA, VCE = VGE IC = 200A, VGE = 15V 5.0 -6.5 2.1 8.5 2.7 V V Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 200A, RG = 2Ω, VGE = 15V, Inductive Load, TC = 25°C ------------10 ---80 120 130 130 2.7 6.0 200 130 170 240 4.4 10.5 -625 150 215 ---250 ------------ns ns ns ns mJ mJ ns ns ns ns mJ mJ us nC nC nC VCC = 300 V, IC = 200A, RG = 2Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V 100°C @ TC = VCE = 300 V, IC =200A, VGE = 15V Electrical Characteristics of DIODE Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions T C = 2 5° C IF = 200A TC = 100°C T C = 2 5° C TC = 100°C IF = 200A di / dt = 400 A/us T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 1.9 1.8 90 130 19 25 855 1625 Max. 2.8 -130 -25 -1600 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.04 240 Max. 0.18 0.37 --Units °C/W °C/W °C/W g ©2003 Fairchild Semiconductor Corporation FMG2G200US60 Rev. A FMG2G200US60 400 Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 400 350 300 Common Emitter T C = 2 5℃ 20V 15V 12V V GE 300 [A] [A] = 10V 250 200 150 100 50 0 C C o ll e c t o r C u r r e n t , I 200 100 0 1 10 CE C o ll e c t o r C u r r e n t , I C 0 1 2 3 CE 4 C o ll e c t o r - E m it t e r V o lt a g e , V [V] C o ll e c t o r - E m it t e r V o lt a g e , V [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 15V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 25 50 75 C 400 350 300 Common Emitter TC = 125℃ 20V 250 V 200 150 100 50 0 0 1 2 3 CE C o ll e c t o r C u r r e n t , I = 10V GE C o ll e c t o r - E m it t e r V o lt a g e , V C [A] CE [V] 12V Common Emitter VGE = 15V 400A 200A 100A 4 100 125 C o ll e c t o r - E m it t e r V o lt a g e , V [V] C ase T e m p erature, T [℃ ] Fig 3. Typical Saturation Voltage Characteristics Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level S w it c h i n g T i m e [ n s ] S w it c h i n g T i m e [ n s ] 1000 Common Emitter VCC = 300V, VGE = ± 15V IC = 200A TC = 25℃ ━━ TC = 125℃ ------ 1000 Common Emitter VCC = 300V, VGE = ± 15V IC = 200A TC = 25℃ ━━ TC = 125℃ ------ T o ff Ton Tr Tf 100 100 5 10 15 20 25 30 5 10 15 20 25 30 G ate R e sista n c e, R g [ Ω ] G ate R e sista n c e, R g [ Ω ] Fig 5. Turn-On Characteristics vs. Gate Resistance ©2003 Fairchild Semiconductor Corporation Fig 6. Turn-Off Characteristics vs. Gate Resistance FMG2G200US60 Rev. A FMG2G200US60 S w it c h i n g L o s s [ m J ] 10 E o ff Eon S w it c h i n g T i m e [ n s ] Common Emitter VCC = 300V, VGE = ± 15V IC = 200A TC = 25℃ ━━ TC = 125℃ ------ 1000 Common Emitter VGE = ± 15V, RG = 2Ω TC = 25℃ ━━ TC = 125℃ ------ Ton 100 Tr 1 0 5 10 15 20 25 30 100 150 200 C 250 300 G ate R e sista n c e, R g [ Ω ] C o ll e c t o r C u r r e n t , I [A] Fig 7. Switching Loss vs. Gate Resistance Fig 8. Turn-On Characteristics vs. Collector Current 100 Common Emitter VGE = ± 15V, RG = 2Ω TC = 25℃ ━━ TC = 125℃ -----Common Emitter VGE = ± 15V, RG = 2Ω TC = 25℃ ━━ TC = 125℃ ------ 1000 S w it c h i n g T i m e [ n s ] S w it c h i n g L o s s [ u J ] T o ff E o ff 10 Eon Tf 100 1 100 150 200 C 250 300 100 150 200 C 250 300 C o ll e c t o r C u r r e n t , I [A] C o ll e c t o r C u r r e n t , I [A] Fig 9. Turn-Off Characteristics vs. Collector Current Fig 10. Switching Loss vs. Collector Current 15 Common Emitter IC = 200A VCC = 300V TC = 25 C o 500 Common Cathode VGE = 0 V T C = 25℃ T C = 1 25℃ [V] 12 400 G a t e - E m itt e r V o lt a g e , V 9 [A] 300 GE C u rr e n t, F orw ard 6 I F 200 3 0 100 0 0 100 200 300 g 400 500 600 700 0 1 2 3 4 G ate C harg e, Q [nC] F o r w a r d V o lt a g e , V F [V] Fig 11. Gate Charge Characteristics ©2003 Fairchild Semiconductor Corporation Fig 12. Forward Characteristics(diode) FMG2G200US60 Rev. A FMG2G200US60 50 P e a k R e v e r s e R e c o v e r y C u rr e n t, I [ A ] rr R evers e R e c o very Tim e, T [x 1 0 n s] Common Cathode di/dt = 400A/㎲ T C = 25 ℃ T C = 100 ℃ rr Irr 10 t rr 5 0 40 80 120 160 200 F orw ard C u rr e n t, I F [A] Fig 13. Reverse Recovery Characteristics(diode) ©2003 Fairchild Semiconductor Corporation FMG2G200US60 Rev. A FMG2G200US60 Package Dimension 7PM-HA 40.0 ±0.50 23.0 ±0.50 23.0 ±0.50 2- Ø6.5 ±0.30 Mounting-Hole G2 E2 13.0 ±0.60 18.0 ±0.60 26.0 ±0.60 E1 G1 3-M5 80.0 ±0.50 94.0 ±0.50 3-10.0 ±0.50 5.95 ±0.60 Ø1.3 8.00 ±0.50 3-16.0 ±0.50 2.80 -0.50 *0.5t +0.00 48.0 ±0.60 28.0 ±0.50 45.5 ±0.50 Dimensions in Millimeters 30.0 -0.60 +0.20 Name Plate ©2003 Fairchild Semiconductor Corporation 22.0 -0.60 +0.20 FMG2G200US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2003 Fairchild Semiconductor Corporation Rev. I2