HGTP7N60A4D

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49333. Features • >100kHz Operation At 390V, 7A • 200kHz Operation At 390V, 5A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER™ Model www.fairchildsemi.com Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG7N60A4D HGTP7N60A4D HGT1S7N60A4DS PACKAGE TO-247 TO-220AB TO-263AB BRAND G7N60A4D G7N60A4D G7N60A4D COLLECTOR (FLANGE) JEDEC TO-220AB E C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S7N60A4DS9A. G Symbol C COLLECTOR (FLANGE) G JEDEC TO-263AB E G E COLLECTOR (FLANGE) FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 34 14 56 ±20 ±30 35A at 600V 125 1.0 -55 to 150 300 260 W W/oC oC oC oC UNITS V A A A V V 600 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications PARAMETER TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = 600V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 4.5 35 VGE = 15V VGE = 20V IGBT and Diode at TJ = 125oC, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω, L = 1mH, Test Circuit (Figure 24) TYP 1.9 1.6 5.9 9 37 48 11 11 100 45 55 120 60 10 7 130 75 50 200 125 MAX 250 2 2.7 2.2 7 ±250 45 60 150 75 150 85 215 170 UNITS V µA mA V V V nA A V nC nC ns ns ns ns µJ µJ µJ ns ns ns ns µJ µJ µJ Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 7A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP Qg(ON) IC = 250µA, VCE = 600V VGE = ±20V TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH, VCE = 600V IC = 7A, VCE = 300V IC = 7A, VCE = 300V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-On Energy Turn-Off Energy (Note 2) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IGBT and Diode at TJ = 25oC, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω, L = 1mH, Test Circuit (Figure 24) ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Electrical Specifications PARAMETER Diode Forward Voltage Diode Reverse Recovery Time TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL VEC trr IEC = 7A IEC = 7A, dIEC/dt = 200A/µs IEC = 1A, dIEC/dt = 200A/µs Thermal Resistance Junction To Case RθJC IGBT Diode NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS MIN TYP 2.4 34 22 MAX 1.0 2.2 UNITS V ns ns oC/W oC/W Typical Performance Curves 35 ICE , DC COLLECTOR CURRENT (A) 30 25 20 15 10 5 0 25 50 75 100 Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 40 VGE = 15V TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH 30 20 10 125 150 0 0 100 200 300 400 500 600 700 TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) TC VGE VCE = 390V, RG = 25Ω, TJ = 125oC 75oC 15V 14 12 10 8 6 4 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) tSC ISC 120 100 80 60 40 20 200 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 1.0oC/W, SEE NOTES TJ = 125oC, RG = 25Ω, L = 1mH, V CE = 390V 30 1 5 10 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 ISC, PEAK SHORT CIRCUIT CURRENT (A) 500 16 140 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 30 25 TJ = 125oC 20 15 10 TJ = 25oC 5 0 TJ = 150oC 0 0.5 2.5 1.0 1.5 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.0 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 30 25 20 15 10 5 TJ = 150oC 0 0 0.5 1.0 1.5 2.0 2.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.0 TJ = 25oC DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs TJ = 125oC FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 500 EON2 , TURN-ON ENERGY LOSS (µJ) EOFF, TURN-OFF ENERGY LOSS (µJ) RG = 25Ω, L = 1mH, VCE = 390V 350 300 250 200 RG = 25Ω, L = 1mH, VCE = 390V 400 TJ = 125oC, VGE = 12V, VGE = 15V 300 TJ = 125oC, VGE = 12V OR 15V 150 100 50 0 200 100 TJ = 25oC, VGE = 12V, VGE = 15V 0 0 4 6 8 10 12 ICE , COLLECTOR TO EMITTER CURRENT (A) 2 14 TJ = 25oC, VGE = 12V OR 15V 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 16 td(ON)I, TURN-ON DELAY TIME (ns) RG = 25Ω, L = 1mH, VCE = 390V TJ = 25oC, VGE = 12V trI , RISE TIME (ns) 40 RG = 25Ω, L = 1mH, VCE = 390V TJ = 25oC, VGE = 12V, VGE = 15V 14 TJ = 125oC, VGE = 12V 30 12 TJ = 25oC, VGE = 15V 20 10 TJ = 125oC, VGE = 15V 10 TJ = 125oC, VGE = 12V, VGE = 15V 8 0 2 4 6 8 10 12 ICE , COLLECTOR TO EMITTER CURRENT (A) 14 0 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Typical Performance Curves 180 td(OFF)I , TURN-OFF DELAY TIME (ns) 160 140 120 VGE = 12V, TJ = 125oC 100 80 VGE = 12V, TJ = 25oC 60 20 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V, TJ = 25oC VGE = 15V, TJ = 125oC tfI , FALL TIME (ns) Unless Otherwise Specified (Continued) 90 80 70 TJ = 125oC, VGE = 12V OR 15V 60 50 40 30 TJ = 25oC, VGE = 12V OR 15V RG = 25Ω, L = 1mH, VCE = 390V RG = 25Ω, L = 1mH, VCE = 390V FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 120 100 80 60 40 20 0 TJ = 125oC TJ = -55oC VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs TJ = 25oC 15 IG(REF) = 1mA, RL = 43Ω, TJ = 25oC VCE = 600V VCE = 400V 12 9 VCE = 200V 6 3 7 8 9 10 11 12 13 14 15 0 0 5 10 15 20 25 30 35 40 VGE, GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ) 800 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10 TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 600 ICE = 14A 400 ICE = 7A 200 ICE = 3.5A 1 ICE = 14A ICE = 7A ICE = 3.5A 0.1 10 100 RG, GATE RESISTANCE (Ω) 1000 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Typical Performance Curves 1.4 FREQUENCY = 1MHz 1.2 C, CAPACITANCE (nF) 1.0 0.8 0.6 0.4 0.2 CRES 0 0 20 40 60 80 100 COES CIES Unless Otherwise Specified (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.8 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs 2.6 2.4 ICE = 14A 2.2 ICE = 7A ICE = 3.5A 1.8 9 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 35 30 25 20 15 10 5 0 0 1 2 3 VEC , FORWARD VOLTAGE (V) 4 5 DUTY CYCLE < 0.5%, PULSE DURATION = 250µs trr , RECOVERY TIMES (ns) 100 dIEC/dt = 200A/µs 125oC trr IEC , FORWARD CURRENT (A) 80 60 125oC 25oC 125oC tb 125oC ta 25oC trr 40 20 25oC ta 25oC tb 0 0 2 4 6 8 10 12 14 IEC , FORWARD CURRENT (A) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT IEC = 7A, VCE = 390V 125oC tb Qrr, REVERSE RECOVERY CHARGE (nc) 60 500 VCE = 390V 125oC, IEC = 7A trr, RECOVERY TIMES (ns) 50 400 40 300 125oC, IEC = 3.5A 30 125oC ta 25oC ta 200 25oC, IEC = 7A 20 25oC tb 10 100 200 300 400 500 600 700 100 25oC, IEC = 3.5A 0 100 200 300 400 500 600 700 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Typical Performance Curves Unless Otherwise Specified (Continued) ZθJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X Zθ JC X Rθ JC) + TC 100 101 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG7N60A4D 90% VGE L = 1mH VCE RG = 25Ω DUT + ICE VDD = 390V 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 - FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™  Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15