KSC5027F

KSC5027F KSC5027F High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 3 10 1.5 40 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO VCEX (sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.2A VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω 60 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA hFE Classification Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5027F Typical Characteristics 4.0 3.6 1000 VCE = 5V IC[A], COLLECTOR CURRENT 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 1 2 3 4 5 6 7 hFE, DC CURRENT GAIN 100 IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 80mA IB = 60mA IB = 50mA IB = 40mA IB = 30mA IB = 20mA IB = 10mA IB = 0 8 9 10 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 4.0 IC = 5 IB 3.5 VCE = 5V IC[A], COLLECTOR CURRENT 1 10 3.0 1 VBE(sat) 2.5 2.0 0.1 VCE(sat) 1.5 1.0 0.5 0.01 0.01 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 100 tSTG VCC = 400V 5.IB1 = -2.5.IB2 = IC IC[A], COLLECTOR CURRENT 10 ICMAX.(Pulse) ICMAX(Continuous) s m 10 0µ 10 tON, tSTG, tF [µs], TIME s 1m 1 s tON tF 1 DC 0.1 0.1 0.01 0.01 0.1 1E-3 1 10 1 10 100 1000 10000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5027F Typical Characteristics (Continued) 100 70 IB2 = -0.3A 60 IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION 50 40 1 30 20 0.1 10 0.01 10 100 1000 10000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5027F Package Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1